Datasheets
NE722S01 by:

RF Small Signal Field-Effect Transistor, 1-Element, X Band, Gallium Arsenide, N-Channel, Metal Semiconductor FET, S01, 4 PIN

Part Details for NE722S01 by NEC Compound Semiconductor Devices Ltd

Overview of NE722S01 by NEC Compound Semiconductor Devices Ltd

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Applications Industrial Automation Energy and Power Systems Renewable Energy

Part Details for NE722S01

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NE722S01 Part Data Attributes

NE722S01 NEC Compound Semiconductor Devices Ltd
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NE722S01 NEC Compound Semiconductor Devices Ltd RF Small Signal Field-Effect Transistor, 1-Element, X Band, Gallium Arsenide, N-Channel, Metal Semiconductor FET, S01, 4 PIN
Rohs Code No
Part Life Cycle Code Obsolete
Ihs Manufacturer NEC COMPOUND SEMICONDUCTOR DEVICES LTD
Package Description S01, 4 PIN
Reach Compliance Code compliant
ECCN Code EAR99
Additional Feature LOW NOISE
Configuration SINGLE
DS Breakdown Voltage-Min 4 V
Drain Current-Max (ID) 0.04 A
FET Technology METAL SEMICONDUCTOR
Highest Frequency Band X BAND
JESD-30 Code X-PXMW-G4
JESD-609 Code e0
Number of Elements 1
Number of Terminals 4
Operating Mode DEPLETION MODE
Package Body Material PLASTIC/EPOXY
Package Shape UNSPECIFIED
Package Style MICROWAVE
Polarity/Channel Type N-CHANNEL
Qualification Status Not Qualified
Surface Mount YES
Terminal Finish TIN LEAD
Terminal Form GULL WING
Terminal Position UNSPECIFIED
Transistor Application AMPLIFIER
Transistor Element Material GALLIUM ARSENIDE

Alternate Parts for NE722S01

This table gives cross-reference parts and alternative options found for NE722S01. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of NE722S01, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
NE722S01 RF Small Signal Field-Effect Transistor, 1-Element, X Band, Gallium Arsenide, N-Channel, Metal Semiconductor FET, S01, 4 PIN NEC Electronics Group NE722S01 vs NE722S01
Part Number Description Manufacturer Compare
FHC40LG RF Small Signal Field-Effect Transistor, 1-Element, X Band, Gallium Arsenide, N-Channel, High Electron Mobility FET, HERMETIC SEALED, METAL CERAMIC, CASE LG, 4 PIN FUJITSU Limited NE722S01 vs FHC40LG
NE425S01-T1B RF Small Signal Field-Effect Transistor, 1-Element, KU Band, Silicon, N-Channel, Hetero-junction FET NEC Electronics Group NE722S01 vs NE425S01-T1B
FHX35LG RF Small Signal Field-Effect Transistor, HERMETIC SEALED, METAL CERAMIC PACKAGE-4 FUJITSU Semiconductor Limited NE722S01 vs FHX35LG
FHX14LG RF Small Signal Field-Effect Transistor, 1-Element, KU Band, Gallium Arsenide, N-Channel, High Electron Mobility FET, HERMETIC SEALED, METAL CERAMIC, CASE LG, 4 PIN FUJITSU Limited NE722S01 vs FHX14LG
NE76118-M RF Small Signal Field-Effect Transistor, 1-Element, S Band, Gallium Arsenide, N-Channel, Metal Semiconductor FET, SUPER MINIMOLD PACKAGE-4 NEC Electronics Group NE722S01 vs NE76118-M
CFY30 RF Small Signal Field-Effect Transistor, 1-Element, C Band, Gallium Arsenide, N-Channel, Junction FET Siemens NE722S01 vs CFY30
NE76038 RF Small Signal Field-Effect Transistor, 1-Element, KU Band, Gallium Arsenide, N-Channel, Metal Semiconductor FET California Eastern Laboratories (CEL) NE722S01 vs NE76038
CFH120-08 RF Small Signal Field-Effect Transistor, 1-Element, K Band, Silicon, N-Channel, High Electron Mobility FET, PLASTIC, MW-4, 4 PIN TriQuint Semiconductor NE722S01 vs CFH120-08
NE76118-T2K RF Small Signal Field-Effect Transistor, 1-Element, S Band, Gallium Arsenide, N-Channel, Metal Semiconductor FET, SUPER MINIMOLD PACKAGE-4 NEC Electronics Group NE722S01 vs NE76118-T2K
NE42484A RF Small Signal Field-Effect Transistor, 1-Element, KU Band, Gallium Arsenide, NEC Electronics America Inc NE722S01 vs NE42484A

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