PESD5V0S1BL315
vs
PESD5V0S1BL
feature comparison
| Rohs Code |
Yes
|
Yes
|
| Part Life Cycle Code |
Transferred
|
Transferred
|
| Ihs Manufacturer |
NXP SEMICONDUCTORS
|
NXP SEMICONDUCTORS
|
| Part Package Code |
DFN
|
DFN
|
| Package Description |
1 X 0.60 MM, 0.50 MM HEIGHT, ULTRA SMALL, LEADLESS, PLASTIC PACKAGE-2
|
1 X 0.60 MM, 0.50 MM HEIGHT, ULTRA SMALL, LEADLESS, PLASTIC PACKAGE-2
|
| Pin Count |
2
|
2
|
| Manufacturer Package Code |
SOD882
|
|
| Reach Compliance Code |
compliant
|
compliant
|
| ECCN Code |
EAR99
|
EAR99
|
| HTS Code |
8541.10.00.50
|
8541.10.00.50
|
| Additional Feature |
LOW CAPACITANCE
|
LOW CAPACITANCE
|
| Breakdown Voltage-Max |
9.5 V
|
9.5 V
|
| Breakdown Voltage-Min |
5.5 V
|
5.5 V
|
| Breakdown Voltage-Nom |
7.5 V
|
7.5 V
|
| Clamping Voltage-Max |
14 V
|
14 V
|
| Configuration |
SINGLE
|
SINGLE
|
| Diode Element Material |
SILICON
|
SILICON
|
| Diode Type |
TRANS VOLTAGE SUPPRESSOR DIODE
|
TRANS VOLTAGE SUPPRESSOR DIODE
|
| JESD-30 Code |
R-PBCC-N2
|
R-PBCC-N2
|
| JESD-609 Code |
e3
|
e3
|
| Moisture Sensitivity Level |
1
|
1
|
| Non-rep Peak Rev Power Dis-Max |
130 W
|
130 W
|
| Number of Elements |
1
|
1
|
| Number of Terminals |
2
|
2
|
| Operating Temperature-Max |
150 °C
|
150 °C
|
| Package Body Material |
PLASTIC/EPOXY
|
PLASTIC/EPOXY
|
| Package Shape |
RECTANGULAR
|
RECTANGULAR
|
| Package Style |
CHIP CARRIER
|
CHIP CARRIER
|
| Peak Reflow Temperature (Cel) |
260
|
260
|
| Polarity |
BIDIRECTIONAL
|
BIDIRECTIONAL
|
| Qualification Status |
Not Qualified
|
Not Qualified
|
| Rep Pk Reverse Voltage-Max |
5 V
|
5 V
|
| Surface Mount |
YES
|
YES
|
| Technology |
AVALANCHE
|
AVALANCHE
|
| Terminal Finish |
TIN
|
Tin (Sn)
|
| Terminal Form |
NO LEAD
|
NO LEAD
|
| Terminal Position |
BOTTOM
|
BOTTOM
|
| Time@Peak Reflow Temperature-Max (s) |
30
|
30
|
| Base Number Matches |
1
|
4
|
| Pbfree Code |
|
Yes
|
| Samacsys Manufacturer |
|
NXP
|
|
|
|
Compare PESD5V0S1BL315 with alternatives
Compare PESD5V0S1BL with alternatives