P6SMB11ATR13 vs MVP5KE5.0AE3TR feature comparison

P6SMB11ATR13 Central Semiconductor Corp

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MVP5KE5.0AE3TR Microsemi Corporation

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Pbfree Code No
Rohs Code No Yes
Part Life Cycle Code Active Obsolete
Ihs Manufacturer CENTRAL SEMICONDUCTOR CORP MICROSEMI CORP
Reach Compliance Code not_compliant unknown
ECCN Code EAR99 EAR99
HTS Code 8541.10.00.50 8541.10.00.50
Breakdown Voltage-Max 11.6 V 7 V
Breakdown Voltage-Min 10.5 V 6.4 V
Breakdown Voltage-Nom 11 V
Clamping Voltage-Max 15.6 V
Configuration SINGLE SINGLE
Diode Element Material SILICON SILICON
Diode Type TRANS VOLTAGE SUPPRESSOR DIODE TRANS VOLTAGE SUPPRESSOR DIODE
JESD-30 Code R-PDSO-C2 O-PALF-W2
JESD-609 Code e0 e3
Non-rep Peak Rev Power Dis-Max 600 W 500 W
Number of Elements 1 1
Number of Terminals 2 2
Operating Temperature-Max 150 °C 150 °C
Operating Temperature-Min -65 °C -65 °C
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR ROUND
Package Style SMALL OUTLINE LONG FORM
Polarity UNIDIRECTIONAL UNIDIRECTIONAL
Qualification Status Not Qualified Not Qualified
Rep Pk Reverse Voltage-Max 9.4 V 5 V
Surface Mount YES NO
Technology AVALANCHE AVALANCHE
Terminal Finish TIN LEAD MATTE TIN
Terminal Form C BEND WIRE
Terminal Position DUAL AXIAL
Base Number Matches 2 1
Part Package Code DO-41
Package Description O-PALF-W2
Pin Count 2
Case Connection ISOLATED
JEDEC-95 Code DO-204AL
Moisture Sensitivity Level 1
Power Dissipation-Max 1.19 W
Reference Standard MIL-19500

Compare P6SMB11ATR13 with alternatives

Compare MVP5KE5.0AE3TR with alternatives