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Small Signal Field-Effect Transistor, 0.1A I(D), 30V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, UMT3, 3 PIN
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
40P3488
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Newark | Mosfet, N Channel, 30V, 100Ma, Channel Type:N Channel, Drain Source Voltage Vds:30V, Continuous Drain Current Id:100Ma, Transistor Mounting:Surface Mount, Rds(On) Test Voltage:4V, Gate Source Threshold Voltage Max:1.5V Rohs Compliant: Yes |Rohm 2SK3018T106 Min Qty: 5 Package Multiple: 1 Date Code: 0 Container: Cut Tape | 0 |
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$0.1010 / $0.3740 | Buy Now |
DISTI #
86AK6756
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Newark | Mosfet, N-Ch, 30V, 0.1A, Sot-323 Rohs Compliant: Yes |Rohm 2SK3018T106 Min Qty: 3000 Package Multiple: 1 Date Code: 1 Container: Reel | 0 |
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$0.0480 / $0.0830 | Buy Now |
DISTI #
2SK3018T106CT-ND
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DigiKey | MOSFET N-CH 30V 100MA UMT3 Lead time: 21 Weeks Container: Cut Tape (CT), Digi-Reel®, Tape & Reel (TR) | Temporarily Out of Stock |
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Buy Now | |
DISTI #
2SK3018T106
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Avnet Americas | Trans MOSFET N-CH 30V 0.1A 3-Pin UMT T/R - Tape and Reel (Alt: 2SK3018T106) RoHS: Compliant Min Qty: 1 Package Multiple: 1 Lead time: 21 Weeks, 0 Days Container: Reel | 0 |
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$0.0429 / $0.0488 | Buy Now |
DISTI #
2SK3018T106
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Avnet Americas | Trans MOSFET N-CH 30V 0.1A 3-Pin UMT T/R - Tape and Reel (Alt: 2SK3018T106) RoHS: Compliant Min Qty: 2500 Package Multiple: 2500 Container: Reel | 0 |
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RFQ | |
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Future Electronics | Single N-Channel 200 mW 30 V 13 Ohm Surface Mount MosFet - UMT-3 RoHS: Compliant pbFree: Yes Min Qty: 3000 Package Multiple: 3000 Container: Reel | 36000Reel |
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$0.0393 / $0.0441 | Buy Now |
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Bristol Electronics | 30000 |
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RFQ | ||
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Quest Components | 100 mA, 30 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET | 894 |
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$0.0544 / $0.1208 | Buy Now |
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Quest Components | 100 mA, 30 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET | 196 |
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$0.1050 / $0.3500 | Buy Now |
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Quest Components | 100 mA, 30 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET | 896 |
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$0.0900 / $0.3000 | Buy Now |
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2SK3018T106
ROHM Semiconductor
Buy Now
Datasheet
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Compare Parts:
2SK3018T106
ROHM Semiconductor
Small Signal Field-Effect Transistor, 0.1A I(D), 30V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, UMT3, 3 PIN
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Pbfree Code | Yes | |
Rohs Code | Yes | |
Part Life Cycle Code | Not Recommended | |
Ihs Manufacturer | ROHM CO LTD | |
Package Description | UMT3, 3 PIN | |
Pin Count | 3 | |
Reach Compliance Code | compliant | |
ECCN Code | EAR99 | |
Samacsys Manufacturer | ROHM Semiconductor | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 30 V | |
Drain Current-Max (ID) | 0.1 A | |
Drain-source On Resistance-Max | 8 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JESD-30 Code | R-PDSO-G3 | |
JESD-609 Code | e1 | |
Moisture Sensitivity Level | 1 | |
Number of Elements | 1 | |
Number of Terminals | 3 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 150 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE | |
Peak Reflow Temperature (Cel) | 260 | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation-Max (Abs) | 0.2 W | |
Qualification Status | Not Qualified | |
Surface Mount | YES | |
Terminal Finish | Tin/Silver/Copper (Sn/Ag/Cu) | |
Terminal Form | GULL WING | |
Terminal Position | DUAL | |
Time@Peak Reflow Temperature-Max (s) | 10 | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |
This table gives cross-reference parts and alternative options found for 2SK3018T106. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of 2SK3018T106, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
---|---|---|---|
SI2337DS-T1-E3 | Small Signal Field-Effect Transistor, 0.0012A I(D), 80V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236, ROHS COMPLIANT PACKAGE-3 | Vishay Intertechnologies | 2SK3018T106 vs SI2337DS-T1-E3 |
MMBF170-7-F | Small Signal Field-Effect Transistor, 0.5A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC PACKAGE-3 | Diodes Incorporated | 2SK3018T106 vs MMBF170-7-F |
TN5325N3-G | 215mA, 250V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-92 | Microchip Technology Inc | 2SK3018T106 vs TN5325N3-G |
ZVN4106FTA | Small Signal Field-Effect Transistor, 0.2A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, | Diodes Incorporated | 2SK3018T106 vs ZVN4106FTA |
RUR040N02TL | Small Signal Field-Effect Transistor, 4A I(D), 20V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TSMT3, 3 PIN | ROHM Semiconductor | 2SK3018T106 vs RUR040N02TL |
VN2110K1-G | 200mA, 100V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-236AB | Microchip Technology Inc | 2SK3018T106 vs VN2110K1-G |
SI2306BDS-T1-E3 | Power Field-Effect Transistor, | Vishay Intertechnologies | 2SK3018T106 vs SI2306BDS-T1-E3 |
VP2110K1-G | 120mA, 100V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-236AB | Microchip Technology Inc | 2SK3018T106 vs VP2110K1-G |
ZVP3306FTA | Small Signal Field-Effect Transistor, 0.09A I(D), 60V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, | Diodes Incorporated | 2SK3018T106 vs ZVP3306FTA |
RHP020N06T100 | Small Signal Field-Effect Transistor, 2A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MPT3, 3 PIN | ROHM Semiconductor | 2SK3018T106 vs RHP020N06T100 |