SMBJ45AR4G vs SMBJ45A-Q feature comparison

SMBJ45AR4G Taiwan Semiconductor

Buy Now Datasheet

SMBJ45A-Q Bourns Inc

Buy Now Datasheet
Rohs Code Yes Yes
Part Life Cycle Code Obsolete Active
Ihs Manufacturer TAIWAN SEMICONDUCTOR CO LTD BOURNS INC
Package Description SMB, 2 PIN R-PDSO-C2
Reach Compliance Code not_compliant not_compliant
ECCN Code EAR99 EAR99
HTS Code 8541.10.00.50 8541.10.00.50
Additional Feature EXCELLENT CLAMPING CAPABILITY PRSM-MIN
Breakdown Voltage-Max 55.3 V 55.3 V
Breakdown Voltage-Min 50 V 50 V
Configuration SINGLE SINGLE
Diode Element Material SILICON SILICON
Diode Type TRANS VOLTAGE SUPPRESSOR DIODE TRANS VOLTAGE SUPPRESSOR DIODE
JEDEC-95 Code DO-214AA DO-214AA
JESD-30 Code R-PDSO-C2 R-PDSO-C2
JESD-609 Code e3 e3
Moisture Sensitivity Level 1 1
Non-rep Peak Rev Power Dis-Max 600 W 600 W
Number of Elements 1 1
Number of Terminals 2 2
Operating Temperature-Max 150 °C 150 °C
Operating Temperature-Min -55 °C -55 °C
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE SMALL OUTLINE
Peak Reflow Temperature (Cel) 260 260
Polarity UNIDIRECTIONAL UNIDIRECTIONAL
Power Dissipation-Max 3 W
Rep Pk Reverse Voltage-Max 45 V 45 V
Surface Mount YES YES
Technology AVALANCHE AVALANCHE
Terminal Finish MATTE TIN MATTE TIN
Terminal Form C BEND C BEND
Terminal Position DUAL DUAL
Time@Peak Reflow Temperature-Max (s) 30 30
Base Number Matches 1 1
Factory Lead Time 16 Weeks
Samacsys Manufacturer Bourns
Breakdown Voltage-Nom 52.65 V
Clamping Voltage-Max 72.7 V
Reference Standard AEC-Q101; UL RECOGNIZED
Reverse Current-Max 1 µA
Reverse Test Voltage 45 V

Compare SMBJ45AR4G with alternatives

Compare SMBJ45A-Q with alternatives