PESD3V3L1BA,115
vs
PESD3V3L1BAZ
feature comparison
| Rohs Code |
Yes
|
|
| Part Life Cycle Code |
Transferred
|
Active
|
| Ihs Manufacturer |
NXP SEMICONDUCTORS
|
NEXPERIA
|
| Part Package Code |
SOD
|
SOD
|
| Package Description |
SC-76, SOD-323, 2 PIN
|
R-PDSO-G2
|
| Pin Count |
2
|
2
|
| Manufacturer Package Code |
SOD323
|
SOD323
|
| Reach Compliance Code |
compliant
|
compliant
|
| ECCN Code |
EAR99
|
|
| HTS Code |
8541.10.00.50
|
|
| Additional Feature |
LOW CAPACITANCE
|
LOW CAPACITANCE
|
| Breakdown Voltage-Max |
6.9 V
|
6.9 V
|
| Breakdown Voltage-Min |
5.8 V
|
5.8 V
|
| Breakdown Voltage-Nom |
6.4 V
|
6.4 V
|
| Clamping Voltage-Max |
26 V
|
26 V
|
| Configuration |
SINGLE
|
SINGLE
|
| Diode Element Material |
SILICON
|
SILICON
|
| Diode Type |
TRANS VOLTAGE SUPPRESSOR DIODE
|
TRANS VOLTAGE SUPPRESSOR DIODE
|
| JESD-30 Code |
R-PDSO-G2
|
R-PDSO-G2
|
| JESD-609 Code |
e3
|
e3
|
| Moisture Sensitivity Level |
1
|
1
|
| Non-rep Peak Rev Power Dis-Max |
500 W
|
500 W
|
| Number of Elements |
1
|
1
|
| Number of Terminals |
2
|
2
|
| Operating Temperature-Max |
150 °C
|
150 °C
|
| Operating Temperature-Min |
-65 °C
|
-65 °C
|
| Package Body Material |
PLASTIC/EPOXY
|
PLASTIC/EPOXY
|
| Package Shape |
RECTANGULAR
|
RECTANGULAR
|
| Package Style |
SMALL OUTLINE
|
SMALL OUTLINE
|
| Peak Reflow Temperature (Cel) |
260
|
260
|
| Polarity |
BIDIRECTIONAL
|
BIDIRECTIONAL
|
| Qualification Status |
Not Qualified
|
|
| Rep Pk Reverse Voltage-Max |
3.3 V
|
3.3 V
|
| Reverse Current-Max |
2 µA
|
2 µA
|
| Reverse Test Voltage |
3.3 V
|
3.3 V
|
| Surface Mount |
YES
|
YES
|
| Technology |
AVALANCHE
|
AVALANCHE
|
| Terminal Finish |
TIN
|
TIN
|
| Terminal Form |
GULL WING
|
GULL WING
|
| Terminal Position |
DUAL
|
DUAL
|
| Time@Peak Reflow Temperature-Max (s) |
30
|
30
|
| Base Number Matches |
2
|
1
|
| Samacsys Manufacturer |
|
Nexperia
|
| Reference Standard |
|
AEC-Q101; IEC-60134; IEC-61000-4-2, 4-5
|
|
|
|
Compare PESD3V3L1BA,115 with alternatives
Compare PESD3V3L1BAZ with alternatives