P4KE36C vs BZW04P31B feature comparison

P4KE36C International Semiconductor Inc

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BZW04P31B STMicroelectronics

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Part Life Cycle Code Obsolete Obsolete
Ihs Manufacturer INTERNATIONAL SEMICONDUCTOR INC STMICROELECTRONICS
Reach Compliance Code unknown compliant
ECCN Code EAR99 EAR99
HTS Code 8541.10.00.50 8541.10.00.50
Additional Feature LOW IMPEDANCE
Breakdown Voltage-Max 39.6 V 39.6 V
Breakdown Voltage-Min 32.4 V 34.2 V
Case Connection ISOLATED ISOLATED
Clamping Voltage-Max 52 V 64.3 V
Configuration SINGLE SINGLE
Diode Element Material SILICON SILICON
Diode Type TRANS VOLTAGE SUPPRESSOR DIODE TRANS VOLTAGE SUPPRESSOR DIODE
JESD-30 Code O-PALF-W2 O-PALF-W2
Non-rep Peak Rev Power Dis-Max 400 W 400 W
Number of Elements 1 1
Number of Terminals 2 2
Operating Temperature-Max 150 °C 175 °C
Operating Temperature-Min -65 °C
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape ROUND ROUND
Package Style LONG FORM LONG FORM
Polarity BIDIRECTIONAL BIDIRECTIONAL
Power Dissipation-Max 1 W 1.7 W
Qualification Status Not Qualified Not Qualified
Reverse Current-Max 5 µA 5 µA
Surface Mount NO NO
Technology AVALANCHE AVALANCHE
Terminal Form WIRE WIRE
Terminal Position AXIAL AXIAL
Base Number Matches 2 2
Rohs Code No
Breakdown Voltage-Nom 36 V
Diode Capacitance-Min 240 pF
Reference Standard UL RECOGNIZED
Rep Pk Reverse Voltage-Max 31 V

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