Datasheets
CM50DU-24H by:

Insulated Gate Bipolar Transistor, 50A I(C), 1200V V(BR)CES, N-Channel,

Part Details for CM50DU-24H by Powerex Power Semiconductors

Overview of CM50DU-24H by Powerex Power Semiconductors

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Part Details for CM50DU-24H

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CM50DU-24H Part Data Attributes

CM50DU-24H Powerex Power Semiconductors
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CM50DU-24H Powerex Power Semiconductors Insulated Gate Bipolar Transistor, 50A I(C), 1200V V(BR)CES, N-Channel,
Part Life Cycle Code Transferred
Ihs Manufacturer POWEREX INC
Package Description FLANGE MOUNT, R-XUFM-X7
Reach Compliance Code unknown
ECCN Code EAR99
Case Connection ISOLATED
Collector Current-Max (IC) 50 A
Collector-Emitter Voltage-Max 1200 V
Configuration SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE
Gate-Emitter Voltage-Max 20 V
JESD-30 Code R-XUFM-X7
Number of Elements 2
Number of Terminals 7
Operating Temperature-Max 150 °C
Package Body Material UNSPECIFIED
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 400 W
Qualification Status Not Qualified
Surface Mount NO
Terminal Form UNSPECIFIED
Terminal Position UPPER
Transistor Application MOTOR CONTROL
Transistor Element Material SILICON
Turn-off Time-Nom (toff) 500 ns
Turn-on Time-Nom (ton) 80 ns
VCEsat-Max 3.7 V

Alternate Parts for CM50DU-24H

This table gives cross-reference parts and alternative options found for CM50DU-24H. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of CM50DU-24H, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
MG75Q2YS40 TRANSISTOR 75 A, 1200 V, N-CHANNEL IGBT, 2-94D1A, 7 PIN, Insulated Gate BIP Transistor Toshiba America Electronic Components CM50DU-24H vs MG75Q2YS40
MG50Q2YS91 TRANSISTOR 50 A, 1200 V, N-CHANNEL IGBT, Insulated Gate BIP Transistor Toshiba America Electronic Components CM50DU-24H vs MG50Q2YS91
BSM50GB120DN2 Insulated Gate Bipolar Transistor, 78A I(C), 1200V V(BR)CES, N-Channel, Siemens CM50DU-24H vs BSM50GB120DN2
MG50Q2YS50 TRANSISTOR 78 A, 1200 V, N-CHANNEL IGBT, 2-94D4A, 7 PIN, Insulated Gate BIP Transistor Toshiba America Electronic Components CM50DU-24H vs MG50Q2YS50
CM50DU-24F Insulated Gate Bipolar Transistor, 50A I(C), 1200V V(BR)CES, N-Channel, Mitsubishi Electric CM50DU-24H vs CM50DU-24F
2MBI75F-120 Insulated Gate Bipolar Transistor, 75A I(C), 1200V V(BR)CES, N-Channel, M216, 7 PIN Fuji Electric Co Ltd CM50DU-24H vs 2MBI75F-120
2MBI75N-120 Insulated Gate Bipolar Transistor, 75A I(C), 1200V V(BR)CES, N-Channel, MODULE-7 Fuji Electric Co Ltd CM50DU-24H vs 2MBI75N-120
MG75Q2YS42 TRANSISTOR 75 A, 1200 V, N-CHANNEL IGBT, 2-108A2A, 7 PIN, Insulated Gate BIP Transistor Toshiba America Electronic Components CM50DU-24H vs MG75Q2YS42
BSM75GB120DN2 Insulated Gate Bipolar Transistor, 105A I(C), 1200V V(BR)CES, N-Channel, Siemens CM50DU-24H vs BSM75GB120DN2
MG25Q2YS91 TRANSISTOR 25 A, 1200 V, N-CHANNEL IGBT, Insulated Gate BIP Transistor Toshiba America Electronic Components CM50DU-24H vs MG25Q2YS91

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