| Part Number | Manufacturer | Composite Price | Description | Compare |
|---|---|---|---|---|
| IRF533 | Harris Semiconductor | Check for Price | Power Field-Effect Transistor, 12A I(D), 80V, 0.23ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | IRF533 vs IRF533 |
| RFP12N10 | New Jersey Semiconductor Products Inc | Check for Price | Power Field-Effect Transistor, 12A I(D), 100V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | IRF533 vs RFP12N10 |
| IRF533 | Vishay Siliconix | Check for Price | Power Field-Effect Transistor, 12A I(D), 60V, 0.25ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | IRF533 vs IRF533 |
| BUZ20 | Rochester Electronics LLC | Check for Price | 13.5A, 100V, 0.2ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220 AB, TO-220AB, 3 PIN | IRF533 vs BUZ20 |
| IRF531 | Harris Semiconductor | Check for Price | Power Field-Effect Transistor, 14A I(D), 80V, 0.16ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | IRF533 vs IRF531 |
| BUK453-100A | NXP Semiconductors | Check for Price | Power Field-Effect Transistor, 14A I(D), 100V, 0.16ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | IRF533 vs BUK453-100A |
| IRF530 | International Rectifier | Check for Price | Power Field-Effect Transistor, 14A I(D), 100V, 0.16ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | IRF533 vs IRF530 |
| BUZ20 | Harris Semiconductor | Check for Price | Power Field-Effect Transistor, 12A I(D), 100V, 0.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | IRF533 vs BUZ20 |
| IRF531 | Motorola Semiconductor Products | Check for Price | Power Field-Effect Transistor, 14A I(D), 60V, 0.18ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | IRF533 vs IRF531 |
| RFP12N08 | Harris Semiconductor | Check for Price | Power Field-Effect Transistor, 12A I(D), 80V, 0.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AA | IRF533 vs RFP12N08 |
Part Details for IRF533 by STMicroelectronics
Results Overview of IRF533 by STMicroelectronics
- Distributor Offerings: (0 listings)
- Number of FFF Equivalents: (10 replacements)
- Tariff Estimator: (Not Available)
- Number of Functional Equivalents: (10 options)
- CAD Models: (Request Part)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Energy and Power Systems
Transportation and Logistics
Renewable Energy
Automotive
IRF533 Information
IRF533 by STMicroelectronics is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
IRF533 Part Data Attributes
|
|
IRF533
STMicroelectronics
Buy Now
Datasheet
|
Compare Parts:
IRF533
STMicroelectronics
Power Field-Effect Transistor, 12A I(D), 80V, 0.23ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
|
| Part Life Cycle Code | Obsolete | |
| Part Package Code | SFM | |
| Package Description | To-220, 3 Pin | |
| Pin Count | 3 | |
| ECCN Code | EAR99 | |
| Additional Feature | Fast Switching | |
| Avalanche Energy Rating (Eas) | 100 Mj | |
| Configuration | Single With Built-In Diode | |
| DS Breakdown Voltage-Min | 80 V | |
| Drain Current-Max (ID) | 12 A | |
| Drain-source On Resistance-Max | 0.23 Ω | |
| FET Technology | Metal-Oxide Semiconductor | |
| Feedback Cap-Max (Crss) | 10 Pf | |
| JEDEC-95 Code | TO-220AB | |
| JESD-30 Code | R-PSFM-T3 | |
| JESD-609 Code | e0 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Mode | Enhancement Mode | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | Plastic/Epoxy | |
| Package Shape | Rectangular | |
| Package Style | Flange Mount | |
| Polarity/Channel Type | N-Channel | |
| Power Dissipation-Max (Abs) | 79 W | |
| Pulsed Drain Current-Max (IDM) | 48 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | No | |
| Terminal Finish | Tin/Lead (Sn/Pb) | |
| Terminal Form | Through-Hole | |
| Terminal Position | Single | |
| Transistor Application | Switching | |
| Transistor Element Material | Silicon |
Alternate Parts for IRF533
This table gives cross-reference parts and alternative options found for IRF533. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRF533, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.