Part Details for IRFF310 by International Rectifier
Results Overview of IRFF310 by International Rectifier
- Distributor Offerings: (3 listings)
- Number of FFF Equivalents: (0 replacements)
- Tariff Estimator: (Available) NEW
- Number of Functional Equivalents: (0 options)
- CAD Models: (Request Part)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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IRFF310 Information
IRFF310 by International Rectifier is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for IRFF310
| Part # | Distributor | Description | Stock | Price | Buy | |
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Bristol Electronics | Trans MOSFET N-CH 400V 1.25A 3-Pin TO-39 | 8 |
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RFQ | |
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Quest Components | POWER FIELD-EFFECT TRANSISTOR, 1.35A I(D), 400V, 3.6OHM, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET, TO-205AF | 5 |
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$30.7400 | Buy Now |
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ComSIT USA | REPETITIVE AVALANCHE AND DV/DT RATED HEXFET TRANSISTOR Power Field-Effect Transistor, 1.25A I(D), 400V, 4.15ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF ECCN: EAR99 RoHS: Not Compliant |
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RFQ |
US Tariff Estimator: IRFF310 by International Rectifier
Calculations from this tool are estimations only for imports into the United States. Please refer to the distributor or manufacturer and reference official US government sources and authorities to verify any final purchase costs.
IRFF310 Part Data Attributes
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IRFF310
International Rectifier
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Datasheet
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Compare Parts:
IRFF310
International Rectifier
Power Field-Effect Transistor, 1.25A I(D), 400V, 4.15ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF
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| Part Life Cycle Code | Transferred | |
| Package Description | Hermetic Sealed, To-39, 3 Pin | |
| ECCN Code | EAR99 | |
| HTS Code | 8541.29.00.95 | |
| Additional Feature | Avalanche Rated | |
| Avalanche Energy Rating (Eas) | 0.82 Mj | |
| Configuration | Single With Built-In Diode | |
| DS Breakdown Voltage-Min | 400 V | |
| Drain Current-Max (ID) | 1.25 A | |
| Drain-source On Resistance-Max | 4.15 Ω | |
| FET Technology | Metal-Oxide Semiconductor | |
| JEDEC-95 Code | TO-205AF | |
| JESD-30 Code | O-MBCY-W3 | |
| JESD-609 Code | e0 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Mode | Enhancement Mode | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | Metal | |
| Package Shape | Round | |
| Package Style | Cylindrical | |
| Polarity/Channel Type | N-Channel | |
| Power Dissipation Ambient-Max | 15 W | |
| Power Dissipation-Max (Abs) | 15 W | |
| Pulsed Drain Current-Max (IDM) | 5.5 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | No | |
| Terminal Finish | Tin Lead | |
| Terminal Form | Wire | |
| Terminal Position | Bottom | |
| Transistor Application | Switching | |
| Transistor Element Material | Silicon | |
| Turn-off Time-Max (toff) | 65 Ns | |
| Turn-on Time-Max (ton) | 35 Ns |
IRFF310 Frequently Asked Questions (FAQ)
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The maximum safe operating area (SOA) for the IRF310 is not explicitly stated in the datasheet, but it can be estimated based on the device's voltage and current ratings. As a general rule, it's recommended to operate the device within 20% of its maximum voltage and current ratings to ensure safe operation.
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The junction-to-case thermal resistance (RθJC) for the IRF310 is not directly provided in the datasheet. However, you can estimate it using the thermal resistance values provided in the datasheet. For example, the thermal resistance from junction to ambient (RθJA) is 62°C/W. Assuming a typical case temperature of 50°C, you can estimate RθJC to be around 40°C/W.
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The recommended gate drive voltage for the IRF310 is not explicitly stated in the datasheet, but a general rule of thumb is to use a gate drive voltage that is at least 2-3 times the threshold voltage (Vth) of the device. For the IRF310, Vth is around 2-4V, so a gate drive voltage of 6-12V is recommended.
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The IRF310 is a general-purpose MOSFET and not optimized for high-frequency switching applications. While it can be used in switching applications, its performance may not be optimal above 100 kHz. For high-frequency switching applications, it's recommended to use a MOSFET specifically designed for high-frequency operation, such as the IRF510 or IRF630.
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The body diode of the IRF310 is not optimized for high-frequency switching and may not be suitable for all applications. In some cases, it may be necessary to add an external diode to handle the reverse recovery characteristics of the body diode. Alternatively, you can use a MOSFET with an integrated diode or a Schottky diode to improve the overall performance of the circuit.