P2114L
vs
CDM5114CD3
feature comparison
| Rohs Code |
No
|
No
|
| Part Life Cycle Code |
Active
|
Obsolete
|
| Ihs Manufacturer |
ROCHESTER ELECTRONICS LLC
|
HARRIS SEMICONDUCTOR
|
| Reach Compliance Code |
unknown
|
unknown
|
| ECCN Code |
EAR99
|
3A001.A.2.C
|
| HTS Code |
8542.32.00.41
|
8542.32.00.41
|
| Memory IC Type |
STANDARD SRAM
|
STANDARD SRAM
|
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED
|
|
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED
|
|
| Base Number Matches |
1
|
1
|
| Package Description |
|
DIP-18
|
| Access Time-Max |
|
250 ns
|
| I/O Type |
|
COMMON
|
| JESD-30 Code |
|
R-XDIP-T18
|
| JESD-609 Code |
|
e0
|
| Memory Density |
|
4096 bit
|
| Memory Width |
|
4
|
| Number of Terminals |
|
18
|
| Number of Words |
|
1024 words
|
| Number of Words Code |
|
1000
|
| Operating Mode |
|
ASYNCHRONOUS
|
| Operating Temperature-Max |
|
125 °C
|
| Operating Temperature-Min |
|
-55 °C
|
| Organization |
|
1KX4
|
| Output Characteristics |
|
3-STATE
|
| Package Body Material |
|
CERAMIC
|
| Package Code |
|
DIP
|
| Package Equivalence Code |
|
DIP18,.3
|
| Package Shape |
|
RECTANGULAR
|
| Package Style |
|
IN-LINE
|
| Parallel/Serial |
|
PARALLEL
|
| Qualification Status |
|
Not Qualified
|
| Screening Level |
|
MIL-STD-883 Class B (Modified)
|
| Standby Current-Max |
|
0.0005 A
|
| Standby Voltage-Min |
|
2 V
|
| Supply Voltage-Nom (Vsup) |
|
5 V
|
| Surface Mount |
|
NO
|
| Technology |
|
CMOS
|
| Temperature Grade |
|
MILITARY
|
| Terminal Finish |
|
Tin/Lead (Sn/Pb)
|
| Terminal Form |
|
THROUGH-HOLE
|
| Terminal Pitch |
|
2.54 mm
|
| Terminal Position |
|
DUAL
|
|
|
|
Compare P2114L with alternatives
Compare CDM5114CD3 with alternatives