Select Manufacturer to View IRFR220 Details
Select Manufacturer
| Manufacturer | Description | Price Range | Set Alert | Details |
|---|---|---|---|---|
| Harris Semiconductor | Power Field-Effect Transistor, 4.6A I(D), 200V, 0.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | $0.2428 / $1.2500 |
|
View Details |
| Vishay Intertechnologies | Power Field-Effect Transistor, 4.8A I(D), 200V, 0.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA |
|
View Details | |
| Samsung Semiconductor | Power Field-Effect Transistor, 4.6A I(D), 200V, 0.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, DPAK-3 | $0.2890 / $1.3500 |
|
View Details |
| International Rectifier | Power Field-Effect Transistor, 4.8A I(D), 200V, 0.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, | $0.3125 / $2.1750 |
|
View Details |
| Fairchild Semiconductor Corporation | Power Field-Effect Transistor, 4.6A I(D), 200V, 0.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | $0.3500 / $0.7700 |
|
View Details |
| Intersil Corporation | 4.6A, 200V, 0.8ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA | $0.5000 / $0.7700 |
|
View Details |
| Vishay Siliconix | Power Field-Effect Transistor, 4.8A I(D), 200V, 0.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252 |
|
View Details | |
| Thomson Consumer Electronics | Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET |
|
View Details | |
| NXP Semiconductors | Power Field-Effect Transistor, 4.8A I(D), 200V, 0.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252 |
|
View Details | |
| Philips Semiconductors | Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET, |
|
View Details | |
| Rochester Electronics LLC | 4.6A, 200V, 0.8ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA |
|
View Details |