Part Details for MT46V32M16BN-6IT:F by Micron Technology Inc
Overview of MT46V32M16BN-6IT:F by Micron Technology Inc
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- Number of FFF Equivalents:
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- Number of Functional Equivalents:
- Part Data Attributes
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Price & Stock for MT46V32M16BN-6IT:F
| Part # | Distributor | Description | Stock | Price | Buy | |
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Quest Components | DDR DRAM, 32MX16, 0.7NS, CMOS, PBGA60 | 328 |
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$13.2258 / $19.8387 | Buy Now |
Part Details for MT46V32M16BN-6IT:F
MT46V32M16BN-6IT:F CAD Models
MT46V32M16BN-6IT:F Part Data Attributes
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MT46V32M16BN-6IT:F
Micron Technology Inc
Buy Now
Datasheet
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MT46V32M16BN-6IT:F
Micron Technology Inc
DDR DRAM, 32MX16, 0.7ns, CMOS, PBGA60, 10 X 12.50 MM, LEAD FREE, PLASTIC, FBGA-60
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| Rohs Code | Yes | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | MICRON TECHNOLOGY INC | |
| Part Package Code | BGA | |
| Package Description | TBGA, BGA60,9X12,40/32 | |
| Pin Count | 60 | |
| Reach Compliance Code | unknown | |
| ECCN Code | EAR99 | |
| HTS Code | 8542.32.00.28 | |
| Access Mode | FOUR BANK PAGE BURST | |
| Access Time-Max | 0.7 ns | |
| Additional Feature | AUTO/SELF REFRESH | |
| Clock Frequency-Max (fCLK) | 166 MHz | |
| I/O Type | COMMON | |
| Interleaved Burst Length | 2,4,8 | |
| JESD-30 Code | R-PBGA-B60 | |
| JESD-609 Code | e1 | |
| Length | 12.5 mm | |
| Memory Density | 536870912 bit | |
| Memory IC Type | DDR1 DRAM | |
| Memory Width | 16 | |
| Number of Functions | 1 | |
| Number of Ports | 1 | |
| Number of Terminals | 60 | |
| Number of Words | 33554432 words | |
| Number of Words Code | 32000000 | |
| Operating Mode | SYNCHRONOUS | |
| Operating Temperature-Max | 85 °C | |
| Operating Temperature-Min | -40 °C | |
| Organization | 32MX16 | |
| Output Characteristics | 3-STATE | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Code | TBGA | |
| Package Equivalence Code | BGA60,9X12,40/32 | |
| Package Shape | RECTANGULAR | |
| Package Style | GRID ARRAY, THIN PROFILE | |
| Qualification Status | Not Qualified | |
| Refresh Cycles | 8192 | |
| Seated Height-Max | 1.2 mm | |
| Self Refresh | YES | |
| Sequential Burst Length | 2,4,8 | |
| Standby Current-Max | 0.005 A | |
| Supply Current-Max | 0.405 mA | |
| Supply Voltage-Max (Vsup) | 2.7 V | |
| Supply Voltage-Min (Vsup) | 2.3 V | |
| Supply Voltage-Nom (Vsup) | 2.5 V | |
| Surface Mount | YES | |
| Technology | CMOS | |
| Temperature Grade | INDUSTRIAL | |
| Terminal Finish | TIN SILVER COPPER | |
| Terminal Form | BALL | |
| Terminal Pitch | 1 mm | |
| Terminal Position | BOTTOM | |
| Width | 10 mm |
Alternate Parts for MT46V32M16BN-6IT:F
This table gives cross-reference parts and alternative options found for MT46V32M16BN-6IT:F. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of MT46V32M16BN-6IT:F, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| K4H511638D-ZPB30 | DDR DRAM, 32MX16, 0.7ns, CMOS, PBGA60, ROHS COMPLIANT, FBGA-60 | Samsung Semiconductor | MT46V32M16BN-6IT:F vs K4H511638D-ZPB30 |
| K4H511638C-ZIB30 | DDR DRAM, 32MX16, 0.7ns, CMOS, PBGA60, ROHS COMPLIANT, FBGA-60 | Samsung Semiconductor | MT46V32M16BN-6IT:F vs K4H511638C-ZIB30 |
| NT5DS32M16BF-6KI | DDR DRAM, 32MX16, 0.7ns, CMOS, PBGA60, 1 MM PITCH, WBGA-60 | Nanya Technology Corporation | MT46V32M16BN-6IT:F vs NT5DS32M16BF-6KI |
| H5DU5162EFR-J3I | DDR DRAM, 32MX16, 0.7ns, CMOS, PBGA60, ROHS COMPLIANT, FBGA-60 | SK Hynix Inc | MT46V32M16BN-6IT:F vs H5DU5162EFR-J3I |
| MT46V32M16FN-6LIT:D | DDR DRAM, 32MX16, 0.7ns, CMOS, PBGA60 | Micron Technology Inc | MT46V32M16BN-6IT:F vs MT46V32M16FN-6LIT:D |
| K4H511638J-BPB30 | DDR DRAM, 32MX16, 0.7ns, CMOS, PBGA60, HALOGEN FREE AND ROHS COMPLIANT, FBGA-60 | Samsung Semiconductor | MT46V32M16BN-6IT:F vs K4H511638J-BPB30 |
| MT46V32M16FN-6IT:D | DDR DRAM, 32MX16, 0.7ns, CMOS, PBGA60 | Micron Technology Inc | MT46V32M16BN-6IT:F vs MT46V32M16FN-6IT:D |
| K4H511638C-ZPB30 | DDR DRAM, 32MX16, 0.7ns, CMOS, PBGA60, ROHS COMPLIANT, FBGA-60 | Samsung Semiconductor | MT46V32M16BN-6IT:F vs K4H511638C-ZPB30 |
| MT46V32M16FN-6IT:F | DDR DRAM, 32MX16, 0.7ns, CMOS, PBGA60, 10 X 12.50 MM, PLASTIC, FBGA-60 | Micron Technology Inc | MT46V32M16BN-6IT:F vs MT46V32M16FN-6IT:F |
| MT46V32M16BN-6LIT:F | DDR DRAM, 32MX16, 0.7ns, CMOS, PBGA60, 10 X 12.50 MM, LEAD FREE, PLASTIC, FBGA-60 | Micron Technology Inc | MT46V32M16BN-6IT:F vs MT46V32M16BN-6LIT:F |