Part Details for 2SC3147 by Toshiba America Electronic Components
Overview of 2SC3147 by Toshiba America Electronic Components
- Distributor Offerings: (0 listings)
- Number of FFF Equivalents: (0 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Part Details for 2SC3147
2SC3147 CAD Models
2SC3147 Part Data Attributes
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2SC3147
Toshiba America Electronic Components
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Datasheet
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2SC3147
Toshiba America Electronic Components
TRANSISTOR VHF BAND, Si, NPN, RF POWER TRANSISTOR, BIP RF Power
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Part Life Cycle Code | Obsolete | |
Ihs Manufacturer | TOSHIBA CORP | |
Package Description | CERAMIC, 2-13C1A, 6 PIN | |
Reach Compliance Code | unknown | |
Highest Frequency Band | VERY HIGH FREQUENCY BAND | |
JESD-30 Code | O-CXFM-F6 | |
Number of Terminals | 6 | |
Package Body Material | CERAMIC, METAL-SEALED COFIRED | |
Package Shape | ROUND | |
Package Style | FLANGE MOUNT | |
Polarity/Channel Type | NPN | |
Qualification Status | Not Qualified | |
Surface Mount | YES | |
Terminal Form | FLAT | |
Terminal Position | UNSPECIFIED | |
Transistor Element Material | SILICON |
Alternate Parts for 2SC3147
This table gives cross-reference parts and alternative options found for 2SC3147. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of 2SC3147, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
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VHB50-28S | RF Power Bipolar Transistor, 1-Element, Very High Frequency Band, Silicon, NPN, 0.380 INCH, STUD PACKAGE-4 | Advanced Semiconductor Inc | 2SC3147 vs VHB50-28S |
SD1075 | RF Power Bipolar Transistor, Ultra High Frequency Band, Silicon, NPN, 0.500 INCH, PLASTIC, M111, FM-6 | Microsemi Corporation | 2SC3147 vs SD1075 |
2N6080 | VHF BAND, Si, NPN, RF POWER TRANSISTOR | Motorola Mobility LLC | 2SC3147 vs 2N6080 |
2N6080 | RF Power Bipolar Transistor, 1-Element, Very High Frequency Band, Silicon, NPN, 0.380 INCH, PLASTIC, M135, 4 PIN | Microsemi Corporation | 2SC3147 vs 2N6080 |
BLV13 | TRANSISTOR VHF BAND, Si, NPN, RF POWER TRANSISTOR, BIP RF Power | NXP Semiconductors | 2SC3147 vs BLV13 |
MRF240A | RF Power Bipolar Transistor, 1-Element, Very High Frequency Band, Silicon, NPN | Motorola Semiconductor Products | 2SC3147 vs MRF240A |
PTB20134 | RF Power Bipolar Transistor, Ultra High Frequency Band, Silicon, NPN | Ericsson | 2SC3147 vs PTB20134 |
SD1070 | RF Power Bipolar Transistor, 1-Element, Ultra High Frequency Band, Silicon, NPN, M137, 3 PIN | Microsemi Corporation | 2SC3147 vs SD1070 |
ULBM5 | RF Power Bipolar Transistor, 1-Element, Ultra High Frequency Band, Silicon, NPN, 0.280 INCH, STUD PACKAGE-4 | Advanced Semiconductor Inc | 2SC3147 vs ULBM5 |
SD1433 | UHF BAND, Si, NPN, RF POWER TRANSISTOR, 0.280 INCH, PLASTIC, M122, 4 PIN | STMicroelectronics | 2SC3147 vs SD1433 |