Part Details for IRF150 by Rochester Electronics LLC
Overview of IRF150 by Rochester Electronics LLC
- Distributor Offerings: (0 listings)
- Number of FFF Equivalents: (10 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Part Details for IRF150
IRF150 CAD Models
IRF150 Part Data Attributes
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IRF150
Rochester Electronics LLC
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Datasheet
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IRF150
Rochester Electronics LLC
40A, 100V, 0.055ohm, N-CHANNEL, Si, POWER, MOSFET, TO-204AA
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| Pbfree Code | No | |
| Rohs Code | No | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | ROCHESTER ELECTRONICS LLC | |
| Reach Compliance Code | unknown | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 100 V | |
| Drain Current-Max (ID) | 40 A | |
| Drain-source On Resistance-Max | 0.055 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JEDEC-95 Code | TO-204AA | |
| JESD-30 Code | O-MBFM-P2 | |
| JESD-609 Code | e0 | |
| Number of Elements | 1 | |
| Number of Terminals | 2 | |
| Operating Mode | ENHANCEMENT MODE | |
| Package Body Material | METAL | |
| Package Shape | ROUND | |
| Package Style | FLANGE MOUNT | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Polarity/Channel Type | N-CHANNEL | |
| Pulsed Drain Current-Max (IDM) | 160 A | |
| Qualification Status | COMMERCIAL | |
| Surface Mount | NO | |
| Terminal Finish | TIN LEAD | |
| Terminal Form | PIN/PEG | |
| Terminal Position | BOTTOM | |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for IRF150
This table gives cross-reference parts and alternative options found for IRF150. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRF150, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| IRF151 | Power Field-Effect Transistor, 30A I(D), 80V, 0.055ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AE, TO-204AE, 2 PIN | International Rectifier | IRF150 vs IRF151 |
| IRF152 | Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET | Samsung Semiconductor | IRF150 vs IRF152 |
| 2N6764 | 2N6764, TO3-3 | New England Semiconductor | IRF150 vs 2N6764 |
| IRF151 | IRF151 | Texas Instruments | IRF150 vs IRF151 |
| IRF151 | Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET, | Fairchild Semiconductor Corporation | IRF150 vs IRF151 |
| IRF152 | Power Field-Effect Transistor, 30A I(D), 100V, 0.08ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AE, TO-204AE, 2 PIN | International Rectifier | IRF150 vs IRF152 |
| IRF151 | 40A, 60V, 0.055ohm, N-CHANNEL, Si, POWER, MOSFET, TO-204AA | Rochester Electronics LLC | IRF150 vs IRF151 |
| IRF151 | TRANSISTOR,MOSFET,N-CHANNEL,60V V(BR)DSS,40A I(D),TO-204AE | National Semiconductor Corporation | IRF150 vs IRF151 |
| IRF152 | 30A, 100V, 0.08ohm, N-CHANNEL, Si, POWER, MOSFET, TO-240AE, TO-204AE, 2 PIN | Rochester Electronics LLC | IRF150 vs IRF152 |
| IRF151 | Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET | Samsung Semiconductor | IRF150 vs IRF151 |