Datasheets
APT10M07JVFR by:

Power Field-Effect Transistor, 225A I(D), 100V, 0.007ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

Part Details for APT10M07JVFR by Microchip Technology Inc

Overview of APT10M07JVFR by Microchip Technology Inc

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Applications Consumer Electronics Energy and Power Systems Renewable Energy

Price & Stock for APT10M07JVFR

Part # Distributor Description Stock Price Buy
DISTI # 78AH5515
Newark Fredfet Mos5 100 V 7 Mohm Sot-227 4 Sot-227 Tube Rohs Compliant: Yes |Microchip APT10M07JVFR Min Qty: 10 Package Multiple: 1 Date Code: 0 Container: Bulk 0
  • 1 $68.0100
  • 100 $58.7500
  • 250 $56.5300
  • 500 $55.2300
$55.2300 / $68.0100 Buy Now
DISTI # APT10M07JVFR-ND
DigiKey MOSFET N-CH 100V 225A ISOTOP Min Qty: 10 Lead time: 49 Weeks Container: Tube Temporarily Out of Stock
  • 10 $68.0100
$68.0100 Buy Now
DISTI # APT10M07JVFR
Avnet Americas Trans MOSFET N-CH 100V 225A 4-Pin SOT-227 - Rail/Tube (Alt: APT10M07JVFR) RoHS: Compliant Min Qty: 10 Package Multiple: 1 Lead time: 43 Weeks, 6 Days Container: Tube 0
  • 1 $68.0100
  • 100 $58.7500
  • 250 $56.5300
  • 500 $55.2300
$55.2300 / $68.0100 Buy Now
DISTI # 494-APT10M07JVFR
Mouser Electronics Discrete Semiconductor Modules FREDFET MOS5 100 V 7 mOhm SOT-227 RoHS: Compliant 0
  • 1 $68.0100
$68.0100 Order Now
DISTI # APT10M07JVFR
Microchip Technology Inc FREDFET MOS5 100 V 7 mOhm SOT-227, Projected EOL: 2048-10-03 RoHS: Compliant pbFree: Yes 0

Alternates Available
  • 1 $68.0100
  • 100 $58.7500
  • 250 $56.5300
  • 500 $55.2300
  • 1,000 $53.8800
  • 5,000 $52.1100
$52.1100 / $68.0100 Buy Now
Future Electronics . RoHS: Compliant pbFree: Yes Min Qty: 10 Package Multiple: 10 Container: Tube 0
Tube
  • 10 $66.0900
  • 20 $65.5200
  • 30 $65.1900
  • 40 $64.7800
$64.7800 / $66.0900 Buy Now
Onlinecomponents.com Trans MOSFET N-CH 100V 225A 4-Pin SOT-227 Tube 10 In Stock
  • 1 $91.2900
  • 5 $74.1700
  • 10 $72.3500
  • 25 $70.8400
  • 50 $70.4900
  • 100 $67.6300
  • 250 $66.6300
$66.6300 / $91.2900 Buy Now
DISTI # APT10M07JVFR
Avnet Americas Trans MOSFET N-CH 100V 225A 4-Pin SOT-227 - Rail/Tube (Alt: APT10M07JVFR) RoHS: Compliant Min Qty: 10 Package Multiple: 1 Lead time: 43 Weeks, 6 Days Container: Tube 0
  • 1 $68.0100
  • 100 $58.7500
  • 250 $56.5300
  • 500 $55.2300
$55.2300 / $68.0100 Buy Now
DISTI # APT10M07JVFR
TME Module, single transistor, 100V, 225A, ISOTOP, screw, Idm: 900A Min Qty: 1 0
  • 1 $98.3100
  • 3 $88.4800
  • 10 $78.1800
$78.1800 / $98.3100 RFQ
DISTI # APT10M07JVFR
Avnet Americas Trans MOSFET N-CH 100V 225A 4-Pin SOT-227 - Rail/Tube (Alt: APT10M07JVFR) RoHS: Compliant Min Qty: 10 Package Multiple: 1 Lead time: 43 Weeks, 6 Days Container: Tube 0
  • 1 $68.0100
  • 100 $58.7500
  • 250 $56.5300
  • 500 $55.2300
$55.2300 / $68.0100 Buy Now
NAC FG, FREDFET, 100V, 0.007_OHM, SOT-227 RoHS: Compliant Min Qty: 5 Package Multiple: 1 Container: Tube 0
  • 1 $63.0900
  • 100 $58.1100
  • 500 $55.2000
  • 800 $53.8500
$53.8500 / $63.0900 Buy Now
DISTI # APT10M07JVFR
Avnet Silica Trans MOSFET N-CH 100V 225A 4-Pin SOT-227 (Alt: APT10M07JVFR) RoHS: Not Compliant Min Qty: 10 Package Multiple: 1 Lead time: 5 Weeks, 3 Days Silica - 0
Buy Now
DISTI # APT10M07JVFR
EBV Elektronik Trans MOSFET N-CH 100V 225A 4-Pin SOT-227 (Alt: APT10M07JVFR) RoHS: Not Compliant Min Qty: 10 Package Multiple: 1 Lead time: 7 Weeks, 1 Days EBV - 0
Buy Now
Master Electronics Trans MOSFET N-CH 100V 225A 4-Pin SOT-227 Tube 10 In Stock
  • 1 $91.2900
  • 5 $74.1700
  • 10 $72.3500
  • 25 $70.8400
  • 50 $70.4900
  • 100 $67.6300
  • 250 $66.6300
$66.6300 / $91.2900 Buy Now

Part Details for APT10M07JVFR

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APT10M07JVFR Part Data Attributes

APT10M07JVFR Microchip Technology Inc
Buy Now Datasheet
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APT10M07JVFR Microchip Technology Inc Power Field-Effect Transistor, 225A I(D), 100V, 0.007ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
Rohs Code Yes
Part Life Cycle Code Active
Ihs Manufacturer MICROCHIP TECHNOLOGY INC
Reach Compliance Code compliant
Factory Lead Time 43 Weeks, 6 Days
Avalanche Energy Rating (Eas) 3600 mJ
Case Connection ISOLATED
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 100 V
Drain Current-Max (ID) 225 A
Drain-source On Resistance-Max 0.007 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JESD-30 Code R-PUFM-X4
JESD-609 Code e1
Number of Elements 1
Number of Terminals 4
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 700 W
Pulsed Drain Current-Max (IDM) 900 A
Qualification Status Not Qualified
Reference Standard UL RECOGNIZED
Surface Mount NO
Terminal Finish TIN SILVER COPPER
Terminal Form UNSPECIFIED
Terminal Position UPPER
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for APT10M07JVFR

This table gives cross-reference parts and alternative options found for APT10M07JVFR. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of APT10M07JVFR, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
APT10M07JVR Power Field-Effect Transistor, 225A I(D), 100V, 0.007ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ISOTOP-4 Advanced Power Technology APT10M07JVFR vs APT10M07JVR
APT10M07JVR Power Field-Effect Transistor, 1-Element, Metal-oxide Semiconductor FET Microsemi Corporation APT10M07JVFR vs APT10M07JVR
APT10M07JVFR Power Field-Effect Transistor, 225A I(D), 100V, 0.007ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ISOTOP-4 Microsemi Corporation APT10M07JVFR vs APT10M07JVFR
Part Number Description Manufacturer Compare
BUK416-100AE TRANSISTOR 110 A, 100 V, 0.013 ohm, N-CHANNEL, Si, POWER, MOSFET, FET General Purpose Power NXP Semiconductors APT10M07JVFR vs BUK416-100AE
IXFN200N10P Power Field-Effect Transistor, 200A I(D), 100V, 0.0075ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, PLASTIC, MINIBLOC-4 Littelfuse Inc APT10M07JVFR vs IXFN200N10P
IXFE180N10 Power Field-Effect Transistor, 176A I(D), 100V, 0.008ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ISOPLUS227, 4 PIN IXYS Corporation APT10M07JVFR vs IXFE180N10
APT10M07JVR Power Field-Effect Transistor, 1-Element, Metal-oxide Semiconductor FET Microsemi Corporation APT10M07JVFR vs APT10M07JVR
BUK416-100BE TRANSISTOR 100 A, 100 V, 0.016 ohm, N-CHANNEL, Si, POWER, MOSFET, FET General Purpose Power NXP Semiconductors APT10M07JVFR vs BUK416-100BE
APT10M07JVFR Power Field-Effect Transistor, 225A I(D), 100V, 0.007ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ISOTOP-4 Microsemi Corporation APT10M07JVFR vs APT10M07JVFR
APT10M07JVR Power Field-Effect Transistor, 225A I(D), 100V, 0.007ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ISOTOP-4 Advanced Power Technology APT10M07JVFR vs APT10M07JVR
IXFN150N10 Power Field-Effect Transistor, 150A I(D), 100V, 0.012ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MINIBLOC-4 Littelfuse Inc APT10M07JVFR vs IXFN150N10
IXFN280N085 Power Field-Effect Transistor, 280A I(D), 85V, 0.0044ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MINIBLOC-4 IXYS Corporation APT10M07JVFR vs IXFN280N085
IXFN180N10 Power Field-Effect Transistor, 180A I(D), 100V, 0.008ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MINIBLOC-4 IXYS Corporation APT10M07JVFR vs IXFN180N10

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