UM2102SM
vs
UM2102DE3
feature comparison
| Rohs Code |
No
|
|
| Part Life Cycle Code |
Active
|
Active
|
| Ihs Manufacturer |
MICROCHIP TECHNOLOGY INC
|
MICROCHIP TECHNOLOGY INC
|
| Reach Compliance Code |
compliant
|
compliant
|
| ECCN Code |
EAR99
|
EAR99
|
| HTS Code |
8541.10.00.60
|
8541.10.00.80
|
| Additional Feature |
LOW DISTORTION
|
LOW DISTORTION
|
| Application |
ATTENUATOR; SWITCHING
|
ATTENUATOR; SWITCHING
|
| Breakdown Voltage-Min |
200 V
|
200 V
|
| Case Connection |
ISOLATED
|
ISOLATED
|
| Configuration |
SINGLE
|
SINGLE
|
| Diode Capacitance-Max |
2.5 pF
|
2.5 pF
|
| Diode Capacitance-Nom |
1.9 pF
|
|
| Diode Element Material |
SILICON
|
SILICON
|
| Diode Forward Resistance-Max |
2 Ω
|
2 Ω
|
| Diode Res Test Current |
100 mA
|
|
| Diode Res Test Frequency |
2 MHz
|
|
| Diode Type |
PIN DIODE
|
PIN DIODE
|
| Frequency Band |
MEDIUM FREQUENCY TO HIGH FREQUENCY
|
MEDIUM FREQUENCY TO HIGH FREQUENCY
|
| JESD-30 Code |
O-XELF-R2
|
O-XRPM-F2
|
| JESD-609 Code |
e0
|
|
| Minority Carrier Lifetime-Nom |
25 µs
|
25 µs
|
| Number of Elements |
1
|
1
|
| Number of Terminals |
2
|
2
|
| Operating Temperature-Max |
175 °C
|
|
| Package Body Material |
UNSPECIFIED
|
UNSPECIFIED
|
| Package Shape |
ROUND
|
ROUND
|
| Package Style |
LONG FORM
|
POST/STUD MOUNT
|
| Power Dissipation-Max |
15 W
|
18.75 W
|
| Qualification Status |
Not Qualified
|
|
| Reverse Test Voltage |
100 V
|
|
| Surface Mount |
YES
|
NO
|
| Technology |
POSITIVE-INTRINSIC-NEGATIVE
|
POSITIVE-INTRINSIC-NEGATIVE
|
| Terminal Finish |
TIN LEAD
|
|
| Terminal Form |
WRAP AROUND
|
FLAT
|
| Terminal Position |
END
|
RADIAL
|
| Base Number Matches |
2
|
1
|
|
|
|
Compare UM2102SM with alternatives
Compare UM2102DE3 with alternatives