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Part Details for 2N7000-G by Microchip Technology Inc
Overview of 2N7000-G by Microchip Technology Inc
- Distributor Offerings:
- Number of FFF Equivalents:
- CAD Models:
- Number of Functional Equivalents:
- Part Data Attributes
- Reference Designs:
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Price & Stock for 2N7000-G
| Part # | Distributor | Description | Stock | Price | Buy | |
|---|---|---|---|---|---|---|
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DISTI #
53Y4360
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Newark | Mosfet, N-Ch, 60V, 0.2A, To-92, Channel Type:N Channel, Drain Source Voltage Vds:60V, Continuous Drain Current Id:200Ma, Transistor Mounting:Through Hole, Rds(On) Test Voltage:10V, Gate Source Threshold Voltage Max:3V Rohs Compliant: Yes |Microchip 2N7000-G Min Qty: 1 Package Multiple: 1 Date Code: 1 Container: Bulk | 1000 |
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$0.3850 / $0.5200 | Buy Now |
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DISTI #
31AC2702
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Newark | Mosfet, N-Ch, 60V, 0.2A, To-92 Transistor Polarity:N Channel Continuous Drain Current Id:200Ma Drain Source Voltage Vds:60V On Resistance Rds(On):5Ohm Rds(On) Test Voltage Vgs:10V Threshold Voltage Vgs:3V Power Dissipation Rohs Compliant: Yes |Microchip 2N7000-G Min Qty: 1 Package Multiple: 1 Date Code: 0 Container: Bulk | 2897 |
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$0.3770 / $0.5100 | Buy Now |
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DISTI #
2N7000-G-ND
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DigiKey | MOSFET N-CH 60V 200MA TO92-3 Min Qty: 1 Lead time: 4 Weeks Container: Bag |
2613 In Stock |
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$0.3700 / $0.5000 | Buy Now |
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DISTI #
2N7000-G
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Avnet Americas | Transistor MOSFET N-CH 60V 0.2A 3-Pin TO-92 - Bag (Alt: 2N7000-G) RoHS: Compliant Min Qty: 2000 Package Multiple: 1000 Lead time: 4 Weeks, 0 Days Container: Bag | 0 |
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$0.3700 / $0.5000 | Buy Now |
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DISTI #
53Y4360
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Avnet Americas | Transistor MOSFET N-CH 60V 0.2A 3-Pin TO-92 - Bulk (Alt: 53Y4360) RoHS: Compliant Min Qty: 1 Package Multiple: 1 Lead time: 6 Weeks, 4 Days Container: Bulk | 1000 Partner Stock |
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$0.3850 / $0.5200 | Buy Now |
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DISTI #
689-2N7000-G
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Mouser Electronics | MOSFET 60V 5Ohm RoHS: Compliant | 10196 |
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$0.3700 / $0.5000 | Buy Now |
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DISTI #
2N7000-G
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Microchip Technology Inc | MOSFET, N-CHANNEL ENHANCEMENT MODE, 60V, 5 Ohm, Projected EOL: 2048-10-03 RoHS: Compliant pbFree: Yes Min Qty: 1 Package Multiple: 1 Container: Bag | 45715 |
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$0.2500 / $0.5000 | Buy Now |
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DISTI #
70451472
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RS | MOSFET N-CHANNEL ENHANCEMENT MODE 60V 5 Ohm3 TO-92BAG | Microchip Technology Inc. 2N7000-G RoHS: Not Compliant Min Qty: 1 Package Multiple: 1 Lead time: 6 Weeks, 0 Days Container: Bulk | 4336 |
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$0.3500 / $0.5000 | Buy Now |
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Future Electronics | N-Channel 60 V 5 Ohm 1 W Through Hole Power Mosfet - TO-92 RoHS: Compliant pbFree: Yes Min Qty: 4000 Package Multiple: 1000 Container: Reel | 0Reel |
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$0.3650 / $0.3900 | Buy Now |
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Onlinecomponents.com | MOSFET Transistor - N Channel - 200 mA - 60 V - 5 Ohm - TO-92-3. RoHS: Compliant |
1900 In Stock 51000 Factory Stock |
|
$0.3537 / $0.4389 | Buy Now |
Part Details for 2N7000-G
2N7000-G CAD Models
2N7000-G Part Data Attributes
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2N7000-G
Microchip Technology Inc
Buy Now
Datasheet
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Compare Parts:
2N7000-G
Microchip Technology Inc
200mA, 60V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-92
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| Rohs Code | Yes | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | MICROCHIP TECHNOLOGY INC | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| HTS Code | 8542.39.00.01 | |
| Factory Lead Time | 6 Weeks, 4 Days | |
| Samacsys Manufacturer | Microchip | |
| Additional Feature | HIGH INPUT IMPEDANCE | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 60 V | |
| Drain Current-Max (ID) | 0.2 A | |
| Drain-source On Resistance-Max | 5 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| Feedback Cap-Max (Crss) | 5 pF | |
| JEDEC-95 Code | TO-92 | |
| JESD-30 Code | O-PBCY-T3 | |
| JESD-609 Code | e3 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Operating Temperature-Min | -55 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | ROUND | |
| Package Style | CYLINDRICAL | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 1 W | |
| Qualification Status | Not Qualified | |
| Surface Mount | NO | |
| Terminal Finish | MATTE TIN | |
| Terminal Form | THROUGH-HOLE | |
| Terminal Position | BOTTOM | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for 2N7000-G
This table gives cross-reference parts and alternative options found for 2N7000-G. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of 2N7000-G, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| 2N7000_D26Z | N-Channel Enhancement Mode Field Effect Transistor, 3LD, TO-92, MOLDED, 0.200 IN LINE SPACING LD FORM (J61Z OPTION), 2000/TAPE REEL | Fairchild Semiconductor Corporation | 2N7000-G vs 2N7000_D26Z |
| 2N7000 | Small Signal Field-Effect Transistor, 0.2A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-92, TO-92, 3 PIN | Supertex Inc | 2N7000-G vs 2N7000 |
| 2N7000ZL1 | 200mA, 60V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-92 | Motorola Mobility LLC | 2N7000-G vs 2N7000ZL1 |
| 2N7000RLRM | 200mA, 60V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-92 | Motorola Mobility LLC | 2N7000-G vs 2N7000RLRM |
| 2N7000 | Small Signal Field-Effect Transistor, 0.2A I(D), 60V, 1-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-92 | Samsung Semiconductor | 2N7000-G vs 2N7000 |
| 2N7000 | Small Signal Field-Effect Transistor, 0.2A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-92 | Lite-On Semiconductor Corporation | 2N7000-G vs 2N7000 |
| 2N7000RLRA | 200mA, 60V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-92, CASE 29-11, TO-226, 3 PIN | Rochester Electronics LLC | 2N7000-G vs 2N7000RLRA |
| 2N7000G4 | Small Signal Field-Effect Transistor, 0.2A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-92, | TT Electronics Resistors | 2N7000-G vs 2N7000G4 |
| 2N7000RLRMG | 200mA, 60V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-92, LEAD FREE, CASE 29-11, TO-226, 3 PIN | Rochester Electronics LLC | 2N7000-G vs 2N7000RLRMG |
| SN7000E6296 | Small Signal Field-Effect Transistor, 0.25A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-92 | Siemens | 2N7000-G vs SN7000E6296 |