| Harris Semiconductor |
Power Field-Effect Transistor, 4.6A I(D), 200V, 0.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA |
$0.5000 / $1.7500
|
|
View Details |
| Vishay Intertechnologies |
Power Field-Effect Transistor, 4.8A I(D), 200V, 0.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, DPAK-3 |
|
|
View Details |
| International Rectifier |
Power Field-Effect Transistor, 4.8A I(D), 200V, 0.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, |
$0.3125 / $1.7500
|
|
View Details |
| HARTING Technology Group |
|
|
|
View Details |
| Intersil Corporation |
4.6A, 200V, 0.8ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA |
$0.1755 / $0.9000
|
|
View Details |
| Fairchild Semiconductor Corporation |
Power Field-Effect Transistor, 4.6A I(D), 200V, 0.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA |
$0.3500 / $0.7700
|
|
View Details |
| Philips Semiconductors |
Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET, |
|
|
View Details |
| NXP Semiconductors |
4.8A, 200V, 0.8ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252, PLASTIC, SC-63, 3 PIN |
|
|
View Details |
| Hongxing Electrical Ltd |
- |
|
|
View Details |
| Samsung Semiconductor |
Power Field-Effect Transistor, 4.6A I(D), 200V, 0.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, DPAK-3 |
|
|
View Details |
| Thomson Consumer Electronics |
Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET |
|
|
View Details |
| Vishay Siliconix |
Power Field-Effect Transistor, 4.8A I(D), 200V, 0.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, DPAK-3 |
|
|
View Details |
| Rochester Electronics LLC |
4.6A, 200V, 0.8ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA |
|
|
View Details |