Datasheets
JANKCA2N7237 by:

Power Field-Effect Transistor, 11A I(D), 200V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, DIE-3

Part Details for JANKCA2N7237 by Infineon Technologies AG

Overview of JANKCA2N7237 by Infineon Technologies AG

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Applications Industrial Automation

Part Details for JANKCA2N7237

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JANKCA2N7237 Part Data Attributes

JANKCA2N7237 Infineon Technologies AG
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JANKCA2N7237 Infineon Technologies AG Power Field-Effect Transistor, 11A I(D), 200V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, DIE-3
Rohs Code No
Part Life Cycle Code Active
Ihs Manufacturer INFINEON TECHNOLOGIES AG
Package Description DIE-3
Reach Compliance Code compliant
ECCN Code EAR99
Avalanche Energy Rating (Eas) 500 mJ
Case Connection DRAIN
Configuration SINGLE
DS Breakdown Voltage-Min 200 V
Drain Current-Max (ID) 11 A
FET Technology METAL-OXIDE SEMICONDUCTOR
JESD-30 Code R-XUUC-N3
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 3
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Package Body Material UNSPECIFIED
Package Shape RECTANGULAR
Package Style UNCASED CHIP
Polarity/Channel Type P-CHANNEL
Power Dissipation-Max (Abs) 125 W
Pulsed Drain Current-Max (IDM) 44 A
Qualification Status Not Qualified
Reference Standard MIL-19500/595F
Surface Mount YES
Terminal Form NO LEAD
Terminal Position UPPER
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for JANKCA2N7237

This table gives cross-reference parts and alternative options found for JANKCA2N7237. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of JANKCA2N7237, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
JANHCA2N7237 Power Field-Effect Transistor, 11A I(D), 200V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, DIE-3 Infineon Technologies AG JANKCA2N7237 vs JANHCA2N7237
IRFM9240R1 11A, 200V, 0.51ohm, P-CHANNEL, Si, POWER, MOSFET, TO-254AA, TO-254, 3 PIN TT Electronics Power and Hybrid / Semelab Limited JANKCA2N7237 vs IRFM9240R1
IRFM9240-JQR-B 11A, 200V, 0.51ohm, P-CHANNEL, Si, POWER, MOSFET, TO-254AA, TO-254, 3 PIN TT Electronics Power and Hybrid / Semelab Limited JANKCA2N7237 vs IRFM9240-JQR-B
IRFM9240-JQR-B Power Field-Effect Transistor, 11A I(D), 200V, 0.51ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA, TO-254, 3 PIN TT Electronics Resistors JANKCA2N7237 vs IRFM9240-JQR-B
IRFM9240 Power Field-Effect Transistor, 11A I(D), 200V, 0.52ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA, HERMETIC SEALED PACKAGE-3 Infineon Technologies AG JANKCA2N7237 vs IRFM9240
2N7237 11A, 200V, 0.51ohm, P-CHANNEL, Si, POWER, MOSFET, TO-254AA, TO-254, 3 PIN TT Electronics Power and Hybrid / Semelab Limited JANKCA2N7237 vs 2N7237
JANS2N7237 Power Field-Effect Transistor, 11A I(D), 200V, 0.52ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA, HERMETIC SEALED PACKAGE-3 Infineon Technologies AG JANKCA2N7237 vs JANS2N7237
JANTXV2N7237 Power Field-Effect Transistor, 11A I(D), 200V, 0.51ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA, TO-254, 3 PIN Microsemi Corporation JANKCA2N7237 vs JANTXV2N7237
IRFM9240R1 Power Field-Effect Transistor, 11A I(D), 200V, 0.51ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA, TO-254, 3 PIN TT Electronics Resistors JANKCA2N7237 vs IRFM9240R1
IRFM9240PBF Power Field-Effect Transistor, 11A I(D), 200V, 0.52ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA, HERMETIC SEALED PACKAGE-3 International Rectifier JANKCA2N7237 vs IRFM9240PBF
Part Number Description Manufacturer Compare
IRFN9240-JQR-BR4 Power Field-Effect Transistor, 11A I(D), 200V, 0.5ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-276AB, CERAMIC, SMD1, 3 PIN TT Electronics Resistors JANKCA2N7237 vs IRFN9240-JQR-BR4
IRFM9240R1 11A, 200V, 0.51ohm, P-CHANNEL, Si, POWER, MOSFET, TO-254AA, TO-254, 3 PIN TT Electronics Power and Hybrid / Semelab Limited JANKCA2N7237 vs IRFM9240R1
IRFN9240R4 11A, 200V, 0.5ohm, P-CHANNEL, Si, POWER, MOSFET, TO-276AB, CERAMIC, SMD1, 3 PIN TT Electronics Power and Hybrid / Semelab Limited JANKCA2N7237 vs IRFN9240R4
STFM9240SLX Power Field-Effect Transistor, 11A I(D), 200V, 0.51ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA, TO-254, 3 PIN Microsemi Corporation JANKCA2N7237 vs STFM9240SLX
2N7237R1 11A, 200V, 0.51ohm, P-CHANNEL, Si, POWER, MOSFET, TO-254AA, TO-254, 3 PIN TT Electronics Power and Hybrid / Semelab Limited JANKCA2N7237 vs 2N7237R1
2N7237 Power Field-Effect Transistor, 11A I(D), 200V, 0.51ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA, HERMETIC SEALED, TO-254, 3 PIN Sensitron Semiconductors JANKCA2N7237 vs 2N7237
IRFM9240-JQR-B Power Field-Effect Transistor, 11A I(D), 200V, 0.51ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA, TO-254, 3 PIN TT Electronics Resistors JANKCA2N7237 vs IRFM9240-JQR-B
IRFM9240 Power Field-Effect Transistor, 11A I(D), 200V, 0.52ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA, HERMETIC SEALED PACKAGE-3 Infineon Technologies AG JANKCA2N7237 vs IRFM9240
2N7237 Power Field-Effect Transistor, 11A I(D), 200V, 0.51ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA International Rectifier JANKCA2N7237 vs 2N7237
JANTX2N7237 Power Field-Effect Transistor, 11A I(D), 200V, 0.52ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA, HERMETIC SEALED PACKAGE-3 Infineon Technologies AG JANKCA2N7237 vs JANTX2N7237

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