Datasheets
HYB39S16160CT-10 by:

Synchronous DRAM, 1MX16, 7ns, CMOS, PDSO50, 0.400 INCH, 0.80 MM PITCH, PLASTIC, TSOP-50

Part Details for HYB39S16160CT-10 by Siemens

Overview of HYB39S16160CT-10 by Siemens

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Applications Consumer Electronics Computing and Data Storage

Part Details for HYB39S16160CT-10

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HYB39S16160CT-10 Part Data Attributes

HYB39S16160CT-10 Siemens
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HYB39S16160CT-10 Siemens Synchronous DRAM, 1MX16, 7ns, CMOS, PDSO50, 0.400 INCH, 0.80 MM PITCH, PLASTIC, TSOP-50
Part Life Cycle Code Transferred
Ihs Manufacturer SIEMENS A G
Part Package Code TSOP
Package Description ,
Pin Count 50
Reach Compliance Code unknown
ECCN Code EAR99
HTS Code 8542.32.00.02
Access Mode DUAL BANK PAGE BURST
Access Time-Max 7 ns
Additional Feature AUTO/SELF REFRESH
JESD-30 Code R-PDSO-G50
Memory Density 16777216 bit
Memory IC Type SYNCHRONOUS DRAM
Memory Width 16
Number of Functions 1
Number of Ports 1
Number of Terminals 50
Number of Words 1048576 words
Number of Words Code 1000000
Operating Mode SYNCHRONOUS
Operating Temperature-Max 70 °C
Operating Temperature-Min
Organization 1MX16
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Qualification Status Not Qualified
Self Refresh YES
Supply Voltage-Max (Vsup) 3.6 V
Supply Voltage-Min (Vsup) 3 V
Supply Voltage-Nom (Vsup) 3.3 V
Surface Mount YES
Technology CMOS
Temperature Grade COMMERCIAL
Terminal Form GULL WING
Terminal Position DUAL

Alternate Parts for HYB39S16160CT-10

This table gives cross-reference parts and alternative options found for HYB39S16160CT-10. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of HYB39S16160CT-10, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
HYB39S16160CT-10 Synchronous DRAM, 1MX16, 7ns, CMOS, PDSO50, 0.400 INCH, 0.80 MM PITCH, PLASTIC, TSOP2-50 Infineon Technologies AG HYB39S16160CT-10 vs HYB39S16160CT-10
HY57V161610DTC-15 Synchronous DRAM, 1MX16, 7ns, CMOS, PDSO50, 0.400 X 0.825 INCH, 0.80 MM PITCH, TSOP2-50 SK Hynix Inc HYB39S16160CT-10 vs HY57V161610DTC-15
KM416S1020CT-F10 Synchronous DRAM, 1MX16, 7ns, CMOS, PDSO50, 0.400 X 0.825 INCH, 0.80 MM PITCH, TSOP2-50 Samsung Semiconductor HYB39S16160CT-10 vs KM416S1020CT-F10
UPD4516161AG5-A10BL-9NF Synchronous DRAM, 1MX16, 7ns, MOS, PDSO50, 0.400 INCH, PLASTIC, TSOP2-50 NEC Electronics America Inc HYB39S16160CT-10 vs UPD4516161AG5-A10BL-9NF
UPD4516161AG5-A10B-9NF Synchronous DRAM, 1MX16, 7ns, MOS, PDSO50, 0.400 INCH, PLASTIC, TSOP2-50 NEC Electronics America Inc HYB39S16160CT-10 vs UPD4516161AG5-A10B-9NF
UPD4516161AG5-A10BL-9NF Synchronous DRAM, 1MX16, 7ns, MOS, PDSO50, 0.400 INCH, PLASTIC, TSOP2-50 Elpida Memory Inc HYB39S16160CT-10 vs UPD4516161AG5-A10BL-9NF
UPD4516161AG5-A10BL-9NF Synchronous DRAM, 1MX16, 7ns, MOS, PDSO50, 0.400 INCH, PLASTIC, TSOP2-50 NEC Electronics Group HYB39S16160CT-10 vs UPD4516161AG5-A10BL-9NF
HY57V161610DTC-10 Synchronous DRAM, 1MX16, 7ns, CMOS, PDSO50, 0.400 X 0.825 INCH, 0.80 MM PITCH, TSOP2-50 SK Hynix Inc HYB39S16160CT-10 vs HY57V161610DTC-10
Part Number Description Manufacturer Compare
HY57V161610BLTC-15 Synchronous DRAM, 1MX16, 9ns, CMOS, PDSO50, 0.400 X 0.825 INCH, 0.80 MM PITCH, TSOP2-50 SK Hynix Inc HYB39S16160CT-10 vs HY57V161610BLTC-15
IS45S16100A1-7TLA1 Synchronous DRAM, 1MX16, 6ns, CMOS, PDSO50, 0.400 INCH, LEAD FREE, TSOP2-50 Integrated Silicon Solution Inc HYB39S16160CT-10 vs IS45S16100A1-7TLA1
UPD4218160LG5-A70-7JF Fast Page DRAM, 1MX16, 70ns, CMOS, PDSO50, 0.400 INCH, PLASTIC, TSOP2-50 NEC Electronics Group HYB39S16160CT-10 vs UPD4218160LG5-A70-7JF
UPD4216160G5-60-7JF IC,DRAM,FAST PAGE,1MX16,CMOS,TSOP,44PIN,PLASTIC Renesas Electronics Corporation HYB39S16160CT-10 vs UPD4216160G5-60-7JF
MB811171622E-67FN 1M X 16 SYNCHRONOUS DRAM, 9 ns, PDSO50, 0.400 INCH, PLASTIC, TSOP2-50 FUJITSU Semiconductor Limited HYB39S16160CT-10 vs MB811171622E-67FN
UPD42S18160G5-80-7JF Fast Page DRAM, 1MX16, 80ns, CMOS, PDSO50, 0.400 INCH, PLASTIC, TSOP2-50 NEC Electronics America Inc HYB39S16160CT-10 vs UPD42S18160G5-80-7JF
K4S161622E-TC80 Synchronous DRAM, 1MX16, 6ns, CMOS, PDSO50, 0.400 X 0.825 INCH, 0.80 MM PITCH, TSOP2-50 Samsung Semiconductor HYB39S16160CT-10 vs K4S161622E-TC80
V54C316162VCT6 Synchronous DRAM, 1MX16, 5.5ns, CMOS, PDSO50, 0.400 INCH, PLASTIC, TSOP2-50 Mosel Vitelic Corporation HYB39S16160CT-10 vs V54C316162VCT6
SM2404T-7.5 Memory IC, 1MX16, CMOS, PDSO50, Ramtron International Corporation HYB39S16160CT-10 vs SM2404T-7.5
W981616AH-7 Synchronous DRAM, 1MX16, 5.5ns, CMOS, PDSO50, 0.400 INCH, TSOP2-50 Winbond Electronics Corp HYB39S16160CT-10 vs W981616AH-7

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