SMBJ33AM4G vs SMBJ33-T feature comparison

SMBJ33AM4G Taiwan Semiconductor

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SMBJ33-T Micro Commercial Components

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Rohs Code Yes No
Part Life Cycle Code Obsolete Obsolete
Package Description Smb, 2 Pin
Reach Compliance Code Not Compliant Unknown
ECCN Code EAR99 EAR99
HTS Code 8541.10.00.50 8541.10.00.50
Additional Feature Excellent Clamping Capability
Breakdown Voltage-Max 40.6 V 44.9 V
Breakdown Voltage-Min 36.7 V 36.7 V
Breakdown Voltage-Nom 38.65 V 40.8 V
Clamping Voltage-Max 53.3 V 59 V
Configuration Single Single
Diode Element Material Silicon
Diode Type Trans Voltage Suppressor Diode Trans Voltage Suppressor Diode
JEDEC-95 Code DO-214AA DO-214AA
JESD-30 Code R-PDSO-C2 R-PDSO-C2
JESD-609 Code e3 e0
Moisture Sensitivity Level 1 1
Non-rep Peak Rev Power Dis-Max 600 W 600 W
Number of Elements 1 1
Number of Terminals 2 2
Operating Temperature-Max 150 °C
Operating Temperature-Min -55 °C
Package Body Material Plastic/Epoxy Plastic/Epoxy
Package Shape Rectangular Rectangular
Package Style Small Outline Small Outline
Peak Reflow Temperature (Cel) 260 240
Polarity Unidirectional Unidirectional
Power Dissipation-Max 3 W
Rep Pk Reverse Voltage-Max 33 V 33 V
Surface Mount Yes Yes
Technology Avalanche Avalanche
Terminal Finish Matte Tin Tin Lead
Terminal Form C Bend C Bend
Terminal Position Dual Dual
Time@Peak Reflow Temperature-Max (s) 30 30
Base Number Matches 1 2