Part Details for IRF9230 by TT Electronics Resistors
Overview of IRF9230 by TT Electronics Resistors
- Distributor Offerings: (0 listings)
- Number of FFF Equivalents: (10 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Energy and Power Systems
Transportation and Logistics
Renewable Energy
Automotive
Part Details for IRF9230
IRF9230 CAD Models
IRF9230 Part Data Attributes
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IRF9230
TT Electronics Resistors
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Datasheet
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IRF9230
TT Electronics Resistors
Power Field-Effect Transistor, 6.5A I(D), 200V, 0.92ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-3
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| Rohs Code | Yes | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | TT ELECTRONICS PLC | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| Avalanche Energy Rating (Eas) | 66 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE | |
| DS Breakdown Voltage-Min | 200 V | |
| Drain Current-Max (ID) | 6.5 A | |
| Drain-source On Resistance-Max | 0.92 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JEDEC-95 Code | TO-3 | |
| JESD-30 Code | O-MBFM-P2 | |
| Number of Elements | 1 | |
| Number of Terminals | 2 | |
| Operating Mode | ENHANCEMENT MODE | |
| Package Body Material | METAL | |
| Package Shape | ROUND | |
| Package Style | FLANGE MOUNT | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Polarity/Channel Type | P-CHANNEL | |
| Pulsed Drain Current-Max (IDM) | 28 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | NO | |
| Terminal Form | PIN/PEG | |
| Terminal Position | BOTTOM | |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for IRF9230
This table gives cross-reference parts and alternative options found for IRF9230. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRF9230, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| IRF9230 | 6.5A, 200V, 0.92ohm, P-CHANNEL, Si, POWER, MOSFET, TO-3 | TT Electronics Power and Hybrid / Semelab Limited | IRF9230 vs IRF9230 |
| IRF9230 | Power Field-Effect Transistor, 6.5A I(D), 200V, 0.92ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AA, HERMETIC SEALED, MODIFIED TO-3, 2 PIN | International Rectifier | IRF9230 vs IRF9230 |
| IRF9230 | Power Field-Effect Transistor, 6.5A I(D), 200V, 0.92ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AA, HERMETIC SEALED, MODIFIED TO-3, 2 PIN | Infineon Technologies AG | IRF9230 vs IRF9230 |
| JANHCA2N6806 | Power Field-Effect Transistor, 6.5A I(D), 200V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, DIE-3 | International Rectifier | IRF9230 vs JANHCA2N6806 |
| 2N6806 | Power Field-Effect Transistor, 6.5A I(D), 200V, 0.8ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AA | International Rectifier | IRF9230 vs 2N6806 |
| 2N6806PBF | Power Field-Effect Transistor, 6.5A I(D), 200V, 0.8ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AA | International Rectifier | IRF9230 vs 2N6806PBF |
| IRF9230 | 6.5A, 200V, 0.8ohm, P-CHANNEL, Si, POWER, MOSFET, TO-204AA | Intersil Corporation | IRF9230 vs IRF9230 |
| IRF9230R1 | 6.5A, 200V, 0.92ohm, P-CHANNEL, Si, POWER, MOSFET, TO-3 | TT Electronics Power and Hybrid / Semelab Limited | IRF9230 vs IRF9230R1 |
| JANTXV2N6806 | Power Field-Effect Transistor, 6.5A I(D), 200V, 0.92ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AA, HERMETIC SEALED, MODIFIED TO-3, 2 PIN | Infineon Technologies AG | IRF9230 vs JANTXV2N6806 |
| 2N6806 | Power Field-Effect Transistor, 6.5A I(D), 200V, 0.8ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AA, | Infineon Technologies AG | IRF9230 vs 2N6806 |