Part Details for 2SB772-R-BP by Micro Commercial Components
Results Overview of 2SB772-R-BP by Micro Commercial Components
- Distributor Offerings: (1 listing)
- Number of FFF Equivalents: (0 replacements)
- Tariff Estimator: (Not Available)
- Number of Functional Equivalents: (0 options)
- CAD Models: (Request Part)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Applications
Energy and Power Systems
Renewable Energy
Automotive
2SB772-R-BP Information
2SB772-R-BP by Micro Commercial Components is a Power Bipolar Transistor.
Power Bipolar Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for 2SB772-R-BP
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
2SB772-R-BP-ND
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DigiKey | TRANS PNP 30V 3A TO-126 Container: Bulk |
0 Bulk |
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Part Details for 2SB772-R-BP
2SB772-R-BP CAD Models
2SB772-R-BP Part Data Attributes
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2SB772-R-BP
Micro Commercial Components
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Datasheet
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2SB772-R-BP
Micro Commercial Components
Power Bipolar Transistor, 3A I(C), 30V V(BR)CEO, 1-Element, PNP, Silicon, TO-126, Plastic/Epoxy, 3 Pin
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| Pbfree Code | Yes | |
| Rohs Code | Yes | |
| Part Life Cycle Code | Obsolete | |
| Part Package Code | SIP | |
| Package Description | Plastic Package-3 | |
| Pin Count | 3 | |
| ECCN Code | EAR99 | |
| Collector Current-Max (IC) | 3 A | |
| Collector-Emitter Voltage-Max | 30 V | |
| Configuration | Single | |
| DC Current Gain-Min (hFE) | 60 | |
| JEDEC-95 Code | TO-126 | |
| JESD-30 Code | R-PSIP-T3 | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Package Body Material | Plastic/Epoxy | |
| Package Shape | Rectangular | |
| Package Style | In-Line | |
| Peak Reflow Temperature (Cel) | 260 | |
| Polarity/Channel Type | Pnp | |
| Qualification Status | Not Qualified | |
| Surface Mount | No | |
| Terminal Finish | Matte Tin | |
| Terminal Form | Through-Hole | |
| Terminal Position | Single | |
| Time@Peak Reflow Temperature-Max (s) | 10 | |
| Transistor Element Material | Silicon | |
| Transition Frequency-Nom (fT) | 50 Mhz |
2SB772-R-BP Frequently Asked Questions (FAQ)
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The recommended PCB footprint for the 2SB772-R-BP is a standard SOT-23 package with a 1.3mm x 0.8mm pad size and a 0.5mm lead pitch.
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The 2SB772-R-BP is rated for operation up to 150°C, but it's recommended to derate the power dissipation at higher temperatures to ensure reliability. Consult the datasheet for thermal resistance and power derating curves.
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To ensure proper biasing, follow the recommended operating conditions in the datasheet, including the base-emitter voltage (VBE) and collector-emitter voltage (VCE) ranges. Additionally, consider using a resistor network or voltage regulator to stabilize the bias voltage.
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The 2SB772-R-BP has a transition frequency (fT) of 3 GHz, making it suitable for high-frequency applications up to several hundred MHz. However, for frequencies above 1 GHz, consider using a transistor with a higher fT or a specialized RF transistor.
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Yes, the 2SB772-R-BP can be used in switching applications, but it's essential to consider the transistor's switching characteristics, such as the rise and fall times, and ensure that the circuit is designed to minimize switching losses and electromagnetic interference (EMI).