| Part Number | Manufacturer | Composite Price | Description | Compare |
|---|---|---|---|---|
| CSD17313Q2T | Texas Instruments | $0.3002 | Power Field-Effect Transistor, 5A I(D), 30V, 0.042ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | CSD17313Q2 vs CSD17313Q2T |
Part Details for CSD17313Q2 by Texas Instruments
Results Overview of CSD17313Q2 by Texas Instruments
- Distributor Offerings: (26 listings)
- Number of FFF Equivalents: (1 replacement)
- Tariff Estimator: (Available) NEW
- Number of Functional Equivalents: (2 options)
- CAD Models: (Available)
- Part Data Attributes: (Available)
- Reference Designs: (Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
CSD17313Q2 Information
CSD17313Q2 by Texas Instruments is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for CSD17313Q2
| Part # | Distributor | Description | Stock | Price | Buy | |
|---|---|---|---|---|---|---|
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DISTI #
29AH3828
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Newark | Mosfet, N Ch, 30V, 5A, Son-6, |Texas Instruments CSD17313Q2 RoHS: Compliant Min Qty: 5 Package Multiple: 1 Date Code: 0 Container: Cut Tape | 1140 |
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$0.2180 / $0.7960 | Buy Now |
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DISTI #
29AH3828RL
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Newark | Mosfet, N Ch, 30V, 5A, Son-6, |Texas Instruments CSD17313Q2 RoHS: Compliant Min Qty: 100 Package Multiple: 1 Date Code: 0 Container: Tape & Reel | 1140 |
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$0.2180 / $0.3250 | Buy Now |
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DISTI #
296-27233-1-ND
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DigiKey | MOSFET N-CH 30V 5A 6WSON Min Qty: 1 Container: Cut Tape |
12281 Cut Tape |
|
$0.2436 / $0.8000 | Buy Now |
|
DISTI #
296-27233-6-ND
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DigiKey | MOSFET N-CH 30V 5A 6WSON Min Qty: 1 Container: Digi-Reel |
12281 Digi-Reel® |
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$0.2436 / $0.8000 | Buy Now |
|
DISTI #
296-27233-2-ND
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DigiKey | MOSFET N-CH 30V 5A 6WSON Min Qty: 3000 Container: Tape & Reel |
12281 Tape & Reel |
|
$0.1640 / $0.1878 | Buy Now |
|
DISTI #
P02:6590_15779266
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Arrow Electronics | Trans MOSFET N-CH Si 30V 7.3A 6-Pin WSON EP T/R RoHS: Compliant Min Qty: 10 Package Multiple: 1 Date Code: 2228 Container: Cut Strips | Asia - 1165 |
|
$0.1507 / $0.3390 | Buy Now |
|
DISTI #
V72:2272_07248766
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Arrow Electronics | Trans MOSFET N-CH Si 30V 7.3A 6-Pin WSON EP T/R COO: Malaysia RoHS: Compliant Min Qty: 1 Package Multiple: 1 Lead time: 16 Weeks Date Code: 2228 Container: Cut Strips | Americas - 550 |
|
$0.1512 / $0.5991 | Buy Now |
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DISTI #
595-CSD17313Q2
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Mouser Electronics | MOSFETs 30V N Channel NexFET Power MOSFET A 595- A 595-CSD17313Q2T RoHS: Compliant | 16710 |
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$0.1530 / $0.8000 | Buy Now |
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DISTI #
93862089
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Verical | Trans MOSFET N-CH Si 30V 7.3A 6-Pin WSON EP T/R RoHS: Compliant Min Qty: 10 Package Multiple: 1 Date Code: 2228 | Americas - 1165 |
|
$0.1507 / $0.3390 | Buy Now |
|
DISTI #
63258680
|
Verical | Trans MOSFET N-CH Si 30V 7.3A 6-Pin WSON EP T/R RoHS: Compliant Min Qty: 41 Package Multiple: 1 Date Code: 2228 | Americas - 550 |
|
$0.1512 / $0.3312 | Buy Now |
US Tariff Estimator: CSD17313Q2 by Texas Instruments
Calculations from this tool are estimations only for imports into the United States. Please refer to the distributor or manufacturer and reference official US government sources and authorities to verify any final purchase costs.
CSD17313Q2 CAD Models
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CSD17313Q2 Part Data Attributes
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CSD17313Q2
Texas Instruments
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Datasheet
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CSD17313Q2
Texas Instruments
Power Field-Effect Transistor, 5A I(D), 30V, 0.042ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
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| Pbfree Code | Yes | |
| Rohs Code | Yes | |
| Part Life Cycle Code | Active | |
| Pin Count | 8 | |
| ECCN Code | EAR99 | |
| HTS Code | 8541.29.00.95 | |
| Avalanche Energy Rating (Eas) | 18 Mj | |
| Case Connection | Drain | |
| Configuration | Single With Built-In Diode | |
| DS Breakdown Voltage-Min | 30 V | |
| Drain Current-Max (ID) | 5 A | |
| Drain-source On Resistance-Max | 0.042 Ω | |
| FET Technology | Metal-Oxide Semiconductor | |
| Feedback Cap-Max (Crss) | 17 Pf | |
| JESD-30 Code | R-PDSO-N8 | |
| JESD-609 Code | e4 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Terminals | 6 | |
| Operating Mode | Enhancement Mode | |
| Operating Temperature-Max | 150 °C | |
| Operating Temperature-Min | -55 °C | |
| Package Body Material | Plastic/Epoxy | |
| Package Shape | Rectangular | |
| Package Style | Small Outline | |
| Peak Reflow Temperature (Cel) | 260 | |
| Polarity/Channel Type | N-Channel | |
| Power Dissipation-Max (Abs) | 17 W | |
| Pulsed Drain Current-Max (IDM) | 20 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | Yes | |
| Terminal Finish | Nickel/Palladium/Gold (Ni/Pd/Au) | |
| Terminal Form | No Lead | |
| Terminal Position | Dual | |
| Time@Peak Reflow Temperature-Max (s) | 30 | |
| Transistor Application | Switching | |
| Transistor Element Material | Silicon |
Alternate Parts for CSD17313Q2
This table gives cross-reference parts and alternative options found for CSD17313Q2. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of CSD17313Q2, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Resources and Additional Insights for CSD17313Q2
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CSD17313Q2 Frequently Asked Questions (FAQ)
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The maximum operating temperature range for the CSD17313Q2 is -40°C to 150°C.
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To ensure proper biasing, connect the gate-source voltage (VGS) to a voltage source that is within the recommended operating range (typically 1.5V to 3.5V) and ensure the drain-source voltage (VDS) is within the recommended operating range (typically 1.5V to 12V).
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To minimize parasitic inductance, use a compact PCB layout with short, wide traces for the drain, source, and gate connections. Avoid using vias or narrow traces, and keep the component placement close to the PCB surface.
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To protect the CSD17313Q2 from ESD, use ESD-sensitive handling procedures, such as wearing an anti-static wrist strap or using an anti-static mat. Ensure the PCB is properly grounded, and use ESD-protection devices, such as TVS diodes, in the circuit design.
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The recommended gate drive voltage for the CSD17313Q2 is typically 5V to 10V, depending on the specific application requirements. However, it's essential to consult the datasheet and application notes for specific guidance.