Datasheets
IXFN200N10P by:

Power Field-Effect Transistor, 200A I(D), 100V, 0.0075ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, PLASTIC, MINIBLOC-4

Part Details for IXFN200N10P by Littelfuse Inc

Overview of IXFN200N10P by Littelfuse Inc

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Part Details for IXFN200N10P

IXFN200N10P Part Data Attributes

IXFN200N10P Littelfuse Inc
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IXFN200N10P Littelfuse Inc Power Field-Effect Transistor, 200A I(D), 100V, 0.0075ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, PLASTIC, MINIBLOC-4
Rohs Code Yes
Part Life Cycle Code Active
Ihs Manufacturer LITTELFUSE INC
Reach Compliance Code compliant
ECCN Code EAR99
Samacsys Manufacturer LITTELFUSE
Additional Feature AVALANCHE RATED
Avalanche Energy Rating (Eas) 4000 mJ
Case Connection ISOLATED
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 100 V
Drain Current-Max (ID) 200 A
Drain-source On Resistance-Max 0.0075 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JESD-30 Code R-PUFM-X4
Number of Elements 1
Number of Terminals 4
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 175 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Polarity/Channel Type N-CHANNEL
Pulsed Drain Current-Max (IDM) 400 A
Qualification Status Not Qualified
Reference Standard UL RECOGNIZED
Surface Mount NO
Terminal Finish NICKEL
Terminal Form UNSPECIFIED
Terminal Position UPPER
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for IXFN200N10P

This table gives cross-reference parts and alternative options found for IXFN200N10P. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IXFN200N10P, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
BUK416-100AE TRANSISTOR 110 A, 100 V, 0.013 ohm, N-CHANNEL, Si, POWER, MOSFET, FET General Purpose Power NXP Semiconductors IXFN200N10P vs BUK416-100AE
IXFE180N10 Power Field-Effect Transistor, 176A I(D), 100V, 0.008ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ISOPLUS227, 4 PIN IXYS Corporation IXFN200N10P vs IXFE180N10
APT10M07JVR Power Field-Effect Transistor, 1-Element, Metal-oxide Semiconductor FET Microsemi Corporation IXFN200N10P vs APT10M07JVR
BUK416-100BE TRANSISTOR 100 A, 100 V, 0.016 ohm, N-CHANNEL, Si, POWER, MOSFET, FET General Purpose Power NXP Semiconductors IXFN200N10P vs BUK416-100BE
APT10M07JVFR Power Field-Effect Transistor, 225A I(D), 100V, 0.007ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ISOTOP-4 Microsemi Corporation IXFN200N10P vs APT10M07JVFR
APT10M07JVR Power Field-Effect Transistor, 225A I(D), 100V, 0.007ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ISOTOP-4 Advanced Power Technology IXFN200N10P vs APT10M07JVR
IXFN150N10 Power Field-Effect Transistor, 150A I(D), 100V, 0.012ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MINIBLOC-4 Littelfuse Inc IXFN200N10P vs IXFN150N10
IXFN280N085 Power Field-Effect Transistor, 280A I(D), 85V, 0.0044ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MINIBLOC-4 IXYS Corporation IXFN200N10P vs IXFN280N085
IXFN180N10 Power Field-Effect Transistor, 180A I(D), 100V, 0.008ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MINIBLOC-4 IXYS Corporation IXFN200N10P vs IXFN180N10
APT10M07JVFR Power Field-Effect Transistor, 225A I(D), 100V, 0.007ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET Microchip Technology Inc IXFN200N10P vs APT10M07JVFR

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