SMBJP6KE56CAE3TR vs WS48P6SMB-B feature comparison

SMBJP6KE56CAE3TR Microsemi Corporation

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WS48P6SMB-B Cyg Wayon Circuit Protection Co Ltd

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Rohs Code Yes Yes
Part Life Cycle Code Transferred Contact Manufacturer
Ihs Manufacturer MICROSEMI CORP CYG WAYON CIRCUIT PROTECTION CO LTD
Part Package Code DO-214AA
Package Description R-PDSO-C2 R-PDSO-C2
Pin Count 2
Reach Compliance Code compliant unknown
ECCN Code EAR99 EAR99
HTS Code 8541.10.00.50 8541.10.00.50
Additional Feature TR, 7 INCH: 750 EXCELLENT CLAMPING CAPABILITY
Breakdown Voltage-Max 58.8 V 58.9 V
Breakdown Voltage-Min 53.2 V 53.3 V
Configuration SINGLE SINGLE
Diode Element Material SILICON SILICON
Diode Type TRANS VOLTAGE SUPPRESSOR DIODE TRANS VOLTAGE SUPPRESSOR DIODE
JEDEC-95 Code DO-214AA DO-214AA
JESD-30 Code R-PDSO-C2 R-PDSO-C2
Non-rep Peak Rev Power Dis-Max 600 W 600 W
Number of Elements 1 1
Number of Terminals 2 2
Operating Temperature-Max 150 °C 150 °C
Operating Temperature-Min -65 °C -65 °C
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE SMALL OUTLINE
Polarity BIDIRECTIONAL BIDIRECTIONAL
Power Dissipation-Max 1.38 W 5 W
Rep Pk Reverse Voltage-Max 47.8 V 48 V
Surface Mount YES YES
Technology AVALANCHE AVALANCHE
Terminal Form C BEND C BEND
Terminal Position DUAL DUAL
Base Number Matches 1 1
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED

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