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410mA, 60V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-39
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Part # | Distributor | Description | Stock | Price | Buy | |
---|---|---|---|---|---|---|
DISTI #
2N6660MC-ND
|
DigiKey | MOSFET N-CH 60V 410MA TO39 Min Qty: 1 Lead time: 6 Weeks Container: Bag |
3989 In Stock |
|
$14.0375 / $15.9000 | Buy Now |
DISTI #
2N6660
|
Avnet Americas | Trans MOSFET N-CH 60V 0.41A 3-Pin TO-39 - Bag (Alt: 2N6660) RoHS: Compliant Min Qty: 500 Package Multiple: 500 Lead time: 6 Weeks, 0 Days Container: Bag | 0 |
|
$13.2000 / $15.9000 | Buy Now |
DISTI #
689-2N6660
|
Mouser Electronics | MOSFET 60V 3Ohm RoHS: Compliant | 632 |
|
$14.0300 / $15.9000 | Buy Now |
DISTI #
E54:1762_08081752
|
Arrow Electronics | Trans MOSFET N-CH Si 60V 0.41A 3-Pin TO-39 Bag Min Qty: 500 Package Multiple: 500 Lead time: 6 Weeks Date Code: 2333 | Europe - 500 |
|
$13.3100 / $13.6500 | Buy Now |
DISTI #
V99:2348_06427651
|
Arrow Electronics | Trans MOSFET N-CH Si 60V 0.41A 3-Pin TO-39 Bag Min Qty: 1 Package Multiple: 1 Lead time: 6 Weeks Date Code: 2225 | Americas - 140 |
|
$15.0800 | Buy Now |
DISTI #
2N6660
|
Microchip Technology Inc | MOSFET, N-CHANNEL ENHANCEMENT MODE, 60V, 3 Ohm, Projected EOL: 2048-10-03 RoHS: Compliant pbFree: Yes Min Qty: 1 Package Multiple: 1 Container: Bag |
559 Alternates Available |
|
$10.4300 / $15.9000 | Buy Now |
DISTI #
70452373
|
RS | MOSFET, N-CHANNEL ENHANCEMENT MODE, 60V, 3 Ohm3 TO-39 BAG | Microchip Technology Inc. 2N6660 RoHS: Not Compliant Min Qty: 500 Package Multiple: 1 Lead time: 6 Weeks, 0 Days Container: Bulk | 0 |
|
$24.3400 / $28.6400 | RFQ |
|
Future Electronics | 2N6660 Series 60 V 3 Ohm Through Hole N-Channel HEXFET Mosfet - TO-205AD (TO-39) RoHS: Compliant pbFree: Yes Min Qty: 1 Package Multiple: 1 Container: Bulk | 232Bulk |
|
$14.6400 / $15.3700 | Buy Now |
|
Onlinecomponents.com | Trans MOSFET N-CH Si 60V 0.41A 3-Pin TO-39 Bag |
586 In Stock 500 Factory Stock |
|
$13.5500 / $17.4400 | Buy Now |
DISTI #
51639850
|
Verical | Trans MOSFET N-CH Si 60V 0.41A 3-Pin TO-39 Bag Min Qty: 3 Package Multiple: 1 Date Code: 1745 | Americas - 586 |
|
$16.2090 / $21.5043 | Buy Now |
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|
2N6660
Microchip Technology Inc
Buy Now
Datasheet
|
Compare Parts:
2N6660
Microchip Technology Inc
410mA, 60V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-39
|
Rohs Code | Yes | |
Part Life Cycle Code | Active | |
Ihs Manufacturer | MICROCHIP TECHNOLOGY INC | |
Package Description | TO-39, 3 PIN | |
Reach Compliance Code | compliant | |
ECCN Code | EAR99 | |
HTS Code | 8542.39.00.01 | |
Factory Lead Time | 6 Weeks | |
Samacsys Manufacturer | Microchip | |
Additional Feature | HIGH INPUT IMPEDANCE | |
Case Connection | DRAIN | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 60 V | |
Drain Current-Max (ID) | 0.41 A | |
Drain-source On Resistance-Max | 3 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
Feedback Cap-Max (Crss) | 10 pF | |
JEDEC-95 Code | TO-39 | |
JESD-30 Code | O-MBCY-W3 | |
JESD-609 Code | e4 | |
Number of Elements | 1 | |
Number of Terminals | 3 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 150 °C | |
Operating Temperature-Min | -55 °C | |
Package Body Material | METAL | |
Package Shape | ROUND | |
Package Style | CYLINDRICAL | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation Ambient-Max | 6.25 W | |
Power Dissipation-Max (Abs) | 6.25 W | |
Pulsed Drain Current-Max (IDM) | 3 A | |
Qualification Status | Not Qualified | |
Reference Standard | TS 16949 | |
Surface Mount | NO | |
Terminal Finish | NICKEL GOLD | |
Terminal Form | WIRE | |
Terminal Position | BOTTOM | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON | |
Turn-off Time-Max (toff) | 10 ns | |
Turn-on Time-Max (ton) | 10 ns |
This table gives cross-reference parts and alternative options found for 2N6660. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of 2N6660, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
---|---|---|---|
SI2337DS-T1-E3 | Small Signal Field-Effect Transistor, 0.0012A I(D), 80V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236, ROHS COMPLIANT PACKAGE-3 | Vishay Intertechnologies | 2N6660 vs SI2337DS-T1-E3 |
MMBF170-7-F | Small Signal Field-Effect Transistor, 0.5A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC PACKAGE-3 | Diodes Incorporated | 2N6660 vs MMBF170-7-F |
TN5325N3-G | 215mA, 250V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-92 | Microchip Technology Inc | 2N6660 vs TN5325N3-G |
ZVN4106FTA | Small Signal Field-Effect Transistor, 0.2A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, | Diodes Incorporated | 2N6660 vs ZVN4106FTA |
RUR040N02TL | Small Signal Field-Effect Transistor, 4A I(D), 20V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TSMT3, 3 PIN | ROHM Semiconductor | 2N6660 vs RUR040N02TL |
VN2110K1-G | 200mA, 100V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-236AB | Microchip Technology Inc | 2N6660 vs VN2110K1-G |
SI2306BDS-T1-E3 | Power Field-Effect Transistor, | Vishay Intertechnologies | 2N6660 vs SI2306BDS-T1-E3 |
VP2110K1-G | 120mA, 100V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-236AB | Microchip Technology Inc | 2N6660 vs VP2110K1-G |
ZVP3306FTA | Small Signal Field-Effect Transistor, 0.09A I(D), 60V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, | Diodes Incorporated | 2N6660 vs ZVP3306FTA |
RHP020N06T100 | Small Signal Field-Effect Transistor, 2A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MPT3, 3 PIN | ROHM Semiconductor | 2N6660 vs RHP020N06T100 |