RBVQ1000N7
vs
VQ1000P
feature comparison
| Part Life Cycle Code |
Obsolete
|
Obsolete
|
| Ihs Manufacturer |
SUPERTEX INC
|
VISHAY SILICONIX
|
| Part Package Code |
DIP
|
DIP
|
| Package Description |
IN-LINE, R-CDIP-T14
|
IN-LINE, R-CDIP-T14
|
| Pin Count |
14
|
14
|
| Reach Compliance Code |
unknown
|
unknown
|
| ECCN Code |
EAR99
|
EAR99
|
| Configuration |
SEPARATE, 4 ELEMENTS WITH BUILT-IN DIODE
|
SEPARATE, 4 ELEMENTS WITH BUILT-IN DIODE
|
| DS Breakdown Voltage-Min |
60 V
|
60 V
|
| Drain Current-Max (ID) |
0.225 A
|
0.225 A
|
| Drain-source On Resistance-Max |
5.5 Ω
|
5.5 Ω
|
| FET Technology |
METAL-OXIDE SEMICONDUCTOR
|
METAL-OXIDE SEMICONDUCTOR
|
| Feedback Cap-Max (Crss) |
5 pF
|
5 pF
|
| JESD-30 Code |
R-CDIP-T14
|
R-CDIP-T14
|
| Number of Elements |
4
|
4
|
| Number of Terminals |
14
|
14
|
| Operating Mode |
ENHANCEMENT MODE
|
ENHANCEMENT MODE
|
| Operating Temperature-Max |
150 °C
|
150 °C
|
| Package Body Material |
CERAMIC, METAL-SEALED COFIRED
|
CERAMIC, METAL-SEALED COFIRED
|
| Package Shape |
RECTANGULAR
|
RECTANGULAR
|
| Package Style |
IN-LINE
|
IN-LINE
|
| Polarity/Channel Type |
N-CHANNEL
|
N-CHANNEL
|
| Pulsed Drain Current-Max (IDM) |
1 A
|
1 A
|
| Qualification Status |
Not Qualified
|
Not Qualified
|
| Surface Mount |
NO
|
NO
|
| Terminal Form |
THROUGH-HOLE
|
THROUGH-HOLE
|
| Terminal Position |
DUAL
|
DUAL
|
| Transistor Application |
SWITCHING
|
SWITCHING
|
| Transistor Element Material |
SILICON
|
SILICON
|
| Turn-off Time-Max (toff) |
10 ns
|
10 ns
|
| Turn-on Time-Max (ton) |
10 ns
|
10 ns
|
| Base Number Matches |
1
|
2
|
| Samacsys Manufacturer |
|
Vishay
|
| Additional Feature |
|
LOGIC LEVEL COMPATIBLE
|
| Operating Temperature-Min |
|
-55 °C
|
|
|
|
Compare RBVQ1000N7 with alternatives
Compare VQ1000P with alternatives