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Synchronous DRAM, 16MX16, 5ns, CMOS, PDSO54, 0.400 INCH, HALOGEN FREE AND ROHS COMPLIANT, PLASTIC, TSOP2-54
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
82AK3784
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Newark | Dram, 166Mhz, 256Mbit, Tsop-Ii-54, Dram Type:Sdram, Memory Configuration:16M X 16Bit, Clock Frequency Max:166Mhz, Ic Case/Package:Tsop-Ii, No. Of Pins:54Pins, Supply Voltage Nom:3.3V, Ic Mounting:Surface Mount, Product Range:- Rohs Compliant: Yes |Alliance Memory AS4C16M16SA-6TCN RoHS: Compliant Min Qty: 1 Package Multiple: 1 Date Code: 0 Container: Bulk | 108 |
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$2.3600 | Buy Now |
DISTI #
1450-1252-ND
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DigiKey | IC DRAM 256MBIT PAR 54TSOP II Min Qty: 1 Lead time: 8 Weeks Container: Tray |
1842 In Stock |
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$3.1292 / $4.3300 | Buy Now |
DISTI #
AS4C16M16SA-6TCN
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Avnet Americas | DRAM Synchronous 16M x 16 bit Synchronous - Trays (Alt: AS4C16M16SA-6TCN) RoHS: Compliant Min Qty: 108 Package Multiple: 108 Lead time: 8 Weeks, 0 Days Container: Tray | 114511 Factory Stock |
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$2.5200 | Buy Now |
DISTI #
913-4C16M16SA-6TCN
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Mouser Electronics | DRAM SDRAM, 256Mb, 16M x 16, 3.3V, 54pin TSOP II, 166 Mhz, Commercial Temp - Tray RoHS: Compliant | 277 |
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$3.1100 / $4.3300 | Buy Now |
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Future Electronics | AS4C4M16SA Series 256 Mb (16 M x 16) 167 MHz CMOS Synchronous DRAM -TSOP II-54 RoHS: Compliant pbFree: Yes Min Qty: 108 Package Multiple: 108 Lead time: 8 Weeks Container: Tray | 121Tray |
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$3.0500 / $3.1800 | Buy Now |
DISTI #
AS4C16M16SA-6TCN
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TME | IC: DRAM memory, 256MbDRAM, 16Mx16bit, 3.3V, 166MHz, 5.4ns, 0÷70°C Min Qty: 1 | 200 |
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$3.3900 / $4.9700 | Buy Now |
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Karl Kruse GmbH & Co KG | SDR 256Mb 16M x 16 3.3V 54pin TSOP II 166 Mhz Commercial Temp | 120559 |
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RFQ | |
DISTI #
AS4C16M16SA-6TCN
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Avnet Asia | DRAM Synchronous 16M x 16 bit Synchronous (Alt: AS4C16M16SA-6TCN) RoHS: Compliant Min Qty: 1080 Package Multiple: 1080 Lead time: 8 Weeks, 0 Days | 0 |
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RFQ | |
DISTI #
AS4C16M16SA-6TCN
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Avnet Silica | DRAM Synchronous 16M x 16 bit Synchronous (Alt: AS4C16M16SA-6TCN) RoHS: Compliant Min Qty: 108 Package Multiple: 108 Lead time: 9 Weeks, 0 Days | Silica - 648 |
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Buy Now | |
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New Advantage Corporation | SDRAM 256M-A die, 16M x 16, 3.3V, 166Mhz, Commercial (0 ~ 70�C), 54pin TSOP II RoHS: Compliant Min Qty: 1 Package Multiple: 108 | 216 |
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$3.3300 / $3.5700 | Buy Now |
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AS4C16M16SA-6TCN
Alliance Memory Inc
Buy Now
Datasheet
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Compare Parts:
AS4C16M16SA-6TCN
Alliance Memory Inc
Synchronous DRAM, 16MX16, 5ns, CMOS, PDSO54, 0.400 INCH, HALOGEN FREE AND ROHS COMPLIANT, PLASTIC, TSOP2-54
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Rohs Code | Yes | |
Part Life Cycle Code | Active | |
Ihs Manufacturer | ALLIANCE MEMORY INC | |
Package Description | TSOP2-54 | |
Reach Compliance Code | compliant | |
ECCN Code | EAR99 | |
HTS Code | 8542.32.00.24 | |
Factory Lead Time | 8 Weeks | |
Samacsys Manufacturer | Alliance Memory | |
Access Mode | FOUR BANK PAGE BURST | |
Access Time-Max | 5 ns | |
Additional Feature | AUTO/SELF REFRESH | |
Clock Frequency-Max (fCLK) | 166 MHz | |
I/O Type | COMMON | |
Interleaved Burst Length | 1,2,4,8 | |
JESD-30 Code | R-PDSO-G54 | |
JESD-609 Code | e3 | |
Length | 22.22 mm | |
Memory Density | 268435456 bit | |
Memory IC Type | SYNCHRONOUS DRAM | |
Memory Width | 16 | |
Moisture Sensitivity Level | 3 | |
Number of Functions | 1 | |
Number of Ports | 1 | |
Number of Terminals | 54 | |
Number of Words | 16777216 words | |
Number of Words Code | 16000000 | |
Operating Mode | SYNCHRONOUS | |
Operating Temperature-Max | 70 °C | |
Operating Temperature-Min | ||
Organization | 16MX16 | |
Package Body Material | PLASTIC/EPOXY | |
Package Code | TSOP2 | |
Package Equivalence Code | TSOP54,.46,32 | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE, THIN PROFILE | |
Peak Reflow Temperature (Cel) | 260 | |
Refresh Cycles | 8192 | |
Seated Height-Max | 1.2 mm | |
Self Refresh | YES | |
Sequential Burst Length | 1,2,4,8,FP | |
Standby Current-Max | 0.025 A | |
Supply Current-Max | 0.06 mA | |
Supply Voltage-Max (Vsup) | 3.6 V | |
Supply Voltage-Min (Vsup) | 3 V | |
Supply Voltage-Nom (Vsup) | 3.3 V | |
Surface Mount | YES | |
Technology | CMOS | |
Temperature Grade | COMMERCIAL | |
Terminal Finish | TIN | |
Terminal Form | GULL WING | |
Terminal Pitch | 0.8 mm | |
Terminal Position | DUAL | |
Time@Peak Reflow Temperature-Max (s) | 40 | |
Width | 10.16 mm |
This table gives cross-reference parts and alternative options found for AS4C16M16SA-6TCN. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of AS4C16M16SA-6TCN, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
---|---|---|---|
K4S561632C-TL75 | Synchronous DRAM, 16MX16, 5.4ns, CMOS, PDSO54, 0.400 X 0.875 INCH, 0.80 MM PITCH, TSOP2-54 | Samsung Semiconductor | AS4C16M16SA-6TCN vs K4S561632C-TL75 |
W982516CH-6 | Synchronous DRAM, 16MX16, 5.4ns, CMOS, PDSO54, 0.400 INCH, 0.80 MM PITCH, TSOP2-54 | Winbond Electronics Corp | AS4C16M16SA-6TCN vs W982516CH-6 |
IS42SM16160D-6TL | Synchronous DRAM, 16MX16, 5.4ns, CMOS, PDSO54, LEAD FREE, PLASTIC, TSOP2-54 | Integrated Silicon Solution Inc | AS4C16M16SA-6TCN vs IS42SM16160D-6TL |
M12L2561616A-6TVG2S | Synchronous DRAM, 16MX16, 5.4ns, CMOS, PDSO54, TSOP2-54 | Elite Semiconductor Memory Technology Inc | AS4C16M16SA-6TCN vs M12L2561616A-6TVG2S |
K4S561632J-UL75 | Synchronous DRAM, 16MX16, 5.4ns, CMOS, PDSO54, | Samsung Semiconductor | AS4C16M16SA-6TCN vs K4S561632J-UL75 |
K4S561632B-TL750 | Synchronous DRAM, 16MX16, 5.4ns, CMOS, PDSO54, 0.400 X 0.875 INCH, 0.80 MM PITCH, TSOP2-54 | Samsung Semiconductor | AS4C16M16SA-6TCN vs K4S561632B-TL750 |
V54C3256164VHUI6 | Synchronous DRAM, 16MX16, 5.4ns, CMOS, PDSO54, 0.400 INCH, GREEN, PLASTIC, TSOP2-54 | ProMOS Technologies Inc | AS4C16M16SA-6TCN vs V54C3256164VHUI6 |
IS42S16160C-75TLI | Synchronous DRAM, 16MX16, 5.4ns, CMOS, PDSO54, 0.400 INCH, 0.80 MM PITCH, LEAD FREE, TSOP2-54 | Integrated Silicon Solution Inc | AS4C16M16SA-6TCN vs IS42S16160C-75TLI |
HY57V561620BST-7 | Synchronous DRAM, 16MX16, 5.4ns, CMOS, PDSO54, 0.400 X 0.875 INCH, 0.80 MM PITCH, TSOP2-54 | SK Hynix Inc | AS4C16M16SA-6TCN vs HY57V561620BST-7 |
MT48LC16M16A2P-75 | Synchronous DRAM, 16MX16, 5.4ns, CMOS, PDSO54, 0.400 INCH, LEAD FREE, PLASTIC, TSOP2-54 | Micron Technology Inc | AS4C16M16SA-6TCN vs MT48LC16M16A2P-75 |