Part Details for H5DU5162EFR-J3J by SK Hynix Inc
Overview of H5DU5162EFR-J3J by SK Hynix Inc
- Distributor Offerings: (0 listings)
- Number of FFF Equivalents: (10 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Consumer Electronics
Internet of Things (IoT)
Computing and Data Storage
Entertainment and Gaming
Part Details for H5DU5162EFR-J3J
H5DU5162EFR-J3J CAD Models
H5DU5162EFR-J3J Part Data Attributes
|
|
H5DU5162EFR-J3J
SK Hynix Inc
Buy Now
Datasheet
|
Compare Parts:
H5DU5162EFR-J3J
SK Hynix Inc
DDR DRAM, 32MX16, 0.7ns, CMOS, PBGA60, ROHS COMPLIANT, FBGA-60
|
| Rohs Code | Yes | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | SK HYNIX INC | |
| Part Package Code | BGA | |
| Package Description | VBGA, BGA60,9X12,40/32 | |
| Pin Count | 60 | |
| Reach Compliance Code | unknown | |
| ECCN Code | EAR99 | |
| HTS Code | 8542.32.00.28 | |
| Access Mode | FOUR BANK PAGE BURST | |
| Access Time-Max | 0.7 ns | |
| Additional Feature | AUTO/SELF REFRESH | |
| Clock Frequency-Max (fCLK) | 166 MHz | |
| I/O Type | COMMON | |
| Interleaved Burst Length | 2,4,8 | |
| JESD-30 Code | R-PBGA-B60 | |
| JESD-609 Code | e1 | |
| Length | 12 mm | |
| Memory Density | 536870912 bit | |
| Memory IC Type | DDR1 DRAM | |
| Memory Width | 16 | |
| Number of Functions | 1 | |
| Number of Ports | 1 | |
| Number of Terminals | 60 | |
| Number of Words | 33554432 words | |
| Number of Words Code | 32000000 | |
| Operating Mode | SYNCHRONOUS | |
| Operating Temperature-Max | 85 °C | |
| Operating Temperature-Min | -40 °C | |
| Organization | 32MX16 | |
| Output Characteristics | 3-STATE | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Code | VBGA | |
| Package Equivalence Code | BGA60,9X12,40/32 | |
| Package Shape | RECTANGULAR | |
| Package Style | GRID ARRAY, VERY THIN PROFILE | |
| Peak Reflow Temperature (Cel) | 260 | |
| Qualification Status | Not Qualified | |
| Refresh Cycles | 8192 | |
| Seated Height-Max | 1 mm | |
| Self Refresh | YES | |
| Sequential Burst Length | 2,4,8 | |
| Standby Current-Max | 0.005 A | |
| Supply Current-Max | 0.24 mA | |
| Supply Voltage-Max (Vsup) | 2.7 V | |
| Supply Voltage-Min (Vsup) | 2.3 V | |
| Supply Voltage-Nom (Vsup) | 2.5 V | |
| Surface Mount | YES | |
| Technology | CMOS | |
| Temperature Grade | INDUSTRIAL | |
| Terminal Finish | Tin/Silver/Copper (Sn/Ag/Cu) | |
| Terminal Form | BALL | |
| Terminal Pitch | 1 mm | |
| Terminal Position | BOTTOM | |
| Time@Peak Reflow Temperature-Max (s) | 20 | |
| Width | 8 mm |
Alternate Parts for H5DU5162EFR-J3J
This table gives cross-reference parts and alternative options found for H5DU5162EFR-J3J. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of H5DU5162EFR-J3J, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| MT46V32M16FN-6IT:F | DDR DRAM, 32MX16, 0.7ns, CMOS, PBGA60, 10 X 12.50 MM, PLASTIC, FBGA-60 | Micron Technology Inc | H5DU5162EFR-J3J vs MT46V32M16FN-6IT:F |
| MT46V32M16FN-6LIT:D | DDR DRAM, 32MX16, 0.7ns, CMOS, PBGA60 | Micron Technology Inc | H5DU5162EFR-J3J vs MT46V32M16FN-6LIT:D |
| K4H511638C-ZPB30 | DDR DRAM, 32MX16, 0.7ns, CMOS, PBGA60, ROHS COMPLIANT, FBGA-60 | Samsung Semiconductor | H5DU5162EFR-J3J vs K4H511638C-ZPB30 |
| NT5DS32M16BF-6KI | DDR DRAM, 32MX16, 0.7ns, CMOS, PBGA60, 1 MM PITCH, WBGA-60 | Nanya Technology Corporation | H5DU5162EFR-J3J vs NT5DS32M16BF-6KI |
| K4H511638D-ZPB3T | DDR DRAM, 32MX16, 0.7ns, CMOS, PBGA60 | Samsung Semiconductor | H5DU5162EFR-J3J vs K4H511638D-ZPB3T |
| MT46V32M16BN-6LIT:F | DDR DRAM, 32MX16, 0.7ns, CMOS, PBGA60, 10 X 12.50 MM, LEAD FREE, PLASTIC, FBGA-60 | Micron Technology Inc | H5DU5162EFR-J3J vs MT46V32M16BN-6LIT:F |
| MT46V32M16BN-6IT:F | DDR DRAM, 32MX16, 0.7ns, CMOS, PBGA60, 10 X 12.50 MM, LEAD FREE, PLASTIC, FBGA-60 | Micron Technology Inc | H5DU5162EFR-J3J vs MT46V32M16BN-6IT:F |
| MT46V32M16BN-6LIT:D | DDR DRAM, 32MX16, 0.7ns, CMOS, PBGA60 | Micron Technology Inc | H5DU5162EFR-J3J vs MT46V32M16BN-6LIT:D |
| K4H511638D-ZPB30 | DDR DRAM, 32MX16, 0.7ns, CMOS, PBGA60, ROHS COMPLIANT, FBGA-60 | Samsung Semiconductor | H5DU5162EFR-J3J vs K4H511638D-ZPB30 |
| K4H511638J-BIB3T | DDR DRAM, 32MX16, 0.7ns, CMOS, PBGA60 | Samsung Semiconductor | H5DU5162EFR-J3J vs K4H511638J-BIB3T |