S29GL512S11FHI020
vs
S29GL512S11DHIV10
feature comparison
| Rohs Code |
Yes
|
Yes
|
| Part Life Cycle Code |
Active
|
Active
|
| Ihs Manufacturer |
INFINEON TECHNOLOGIES AG
|
INFINEON TECHNOLOGIES AG
|
| Package Description |
FBGA-64
|
|
| Reach Compliance Code |
compliant
|
compliant
|
| ECCN Code |
3A991.B.1.B.1
|
|
| HTS Code |
8542.32.00.51
|
|
| Factory Lead Time |
2 Days
|
8 Weeks
|
| Samacsys Manufacturer |
Infineon
|
Infineon
|
| Access Time-Max |
110 ns
|
110 ns
|
| Command User Interface |
YES
|
YES
|
| Common Flash Interface |
YES
|
YES
|
| Data Polling |
YES
|
YES
|
| JESD-30 Code |
R-PBGA-B64
|
S-PBGA-B64
|
| JESD-609 Code |
e1
|
e1
|
| Length |
13 mm
|
9 mm
|
| Memory Density |
536870912 bit
|
536870912 bit
|
| Memory IC Type |
EEPROM CARD
|
FLASH
|
| Memory Width |
16
|
8
|
| Moisture Sensitivity Level |
3
|
3
|
| Number of Functions |
1
|
1
|
| Number of Sectors/Size |
512
|
512
|
| Number of Terminals |
64
|
64
|
| Number of Words |
33554432 words
|
67108864 words
|
| Number of Words Code |
32000000
|
64000000
|
| Operating Mode |
ASYNCHRONOUS
|
ASYNCHRONOUS
|
| Operating Temperature-Max |
85 °C
|
85 °C
|
| Operating Temperature-Min |
-40 °C
|
-40 °C
|
| Organization |
32MX16
|
64MX8
|
| Package Body Material |
PLASTIC/EPOXY
|
PLASTIC/EPOXY
|
| Package Code |
LBGA
|
LBGA
|
| Package Equivalence Code |
BGA64,8X8,40
|
BGA64,8X8,40
|
| Package Shape |
RECTANGULAR
|
SQUARE
|
| Package Style |
GRID ARRAY, LOW PROFILE
|
GRID ARRAY, LOW PROFILE
|
| Page Size |
16 words
|
32 words
|
| Parallel/Serial |
PARALLEL
|
PARALLEL
|
| Peak Reflow Temperature (Cel) |
260
|
260
|
| Programming Voltage |
2.7 V
|
3 V
|
| Qualification Status |
Not Qualified
|
|
| Ready/Busy |
YES
|
YES
|
| Seated Height-Max |
1.4 mm
|
1.4 mm
|
| Sector Size |
64K
|
128K
|
| Standby Current-Max |
0.0001 A
|
0.0001 A
|
| Supply Current-Max |
0.08 mA
|
0.1 mA
|
| Supply Voltage-Max (Vsup) |
3.6 V
|
3.6 V
|
| Supply Voltage-Min (Vsup) |
2.7 V
|
2.7 V
|
| Supply Voltage-Nom (Vsup) |
3 V
|
3 V
|
| Surface Mount |
YES
|
YES
|
| Technology |
CMOS
|
CMOS
|
| Temperature Grade |
INDUSTRIAL
|
|
| Terminal Finish |
Tin/Silver/Copper (Sn96.5Ag3.0Cu0.5)
|
Tin/Silver/Copper (Sn/Ag/Cu)
|
| Terminal Form |
BALL
|
BALL
|
| Terminal Pitch |
1 mm
|
1 mm
|
| Terminal Position |
BOTTOM
|
BOTTOM
|
| Time@Peak Reflow Temperature-Max (s) |
30
|
30
|
| Toggle Bit |
YES
|
YES
|
| Type |
NOR TYPE
|
NAND TYPE
|
| Width |
11 mm
|
9 mm
|
| Base Number Matches |
1
|
1
|
| Additional Feature |
|
20 YEARS DATA RETENTION; 10000 ERASE/PROGRAM CYCLES
|
| Alternate Memory Width |
|
1
|
| Boot Block |
|
BOTTOM/TOP
|
| Data Retention Time-Min |
|
2
|
| Endurance |
|
100000 Write/Erase Cycles
|
| Output Characteristics |
|
3-STATE
|
|
|
|
Compare S29GL512S11FHI020 with alternatives
Compare S29GL512S11DHIV10 with alternatives