Part Details for HYB39S256160DT-7.5 by Infineon Technologies AG
Overview of HYB39S256160DT-7.5 by Infineon Technologies AG
- Distributor Offerings: (5 listings)
- Number of FFF Equivalents: (10 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Price & Stock for HYB39S256160DT-7.5
| Part # | Distributor | Description | Stock | Price | Buy | |
|---|---|---|---|---|---|---|
|
|
Bristol Electronics | 37 |
|
RFQ | ||
|
|
Bristol Electronics | 25 |
|
RFQ | ||
|
|
Quest Components | SDRAM, 16M x 16, 54 Pin, Plastic, TSOP | 80 |
|
$9.2500 / $15.0000 | Buy Now |
|
|
Quest Components | SDRAM, 16M x 16, 54 Pin, Plastic, TSOP | 20 |
|
$11.5600 / $13.0050 | Buy Now |
|
|
Quest Components | SDRAM, 16M x 16, 54 Pin, Plastic, TSOP | 4 |
|
$4.5000 / $9.0000 | Buy Now |
Part Details for HYB39S256160DT-7.5
HYB39S256160DT-7.5 CAD Models
HYB39S256160DT-7.5 Part Data Attributes
|
|
HYB39S256160DT-7.5
Infineon Technologies AG
Buy Now
Datasheet
|
Compare Parts:
HYB39S256160DT-7.5
Infineon Technologies AG
Synchronous DRAM, 16MX16, 5.4ns, CMOS, PDSO54, 0.400 INCH, PLASTIC, TSOP2-54
|
| Pbfree Code | No | |
| Rohs Code | No | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
| Part Package Code | TSOP2 | |
| Package Description | 0.400 INCH, PLASTIC, TSOP2-54 | |
| Pin Count | 54 | |
| Reach Compliance Code | not_compliant | |
| ECCN Code | EAR99 | |
| HTS Code | 8542.32.00.24 | |
| Access Mode | FOUR BANK PAGE BURST | |
| Access Time-Max | 5.4 ns | |
| Additional Feature | AUTO/SELF REFRESH | |
| Clock Frequency-Max (fCLK) | 133 MHz | |
| I/O Type | COMMON | |
| Interleaved Burst Length | 1,2,4,8 | |
| JESD-30 Code | R-PDSO-G54 | |
| JESD-609 Code | e0 | |
| Length | 22.22 mm | |
| Memory Density | 268435456 bit | |
| Memory IC Type | SYNCHRONOUS DRAM | |
| Memory Width | 16 | |
| Number of Functions | 1 | |
| Number of Ports | 1 | |
| Number of Terminals | 54 | |
| Number of Words | 16777216 words | |
| Number of Words Code | 16000000 | |
| Operating Mode | SYNCHRONOUS | |
| Operating Temperature-Max | 70 °C | |
| Operating Temperature-Min | ||
| Organization | 16MX16 | |
| Output Characteristics | 3-STATE | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Code | TSOP2 | |
| Package Equivalence Code | TSOP54,.46,32 | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE, THIN PROFILE | |
| Qualification Status | Not Qualified | |
| Refresh Cycles | 8192 | |
| Seated Height-Max | 1.2 mm | |
| Self Refresh | YES | |
| Sequential Burst Length | 1,2,4,8,FP | |
| Standby Current-Max | 0.002 A | |
| Supply Current-Max | 0.19 mA | |
| Supply Voltage-Max (Vsup) | 3.6 V | |
| Supply Voltage-Min (Vsup) | 3 V | |
| Supply Voltage-Nom (Vsup) | 3.3 V | |
| Surface Mount | YES | |
| Technology | CMOS | |
| Temperature Grade | COMMERCIAL | |
| Terminal Finish | TIN LEAD | |
| Terminal Form | GULL WING | |
| Terminal Pitch | 0.8 mm | |
| Terminal Position | DUAL | |
| Width | 10.16 mm |
Alternate Parts for HYB39S256160DT-7.5
This table gives cross-reference parts and alternative options found for HYB39S256160DT-7.5. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of HYB39S256160DT-7.5, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| K4S561632C-TL75 | Synchronous DRAM, 16MX16, 5.4ns, CMOS, PDSO54, 0.400 X 0.875 INCH, 0.80 MM PITCH, TSOP2-54 | Samsung Semiconductor | HYB39S256160DT-7.5 vs K4S561632C-TL75 |
| W982516CH-6 | Synchronous DRAM, 16MX16, 5.4ns, CMOS, PDSO54, 0.400 INCH, 0.80 MM PITCH, TSOP2-54 | Winbond Electronics Corp | HYB39S256160DT-7.5 vs W982516CH-6 |
| IS42SM16160D-6TL | Synchronous DRAM, 16MX16, 5.4ns, CMOS, PDSO54, LEAD FREE, PLASTIC, TSOP2-54 | Integrated Silicon Solution Inc | HYB39S256160DT-7.5 vs IS42SM16160D-6TL |
| M12L2561616A-6TVG2S | Synchronous DRAM, 16MX16, 5.4ns, CMOS, PDSO54, TSOP2-54 | Elite Semiconductor Memory Technology Inc | HYB39S256160DT-7.5 vs M12L2561616A-6TVG2S |
| K4S561632J-UL75 | Synchronous DRAM, 16MX16, 5.4ns, CMOS, PDSO54, | Samsung Semiconductor | HYB39S256160DT-7.5 vs K4S561632J-UL75 |
| K4S561632B-TL750 | Synchronous DRAM, 16MX16, 5.4ns, CMOS, PDSO54, 0.400 X 0.875 INCH, 0.80 MM PITCH, TSOP2-54 | Samsung Semiconductor | HYB39S256160DT-7.5 vs K4S561632B-TL750 |
| V54C3256164VHUI6 | Synchronous DRAM, 16MX16, 5.4ns, CMOS, PDSO54, 0.400 INCH, GREEN, PLASTIC, TSOP2-54 | ProMOS Technologies Inc | HYB39S256160DT-7.5 vs V54C3256164VHUI6 |
| IS42S16160C-75TLI | Synchronous DRAM, 16MX16, 5.4ns, CMOS, PDSO54, 0.400 INCH, 0.80 MM PITCH, LEAD FREE, TSOP2-54 | Integrated Silicon Solution Inc | HYB39S256160DT-7.5 vs IS42S16160C-75TLI |
| HY57V561620BST-7 | Synchronous DRAM, 16MX16, 5.4ns, CMOS, PDSO54, 0.400 X 0.875 INCH, 0.80 MM PITCH, TSOP2-54 | SK Hynix Inc | HYB39S256160DT-7.5 vs HY57V561620BST-7 |
| MT48LC16M16A2P-75 | Synchronous DRAM, 16MX16, 5.4ns, CMOS, PDSO54, 0.400 INCH, LEAD FREE, PLASTIC, TSOP2-54 | Micron Technology Inc | HYB39S256160DT-7.5 vs MT48LC16M16A2P-75 |