Part Details for APT8024JLL by Advanced Power Technology
Results Overview of APT8024JLL by Advanced Power Technology
- Distributor Offerings: (1 listing)
- Number of FFF Equivalents: (0 replacements)
- Tariff Estimator: (Not Available)
- Number of Functional Equivalents: (0 options)
- CAD Models: (Request Part)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Applications
Consumer Electronics
Energy and Power Systems
Renewable Energy
APT8024JLL Information
APT8024JLL by Advanced Power Technology is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for APT8024JLL
| Part # | Distributor | Description | Stock | Price | Buy | |
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Vyrian | Power Field-Effect Transistor, 29A I(D), 800V, 0.24ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 676 |
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RFQ |
Part Details for APT8024JLL
APT8024JLL CAD Models
APT8024JLL Part Data Attributes
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APT8024JLL
Advanced Power Technology
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Datasheet
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APT8024JLL
Advanced Power Technology
Power Field-Effect Transistor, 29A I(D), 800V, 0.24ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
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| Rohs Code | Yes | |
| Part Life Cycle Code | Transferred | |
| Package Description | Isotop-4 | |
| ECCN Code | EAR99 | |
| Avalanche Energy Rating (Eas) | 2500 Mj | |
| Case Connection | Isolated | |
| Configuration | Single With Built-In Diode | |
| DS Breakdown Voltage-Min | 800 V | |
| Drain Current-Max (ID) | 29 A | |
| Drain-source On Resistance-Max | 0.24 Ω | |
| FET Technology | Metal-Oxide Semiconductor | |
| JESD-30 Code | R-PUFM-X4 | |
| Number of Elements | 1 | |
| Number of Terminals | 4 | |
| Operating Mode | Enhancement Mode | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | Plastic/Epoxy | |
| Package Shape | Rectangular | |
| Package Style | Flange Mount | |
| Peak Reflow Temperature (Cel) | Not Specified | |
| Polarity/Channel Type | N-Channel | |
| Power Dissipation-Max (Abs) | 460 W | |
| Pulsed Drain Current-Max (IDM) | 116 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | No | |
| Terminal Form | Unspecified | |
| Terminal Position | Upper | |
| Time@Peak Reflow Temperature-Max (s) | Not Specified | |
| Transistor Application | Switching | |
| Transistor Element Material | Silicon |