P6SMBJ30T3 vs P6SMB30AHE3/5B feature comparison

P6SMBJ30T3 Littelfuse Inc

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P6SMB30AHE3/5B Vishay Semiconductors

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Rohs Code Yes Yes
Part Life Cycle Code Obsolete Obsolete
Ihs Manufacturer LITTELFUSE INC VISHAY SEMICONDUCTORS
Package Description R-PDSO-C2 R-PDSO-C2
Reach Compliance Code not_compliant unknown
ECCN Code EAR99 EAR99
HTS Code 8541.10.00.50 8541.10.00.50
Additional Feature LOW INDUCTANCE EXCELLENT CLAMPING CAPABILITY, HIGH RELIABILITY
Breakdown Voltage-Max 33 V 31.5 V
Breakdown Voltage-Min 27 V 28.5 V
Configuration SINGLE SINGLE
Diode Element Material SILICON SILICON
Diode Type TRANS VOLTAGE SUPPRESSOR DIODE TRANS VOLTAGE SUPPRESSOR DIODE
JEDEC-95 Code DO-214AA DO-214AA
JESD-30 Code R-PDSO-C2 R-PDSO-C2
JESD-609 Code e3 e3
Moisture Sensitivity Level 2 1
Non-rep Peak Rev Power Dis-Max 600 W 600 W
Number of Elements 1 1
Number of Terminals 2 2
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE SMALL OUTLINE
Peak Reflow Temperature (Cel) 260 260
Polarity UNIDIRECTIONAL UNIDIRECTIONAL
Qualification Status Not Qualified Not Qualified
Reference Standard UL RECOGNIZED
Surface Mount YES YES
Technology AVALANCHE AVALANCHE
Terminal Finish Matte Tin (Sn) MATTE TIN
Terminal Form C BEND C BEND
Terminal Position DUAL DUAL
Time@Peak Reflow Temperature-Max (s) 30 30
Base Number Matches 1 1
Pbfree Code Yes
Part Package Code DO-214AA
Pin Count 2
Samacsys Manufacturer Vishay
Breakdown Voltage-Nom 30 V
Case Connection ISOLATED
Clamping Voltage-Max 41.4 V
Operating Temperature-Max 150 °C
Operating Temperature-Min -65 °C
Power Dissipation-Max 5 W
Rep Pk Reverse Voltage-Max 25.6 V

Compare P6SMBJ30T3 with alternatives

Compare P6SMB30AHE3/5B with alternatives