Part Details for 1N5809E3 by Microsemi Corporation
Overview of 1N5809E3 by Microsemi Corporation
- Distributor Offerings: (0 listings)
- Number of FFF Equivalents: (10 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Part Details for 1N5809E3
1N5809E3 CAD Models
1N5809E3 Part Data Attributes
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1N5809E3
Microsemi Corporation
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Datasheet
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1N5809E3
Microsemi Corporation
Rectifier Diode, Avalanche, 1 Phase, 1 Element, 3A, 100V V(RRM), Silicon, ROHS COMPLIANT, HERMETIC SEALED, GLASS, B PACKAGE-2
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Pbfree Code | Yes | |
Rohs Code | Yes | |
Part Life Cycle Code | Transferred | |
Ihs Manufacturer | MICROSEMI CORP | |
Package Description | ROHS COMPLIANT, HERMETIC SEALED, GLASS, B PACKAGE-2 | |
Reach Compliance Code | compliant | |
ECCN Code | EAR99 | |
HTS Code | 8541.10.00.80 | |
Samacsys Manufacturer | Microsemi Corporation | |
Additional Feature | HIGH RELIABILITY | |
Application | ULTRA FAST RECOVERY POWER | |
Case Connection | ISOLATED | |
Configuration | SINGLE | |
Diode Element Material | SILICON | |
Diode Type | RECTIFIER DIODE | |
Forward Voltage-Max (VF) | 0.875 V | |
JESD-30 Code | O-LALF-W2 | |
JESD-609 Code | e3 | |
Non-rep Pk Forward Current-Max | 125 A | |
Number of Elements | 1 | |
Number of Phases | 1 | |
Number of Terminals | 2 | |
Operating Temperature-Max | 175 °C | |
Operating Temperature-Min | -65 °C | |
Output Current-Max | 3 A | |
Package Body Material | GLASS | |
Package Shape | ROUND | |
Package Style | LONG FORM | |
Rep Pk Reverse Voltage-Max | 100 V | |
Reverse Current-Max | 5 µA | |
Reverse Recovery Time-Max | 0.03 µs | |
Surface Mount | NO | |
Technology | AVALANCHE | |
Terminal Finish | MATTE TIN OVER NICKEL | |
Terminal Form | WIRE | |
Terminal Position | AXIAL |
Alternate Parts for 1N5809E3
This table gives cross-reference parts and alternative options found for 1N5809E3. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of 1N5809E3, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
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JAN1N5809CB | Rectifier Diode, 1 Phase, 1 Element, 3A, Silicon, HERMETIC SEALED, GLASS, E, 2 PIN | Microsemi Corporation | 1N5809E3 vs JAN1N5809CB |
JAN1N5809 | Rectifier Diode, 1 Phase, 1 Element, 3A, 100V V(RRM), Silicon, | General Instrument Corp | 1N5809E3 vs JAN1N5809 |
JANS1N5809 | Rectifier Diode, 1 Phase, 1 Element, 1.7A, 100V V(RRM), Silicon, HERMETIC SEALED, G112, 2 PIN | Semtech Corporation | 1N5809E3 vs JANS1N5809 |
1N5809-TR | Rectifier Diode, 1 Phase, 1 Element, 6A, 100V V(RRM), Silicon, HERMETIC SEALED, GLASS, E, 2 PIN | Microsemi Corporation | 1N5809E3 vs 1N5809-TR |
1N5809 | Rectifier Diode, 1 Element, 6A, 100V V(RRM), | TT Electronics Resistors | 1N5809E3 vs 1N5809 |
JANTX1N5809 | Rectifier Diode, 1 Phase, 1 Element, 1.7A, 100V V(RRM), Silicon, HERMETIC SEALED, G112, 2 PIN | Semtech Corporation | 1N5809E3 vs JANTX1N5809 |
JANTXV1N5809 | Rectifier Diode, 1 Phase, 1 Element, 3A, Silicon, | Unitrode Corp (RETIRED) | 1N5809E3 vs JANTXV1N5809 |
JANTX1N5809 | Rectifier Diode, 1 Phase, 1 Element, 3A, 100V V(RRM), Silicon, | Unitrode Corporation | 1N5809E3 vs JANTX1N5809 |
JANTXV1N5809CB | Rectifier Diode, 1 Phase, 1 Element, 3A, Silicon, HERMETIC SEALED, GLASS, E, 2 PIN | Microsemi Corporation | 1N5809E3 vs JANTXV1N5809CB |
JANTX1N5809 | Rectifier Diode, 1 Phase, 1 Element, 3A, 100V V(RRM), Silicon, | General Instrument Corp | 1N5809E3 vs JANTX1N5809 |