P6KE200A-GT3 vs P6KE200ACOX.200 feature comparison

P6KE200A-GT3 Sangdest Microelectronics (Nanjing) Co Ltd

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P6KE200ACOX.200 Microsemi Corporation

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Rohs Code Yes
Part Life Cycle Code Obsolete Transferred
Ihs Manufacturer SANGDEST MICROELECTRONICS (NANJING) CO LTD NEW ENGLAND SEMICONDUCTOR
Package Description O-PALF-W2
Reach Compliance Code unknown unknown
Breakdown Voltage-Max 210 V
Breakdown Voltage-Min 190 V
Case Connection ISOLATED
Configuration SINGLE SINGLE
Diode Element Material SILICON SILICON
Diode Type TRANS VOLTAGE SUPPRESSOR DIODE TRANS VOLTAGE SUPPRESSOR DIODE
JEDEC-95 Code DO-15
JESD-30 Code O-PALF-W2 O-MEDB-N2
Moisture Sensitivity Level 1
Non-rep Peak Rev Power Dis-Max 600 W 600 W
Number of Elements 1 1
Number of Terminals 2 2
Package Body Material PLASTIC/EPOXY METAL
Package Shape ROUND ROUND
Package Style LONG FORM DISK BUTTON
Polarity UNIDIRECTIONAL UNIDIRECTIONAL
Power Dissipation-Max 5 W
Qualification Status Not Qualified Not Qualified
Reference Standard UL RECOGNIZED
Rep Pk Reverse Voltage-Max 171 V 171 V
Surface Mount NO YES
Technology AVALANCHE AVALANCHE
Terminal Form WIRE NO LEAD
Terminal Position AXIAL END
Base Number Matches 2 1
ECCN Code EAR99
HTS Code 8541.10.00.50
Breakdown Voltage-Nom 200 V
Clamping Voltage-Max 274 V
Operating Temperature-Max 175 °C
Operating Temperature-Min -65 °C
Reverse Current-Max 5 µA

Compare P6KE200A-GT3 with alternatives

Compare P6KE200ACOX.200 with alternatives