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CSD18532KCS by:
Texas Instruments

Power Field-Effect Transistor, 100A I(D), 60V, 0.0053ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220

Part Details for CSD18532KCS by Texas Instruments

Results Overview of CSD18532KCS by Texas Instruments

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CSD18532KCS Information

CSD18532KCS by Texas Instruments is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.

A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.

Price & Stock for CSD18532KCS

Part # Distributor Description Stock Price Buy
DISTI # 296-34941-5-ND
DigiKey MOSFET N-CH 60V 100A TO220-3 Min Qty: 1 Container: Tube 1216
Tube
  • 1 $3.1000
  • 10 $2.0100
  • 50 $1.5384
  • 100 $1.3864
  • 500 $1.1197
$1.1197 / $3.1000 Buy Now
DISTI # 595-CSD18532KCS
Mouser Electronics MOSFETs 60-V N-Chanel NxFT P wr MOSFETs RoHS: Compliant 1304
  • 1 $3.1000
  • 10 $1.5400
  • 100 $1.3100
  • 500 $1.1100
  • 1,000 $1.0900
  • 2,500 $1.0200
  • 5,000 $1.0100
$1.0100 / $3.1000 Buy Now
Quest Components 100A, 60V, 0.0053OHM, N-CHANNEL, SI, POWER, MOSFET, TO-220 6
  • 1 $1.7345
  • 4 $1.5957
$1.5957 / $1.7345 Buy Now
DISTI # CSD18532KCS
TME Transistor: N-MOSFET, unipolar, 60V, 100A, 250W, TO220-3 Min Qty: 1 209
  • 1 $2.4600
  • 10 $1.7800
  • 50 $1.3700
  • 100 $1.3300
$1.3300 / $2.4600 Buy Now

US Tariff Estimator: CSD18532KCS by Texas Instruments

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CSD18532KCS Part Data Attributes

CSD18532KCS Texas Instruments
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CSD18532KCS Texas Instruments Power Field-Effect Transistor, 100A I(D), 60V, 0.0053ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220
Pbfree Code Yes
Rohs Code Yes
Part Life Cycle Code Active
ECCN Code EAR99
HTS Code 8541.29.00.95
Additional Feature Avalanche Rated, Logic Level Compatible
Avalanche Energy Rating (Eas) 281 Mj
Case Connection Drain
Configuration Single With Built-In Diode
DS Breakdown Voltage-Min 60 V
Drain Current-Max (ID) 100 A
Drain-source On Resistance-Max 0.0053 Ω
FET Technology Metal-Oxide Semiconductor
Feedback Cap-Max (Crss) 14 Pf
JEDEC-95 Code TO-220
JESD-30 Code R-PSFM-T3
JESD-609 Code e3
Number of Elements 1
Number of Terminals 3
Operating Mode Enhancement Mode
Operating Temperature-Max 175 °C
Operating Temperature-Min -55 °C
Package Body Material Plastic/Epoxy
Package Shape Rectangular
Package Style Flange Mount
Polarity/Channel Type N-Channel
Power Dissipation-Max (Abs) 216 W
Pulsed Drain Current-Max (IDM) 400 A
Surface Mount No
Terminal Finish Matte Tin (Sn) - Annealed
Terminal Form Through-Hole
Terminal Position Single
Transistor Application Switching
Transistor Element Material Silicon
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Resources and Additional Insights for CSD18532KCS

Reference Designs related to CSD18532KCS

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