Part Details for IRFR5410PBF by Infineon Technologies AG
Overview of IRFR5410PBF by Infineon Technologies AG
- Distributor Offerings: (4 listings)
- Number of FFF Equivalents: (10 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Consumer Electronics
Energy and Power Systems
Renewable Energy
Price & Stock for IRFR5410PBF
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
63J6991
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Newark | P Channel Mosfet, -100V, 13A, D-Pak, Channel Type:P Channel, Drain Source Voltage Vds:100V, Continuous Drain Current Id:13A, Transistor Mounting:Surface Mount, Rds(On) Test Voltage:10V, Gate Source Threshold Voltage Max:4V Rohs Compliant: Yes |Infineon IRFR5410PBF Min Qty: 5 Package Multiple: 1 Date Code: 0 Container: Bulk | 0 |
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$0.3270 / $0.8220 | Buy Now |
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DISTI #
IRFR5410PBF-ND
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DigiKey | MOSFET P-CH 100V 13A DPAK Lead time: 98 Weeks Container: Tube | Limited Supply - Call |
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Buy Now | |
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Rochester Electronics | IRFR5410 - 100V Single P-Channel Power MOSFET in a D-Pak package ' RoHS: Compliant Status: Obsolete Min Qty: 1 | 42100 |
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$1.6100 / $1.8900 | Buy Now |
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Win Source Electronics | MOSFET P-CH 100V 13A DPAK | 439181 |
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$0.2450 / $0.3680 | Buy Now |
Part Details for IRFR5410PBF
IRFR5410PBF CAD Models
IRFR5410PBF Part Data Attributes:
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IRFR5410PBF
Infineon Technologies AG
Buy Now
Datasheet
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Compare Parts:
IRFR5410PBF
Infineon Technologies AG
Power Field-Effect Transistor, 13A I(D), 100V, 0.205ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, LEAD FREE, PLASTIC, DPAK-2/3
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| Rohs Code | Yes | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
| Reach Compliance Code | not_compliant | |
| ECCN Code | EAR99 | |
| Samacsys Manufacturer | Infineon | |
| Additional Feature | HIGH RELIABILITY, AVALANCHE RATED, ULTRA-LOW RESISTANCE | |
| Avalanche Energy Rating (Eas) | 194 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 100 V | |
| Drain Current-Max (ID) | 13 A | |
| Drain-source On Resistance-Max | 0.205 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JEDEC-95 Code | TO-252AA | |
| JESD-30 Code | R-PSSO-G2 | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Terminals | 2 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Operating Temperature-Min | -55 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | 260 | |
| Polarity/Channel Type | P-CHANNEL | |
| Power Dissipation-Max (Abs) | 66 W | |
| Pulsed Drain Current-Max (IDM) | 52 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | YES | |
| Terminal Finish | Matte Tin (Sn) - with Nickel (Ni) barrier | |
| Terminal Form | GULL WING | |
| Terminal Position | SINGLE | |
| Time@Peak Reflow Temperature-Max (s) | 30 | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for IRFR5410PBF
This table gives cross-reference parts and alternative options found for IRFR5410PBF. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRFR5410PBF, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| IRFR5410TRPBF | Power Field-Effect Transistor, 13A I(D), 100V, 0.205ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, LEAD FREE, PLASTIC, DPAK-2/3 | International Rectifier | IRFR5410PBF vs IRFR5410TRPBF |
| AUIRFR5410 | Power Field-Effect Transistor, 13A I(D), 100V, 0.205ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, ROHS COMPLIANT, PLASTIC, DPAK-3 | Infineon Technologies AG | IRFR5410PBF vs AUIRFR5410 |
| SP001578112 | Power Field-Effect Transistor, | Infineon Technologies AG | IRFR5410PBF vs SP001578112 |
| AUIRFR5410TRL | Power Field-Effect Transistor, 13A I(D), 100V, 0.205ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, ROHS COMPLIANT, PLASTIC, DPAK-3 | Infineon Technologies AG | IRFR5410PBF vs AUIRFR5410TRL |
| IRFR5410HR | Power Field-Effect Transistor, 13A I(D), 100V, 0.205ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, DPAK-3 | International Rectifier | IRFR5410PBF vs IRFR5410HR |
| IRFR5410TRPBF | Power Field-Effect Transistor, 13A I(D), 100V, 0.205ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, LEAD FREE, PLASTIC, DPAK-2/3 | Infineon Technologies AG | IRFR5410PBF vs IRFR5410TRPBF |
| AUIRFR5410TRL | Power Field-Effect Transistor, 13A I(D), 100V, 0.205ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, ROHS COMPLIANT, PLASTIC, DPAK-3 | International Rectifier | IRFR5410PBF vs AUIRFR5410TRL |
| AUIRFR5410TRR | Power Field-Effect Transistor, 13A I(D), 100V, 0.205ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, ROHS COMPLIANT, PLASTIC, DPAK-3 | International Rectifier | IRFR5410PBF vs AUIRFR5410TRR |
| IRFR5410TRLPBF | Power Field-Effect Transistor, 13A I(D), 100V, 0.205ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, LEAD FREE, PLASTIC, DPAK-2/3 | International Rectifier | IRFR5410PBF vs IRFR5410TRLPBF |
| IRFR5410 | Power Field-Effect Transistor, 13A I(D), 100V, 0.205ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, PLASTIC, DPAK-2/3 | International Rectifier | IRFR5410PBF vs IRFR5410 |