Part Details for IRF2807STRLPBF by Infineon Technologies AG
Overview of IRF2807STRLPBF by Infineon Technologies AG
- Distributor Offerings: (15 listings)
- Number of FFF Equivalents: (7 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (6 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Price & Stock for IRF2807STRLPBF
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
43AC3284
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Newark | Mosfet, N-Ch, 75V, 82A, To-263-3, Transistor Polarity:N Channel, Continuous Drain Current Id:82A, Drain Source Voltage Vds:75V, On Resistance Rds(On):0.013Ohm, Rds(On) Test Voltage Vgs:10V, Threshold Voltage Vgs:4V, Power Dissipationrohs Compliant: Yes |Infineon IRF2807STRLPBF Min Qty: 1 Package Multiple: 1 Date Code: 1 Container: Cut Tape | 643 |
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$1.0600 / $2.1100 | Buy Now |
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DISTI #
IRF2807STRLPBFCT-ND
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DigiKey | MOSFET N-CH 75V 82A D2PAK Min Qty: 1 Lead time: 10 Weeks Container: Digi-Reel®, Cut Tape (CT), Tape & Reel (TR) |
1482 In Stock |
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$0.8191 / $1.8900 | Buy Now |
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DISTI #
IRF2807STRLPBF
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Avnet Americas | Trans MOSFET N-CH 75V 82A 3-Pin(2+Tab) D2PAK T/R - Tape and Reel (Alt: IRF2807STRLPBF) RoHS: Compliant Min Qty: 800 Package Multiple: 800 Lead time: 10 Weeks, 0 Days Container: Reel | 0 |
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$0.7392 / $0.8976 | Buy Now |
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DISTI #
942-IRF2807STRLPBF
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Mouser Electronics | MOSFET MOSFT 75V 82A 13mOhm 106.7nC RoHS: Compliant | 11580 |
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$0.8360 / $1.8900 | Buy Now |
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Future Electronics | Single N-Channel 75V 13 mOhm 160 nC HEXFET® Power Mosfet - D2PAK RoHS: Compliant pbFree: Yes Min Qty: 800 Package Multiple: 800 Container: Reel | 0Reel |
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$0.8300 / $0.8950 | Buy Now |
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Future Electronics | Single N-Channel 75V 13 mOhm 160 nC HEXFET® Power Mosfet - D2PAK RoHS: Compliant pbFree: Yes Min Qty: 800 Package Multiple: 800 Container: Reel | 0Reel |
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$0.8300 / $0.8950 | Buy Now |
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Bristol Electronics | 953 |
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RFQ | ||
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DISTI #
IRF2807STRLPBF
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TME | Transistor: N-MOSFET, unipolar, 75V, 82A, 200W, D2PAK Min Qty: 800 | 0 |
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$0.6900 | RFQ |
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Ameya Holding Limited | Min Qty: 200 | 4040 |
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$1.8130 / $1.8690 | Buy Now |
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DISTI #
TMOSP11736
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Rutronik | N-CH 75V 82A 13mOhm TO252 RoHS: Compliant Min Qty: 800 Package Multiple: 800 Container: Reel |
Stock DE - 2400 Stock HK - 0 Stock US - 0 Stock SG - 0 |
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$0.6713 / $0.8702 | Buy Now |
Part Details for IRF2807STRLPBF
IRF2807STRLPBF CAD Models
IRF2807STRLPBF Part Data Attributes:
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IRF2807STRLPBF
Infineon Technologies AG
Buy Now
Datasheet
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Compare Parts:
IRF2807STRLPBF
Infineon Technologies AG
Power Field-Effect Transistor, 75A I(D), 75V, 0.013ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, PLASTIC, D2PAK-3
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| Rohs Code | Yes | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
| Reach Compliance Code | not_compliant | |
| ECCN Code | EAR99 | |
| Factory Lead Time | 10 Weeks | |
| Samacsys Manufacturer | Infineon | |
| Additional Feature | AVALANCHE RATED, HIGH RELIABILITY, ULTRA LOW RESISTANCE | |
| Avalanche Energy Rating (Eas) | 340 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 75 V | |
| Drain Current-Max (ID) | 75 A | |
| Drain-source On Resistance-Max | 0.013 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JESD-30 Code | R-PSSO-G2 | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Terminals | 2 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 175 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | 260 | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 230 W | |
| Pulsed Drain Current-Max (IDM) | 280 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | YES | |
| Terminal Finish | Matte Tin (Sn) - with Nickel (Ni) barrier | |
| Terminal Form | GULL WING | |
| Terminal Position | SINGLE | |
| Time@Peak Reflow Temperature-Max (s) | 30 | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for IRF2807STRLPBF
This table gives cross-reference parts and alternative options found for IRF2807STRLPBF. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRF2807STRLPBF, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| IRF2807STRRPBF | Power Field-Effect Transistor, 75A I(D), 75V, 0.013ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, PLASTIC, D2PAK-3 | Infineon Technologies AG | IRF2807STRLPBF vs IRF2807STRRPBF |
| IRF2807SPBF | Power Field-Effect Transistor, 75A I(D), 75V, 0.013ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, PLASTIC, D2PAK-3 | International Rectifier | IRF2807STRLPBF vs IRF2807SPBF |
| IRF2807S | Power Field-Effect Transistor, 75A I(D), 75V, 0.013ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, PLASTIC, D2PAK-3 | International Rectifier | IRF2807STRLPBF vs IRF2807S |
| IRF2807STRR | Power Field-Effect Transistor, 75A I(D), 75V, 0.013ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, PLASTIC, D2PAK-3 | International Rectifier | IRF2807STRLPBF vs IRF2807STRR |
| IRF2807STRL | Power Field-Effect Transistor, 75A I(D), 75V, 0.013ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, PLASTIC, D2PAK-3 | International Rectifier | IRF2807STRLPBF vs IRF2807STRL |
| IRF2807S | Power Field-Effect Transistor, 75A I(D), 75V, 0.013ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, PLASTIC, D2PAK-3 | Infineon Technologies AG | IRF2807STRLPBF vs IRF2807S |
| IRF2807SPBF | Power Field-Effect Transistor, 75A I(D), 75V, 0.013ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, PLASTIC, D2PAK-3 | Infineon Technologies AG | IRF2807STRLPBF vs IRF2807SPBF |