Part Details for 2N7000G4 by TT Electronics Resistors
Overview of 2N7000G4 by TT Electronics Resistors
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- Number of FFF Equivalents:
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- Number of Functional Equivalents:
- Part Data Attributes
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Part Details for 2N7000G4
2N7000G4 CAD Models
2N7000G4 Part Data Attributes
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2N7000G4
TT Electronics Resistors
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Datasheet
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2N7000G4
TT Electronics Resistors
Small Signal Field-Effect Transistor, 0.2A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-92,
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Rohs Code | Yes | |
Part Life Cycle Code | Active | |
Ihs Manufacturer | TT ELECTRONICS PLC | |
Reach Compliance Code | compliant | |
ECCN Code | EAR99 | |
Configuration | SINGLE | |
DS Breakdown Voltage-Min | 60 V | |
Drain Current-Max (ID) | 0.2 A | |
Drain-source On Resistance-Max | 5 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
Feedback Cap-Max (Crss) | 5 pF | |
JEDEC-95 Code | TO-92 | |
JESD-30 Code | O-PBCY-T3 | |
JESD-609 Code | e4 | |
Number of Elements | 1 | |
Number of Terminals | 3 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 150 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | ROUND | |
Package Style | CYLINDRICAL | |
Polarity/Channel Type | N-CHANNEL | |
Qualification Status | Not Qualified | |
Surface Mount | NO | |
Terminal Finish | GOLD | |
Terminal Form | THROUGH-HOLE | |
Terminal Position | BOTTOM | |
Transistor Element Material | SILICON |
Alternate Parts for 2N7000G4
This table gives cross-reference parts and alternative options found for 2N7000G4. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of 2N7000G4, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
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2N7000_D26Z | N-Channel Enhancement Mode Field Effect Transistor, 3LD, TO-92, MOLDED, 0.200 IN LINE SPACING LD FORM (J61Z OPTION), 2000/TAPE REEL | Fairchild Semiconductor Corporation | 2N7000G4 vs 2N7000_D26Z |
2N7000 | Small Signal Field-Effect Transistor, 0.2A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-92, TO-92, 3 PIN | Supertex Inc | 2N7000G4 vs 2N7000 |
2N7000ZL1 | 200mA, 60V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-92 | Motorola Mobility LLC | 2N7000G4 vs 2N7000ZL1 |
2N7000RLRM | 200mA, 60V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-92 | Motorola Mobility LLC | 2N7000G4 vs 2N7000RLRM |
2N7000 | Small Signal Field-Effect Transistor, 0.2A I(D), 60V, 1-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-92 | Samsung Semiconductor | 2N7000G4 vs 2N7000 |
2N7000 | Small Signal Field-Effect Transistor, 0.2A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-92 | Lite-On Semiconductor Corporation | 2N7000G4 vs 2N7000 |
2N7000RLRA | 200mA, 60V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-92, CASE 29-11, TO-226, 3 PIN | Rochester Electronics LLC | 2N7000G4 vs 2N7000RLRA |
2N7000RLRMG | 200mA, 60V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-92, LEAD FREE, CASE 29-11, TO-226, 3 PIN | Rochester Electronics LLC | 2N7000G4 vs 2N7000RLRMG |
SN7000E6296 | Small Signal Field-Effect Transistor, 0.25A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-92 | Siemens | 2N7000G4 vs SN7000E6296 |
2N7000 | TRANSISTOR 200 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-92, FET General Purpose Small Signal | National Semiconductor Corporation | 2N7000G4 vs 2N7000 |