Part Details for IRFM9240 by Infineon Technologies AG
Overview of IRFM9240 by Infineon Technologies AG
- Distributor Offerings: (2 listings)
- Number of FFF Equivalents: (10 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Price & Stock for IRFM9240
Part # | Distributor | Description | Stock | Price | Buy | |
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Future Electronics | RoHS: Compliant pbFree: Yes Min Qty: 100 Package Multiple: 1 | 0 |
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$174.0000 | Buy Now |
DISTI #
C1S327400120582
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Chip1Stop | Trans MOSFET P-CH 200V 11A 3-Pin(3+Tab) TO-254AA RoHS: Not Compliant | 98 |
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$182.6200 / $188.9450 | Buy Now |
Part Details for IRFM9240
IRFM9240 CAD Models
IRFM9240 Part Data Attributes
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IRFM9240
Infineon Technologies AG
Buy Now
Datasheet
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Compare Parts:
IRFM9240
Infineon Technologies AG
Power Field-Effect Transistor, 11A I(D), 200V, 0.52ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA, HERMETIC SEALED PACKAGE-3
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Rohs Code | No | |
Part Life Cycle Code | Active | |
Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
Package Description | FLANGE MOUNT, S-MSFM-P3 | |
Reach Compliance Code | not_compliant | |
ECCN Code | EAR99 | |
Samacsys Manufacturer | Infineon | |
Additional Feature | HIGH RELIABILITY | |
Avalanche Energy Rating (Eas) | 500 mJ | |
Case Connection | ISOLATED | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 200 V | |
Drain Current-Max (ID) | 11 A | |
Drain-source On Resistance-Max | 0.52 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JEDEC-95 Code | TO-254AA | |
JESD-30 Code | S-MSFM-P3 | |
JESD-609 Code | e0 | |
Number of Elements | 1 | |
Number of Terminals | 3 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 150 °C | |
Package Body Material | METAL | |
Package Shape | SQUARE | |
Package Style | FLANGE MOUNT | |
Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
Polarity/Channel Type | P-CHANNEL | |
Power Dissipation-Max (Abs) | 125 W | |
Pulsed Drain Current-Max (IDM) | 44 A | |
Qualification Status | Not Qualified | |
Surface Mount | NO | |
Terminal Finish | Tin/Lead (Sn/Pb) | |
Terminal Form | PIN/PEG | |
Terminal Position | SINGLE | |
Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |
Alternate Parts for IRFM9240
This table gives cross-reference parts and alternative options found for IRFM9240. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRFM9240, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
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JANHCA2N7237 | Power Field-Effect Transistor, 11A I(D), 200V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, DIE-3 | Infineon Technologies AG | IRFM9240 vs JANHCA2N7237 |
IRFM9240R1 | 11A, 200V, 0.51ohm, P-CHANNEL, Si, POWER, MOSFET, TO-254AA, TO-254, 3 PIN | TT Electronics Power and Hybrid / Semelab Limited | IRFM9240 vs IRFM9240R1 |
IRFM9240-JQR-B | 11A, 200V, 0.51ohm, P-CHANNEL, Si, POWER, MOSFET, TO-254AA, TO-254, 3 PIN | TT Electronics Power and Hybrid / Semelab Limited | IRFM9240 vs IRFM9240-JQR-B |
IRFM9240-JQR-B | Power Field-Effect Transistor, 11A I(D), 200V, 0.51ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA, TO-254, 3 PIN | TT Electronics Resistors | IRFM9240 vs IRFM9240-JQR-B |
2N7237 | 11A, 200V, 0.51ohm, P-CHANNEL, Si, POWER, MOSFET, TO-254AA, TO-254, 3 PIN | TT Electronics Power and Hybrid / Semelab Limited | IRFM9240 vs 2N7237 |
JANS2N7237 | Power Field-Effect Transistor, 11A I(D), 200V, 0.52ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA, HERMETIC SEALED PACKAGE-3 | Infineon Technologies AG | IRFM9240 vs JANS2N7237 |
JANKCA2N7237 | Power Field-Effect Transistor, 11A I(D), 200V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, DIE-3 | Infineon Technologies AG | IRFM9240 vs JANKCA2N7237 |
JANTXV2N7237 | Power Field-Effect Transistor, 11A I(D), 200V, 0.51ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA, TO-254, 3 PIN | Microsemi Corporation | IRFM9240 vs JANTXV2N7237 |
IRFM9240R1 | Power Field-Effect Transistor, 11A I(D), 200V, 0.51ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA, TO-254, 3 PIN | TT Electronics Resistors | IRFM9240 vs IRFM9240R1 |
IRFM9240PBF | Power Field-Effect Transistor, 11A I(D), 200V, 0.52ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA, HERMETIC SEALED PACKAGE-3 | International Rectifier | IRFM9240 vs IRFM9240PBF |