WED3EG6418SL262D3
vs
MT4VDDT1664AG-335XX
feature comparison
| Part Life Cycle Code |
Obsolete
|
Obsolete
|
| Ihs Manufacturer |
MICROSEMI CORP
|
MICRON TECHNOLOGY INC
|
| Part Package Code |
DIMM
|
DIMM
|
| Package Description |
DIMM,
|
DIMM,
|
| Pin Count |
184
|
184
|
| Reach Compliance Code |
compliant
|
unknown
|
| ECCN Code |
EAR99
|
EAR99
|
| HTS Code |
8542.32.00.32
|
8542.32.00.32
|
| Access Mode |
FOUR BANK PAGE BURST
|
SINGLE BANK PAGE BURST
|
| Additional Feature |
AUTO/SELF REFRESH
|
AUTO/SELF REFRESH
|
| JESD-30 Code |
R-XDMA-N184
|
R-XDMA-N184
|
| Memory Density |
1073741824 bit
|
1073741824 bit
|
| Memory IC Type |
DDR DRAM MODULE
|
DDR DRAM MODULE
|
| Memory Width |
64
|
64
|
| Number of Functions |
1
|
1
|
| Number of Ports |
1
|
1
|
| Number of Terminals |
184
|
184
|
| Number of Words |
16777216 words
|
16777216 words
|
| Number of Words Code |
16000000
|
16000000
|
| Operating Mode |
SYNCHRONOUS
|
SYNCHRONOUS
|
| Operating Temperature-Max |
70 °C
|
70 °C
|
| Operating Temperature-Min |
|
|
| Organization |
16MX64
|
16MX64
|
| Package Body Material |
UNSPECIFIED
|
UNSPECIFIED
|
| Package Code |
DIMM
|
DIMM
|
| Package Shape |
RECTANGULAR
|
RECTANGULAR
|
| Package Style |
MICROELECTRONIC ASSEMBLY
|
MICROELECTRONIC ASSEMBLY
|
| Qualification Status |
Not Qualified
|
Not Qualified
|
| Self Refresh |
YES
|
YES
|
| Supply Voltage-Max (Vsup) |
2.7 V
|
2.7 V
|
| Supply Voltage-Min (Vsup) |
2.3 V
|
2.3 V
|
| Supply Voltage-Nom (Vsup) |
2.5 V
|
2.5 V
|
| Surface Mount |
NO
|
NO
|
| Technology |
CMOS
|
CMOS
|
| Temperature Grade |
COMMERCIAL
|
COMMERCIAL
|
| Terminal Form |
NO LEAD
|
NO LEAD
|
| Terminal Position |
DUAL
|
DUAL
|
| Base Number Matches |
1
|
1
|
| Rohs Code |
|
No
|
| Access Time-Max |
|
0.7 ns
|
| JESD-609 Code |
|
e0
|
| Terminal Finish |
|
TIN LEAD
|
|
|
|
Compare WED3EG6418SL262D3 with alternatives
Compare MT4VDDT1664AG-335XX with alternatives