P4KE120C vs P4KE120C feature comparison

P4KE120C International Semiconductor Inc

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P4KE120C Lite-On Semiconductor Corporation

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Part Life Cycle Code Obsolete Obsolete
Ihs Manufacturer INTERNATIONAL SEMICONDUCTOR INC LITE-ON SEMICONDUCTOR CORP
Reach Compliance Code unknown unknown
ECCN Code EAR99 EAR99
HTS Code 8541.10.00.50 8541.10.00.50
Additional Feature LOW IMPEDANCE EXCELLENT CLAMPING CAPABILITY
Breakdown Voltage-Max 132 V 132 V
Breakdown Voltage-Min 108 V 108 V
Case Connection ISOLATED ISOLATED
Clamping Voltage-Max 173 V 173 V
Configuration SINGLE SINGLE
Diode Element Material SILICON SILICON
Diode Type TRANS VOLTAGE SUPPRESSOR DIODE TRANS VOLTAGE SUPPRESSOR DIODE
JESD-30 Code O-PALF-W2 O-PALF-W2
Non-rep Peak Rev Power Dis-Max 400 W 400 W
Number of Elements 1 1
Number of Terminals 2 2
Operating Temperature-Max 150 °C 150 °C
Operating Temperature-Min -65 °C -55 °C
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape ROUND ROUND
Package Style LONG FORM LONG FORM
Polarity BIDIRECTIONAL BIDIRECTIONAL
Power Dissipation-Max 1 W 1 W
Qualification Status Not Qualified Not Qualified
Reverse Current-Max 5 µA
Surface Mount NO NO
Technology AVALANCHE AVALANCHE
Terminal Form WIRE WIRE
Terminal Position AXIAL AXIAL
Base Number Matches 2 2
Pbfree Code Yes
Rohs Code Yes
Part Package Code DO-41
Package Description PLASTIC PACKAGE-2
Pin Count 2
Breakdown Voltage-Nom 120 V
JEDEC-95 Code DO-41
Peak Reflow Temperature (Cel) 255
Rep Pk Reverse Voltage-Max 97.2 V
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED

Compare P4KE120C with alternatives

Compare P4KE120C with alternatives