PTVS58VP1UP vs PTVS33VP1UP feature comparison

PTVS58VP1UP Nexperia

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PTVS33VP1UP NXP Semiconductors

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Rohs Code Yes Yes
Part Life Cycle Code Active Transferred
Ihs Manufacturer NEXPERIA NXP SEMICONDUCTORS
Package Description R-PDSO-F2 R-PDSO-F2
Reach Compliance Code not_compliant unknown
ECCN Code EAR99 EAR99
HTS Code 8541.10.00.50 8541.10.00.50
Date Of Intro 2017-02-01
Samacsys Manufacturer Nexperia
Breakdown Voltage-Max 71.2 V 40.6 V
Breakdown Voltage-Min 64.4 V 36.7 V
Configuration SINGLE SINGLE
Diode Element Material SILICON SILICON
Diode Type TRANS VOLTAGE SUPPRESSOR DIODE TRANS VOLTAGE SUPPRESSOR DIODE
JESD-30 Code R-PDSO-F2 R-PDSO-F2
JESD-609 Code e3 e3
Moisture Sensitivity Level 1 1
Non-rep Peak Rev Power Dis-Max 600 W 600 W
Number of Elements 1 1
Number of Terminals 2 2
Operating Temperature-Max 150 °C 150 °C
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE SMALL OUTLINE
Peak Reflow Temperature (Cel) 260 NOT SPECIFIED
Polarity UNIDIRECTIONAL UNIDIRECTIONAL
Reference Standard AEC-Q101; IEC-60134; IEC-61000-4-2; IEC-61643-321 AEC-Q101; IEC-60134; IEC-61000-4-2; IEC-61643-321
Rep Pk Reverse Voltage-Max 58 V 33 V
Surface Mount YES YES
Technology AVALANCHE AVALANCHE
Terminal Finish TIN Tin (Sn)
Terminal Form FLAT FLAT
Terminal Position DUAL DUAL
Time@Peak Reflow Temperature-Max (s) 30 NOT SPECIFIED
Base Number Matches 2 3
Pin Count 2
Qualification Status Not Qualified

Compare PTVS58VP1UP with alternatives

Compare PTVS33VP1UP with alternatives