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Transistors / Power Field-Effect Transistors / IRFR9310PBF
Datasheets
IRFR9310PBF by:

Power Field-Effect Transistor, 1.8A I(D), 400V, 7ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, ROHS COMPLIANT, PLASTIC, DPAK-3

Part Details for IRFR9310PBF by Vishay Intertechnologies

Overview of IRFR9310PBF by Vishay Intertechnologies

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Applications Consumer Electronics Energy and Power Systems Renewable Energy

Price & Stock for IRFR9310PBF

Part # Distributor Description Stock Price Buy
DISTI # 38K2645
Newark Mosfet, P-Ch, 400V, 1.8A, 150Deg C, 50W, Channel Type:P Channel, Drain Source Voltage Vds:400V, Continuous Drain Current Id:1.8A, Transistor Mounting:Surface Mount, Rds(On) Test Voltage:10V, Gate Source Threshold Voltage Max:4V Rohs Compliant: Yes |Vishay IRFR9310PBF RoHS: Compliant Min Qty: 1 Package Multiple: 1 Date Code: 0 Container: Bulk 0
  • 1 $1.3900
  • 10 $1.0200
  • 25 $0.9690
  • 50 $0.9180
  • 100 $0.8670
  • 500 $0.7830
$0.7830 / $1.3900 Buy Now
DISTI # 844-IRFR9310PBF
Mouser Electronics MOSFETs P-Chan 400V 1.8 Amp RoHS: Compliant 10155
  • 1 $1.2500
  • 10 $0.8690
  • 100 $0.7510
  • 500 $0.6790
  • 1,000 $0.6560
$0.6560 / $1.2500 Buy Now
DISTI # 70078967
RS MOSFET, Power, P-Ch, VDSS -400V, RDS(ON) 7 Ohms, ID -1.8A, TO-252AA, PD 50W, VGS +/-20V | Vishay PCS IRFR9310PBF RoHS: Not Compliant Min Qty: 3000 Package Multiple: 1 Container: Bulk 0
  • 3,000 $1.3500
  • 30,000 $1.2900
  • 150,000 $1.2200
  • 300,000 $1.1500
$1.1500 / $1.3500 RFQ
Future Electronics Single P-Channel 400 V 7 Ohm Surface Mount HEXFET Power MOSFET in a D-PAK-3 RoHS: Compliant pbFree: Yes Min Qty: 3000 Package Multiple: 75 Container: Tube 0
Tube
  • 75 $0.6850
  • 300 $0.6600
  • 1,500 $0.6250
  • 3,000 $0.6150
  • 9,375 $0.5800
$0.5800 / $0.6850 Buy Now
Future Electronics Single P-Channel 400 V 7 Ohm Surface Mount HEXFET Power MOSFET in a D-PAK-3 RoHS: Compliant pbFree: Yes Min Qty: 3000 Package Multiple: 75 Container: Tube 0
Tube
  • 75 $0.6800
  • 300 $0.6500
  • 1,125 $0.6250
  • 2,250 $0.6100
  • 5,625 $0.5800
$0.5800 / $0.6800 Buy Now
DISTI # IRFR9310PBF
TTI MOSFETs P-Chan 400V 1.8 Amp RoHS: Compliant pbFree: Pb-Free Min Qty: 75 Package Multiple: 75 Container: Tube Americas - 3000
In Stock
  • 75 $0.6980
  • 150 $0.6800
  • 525 $0.6110
  • 5,025 $0.5990
$0.5990 / $0.6980 Buy Now
DISTI # IRFR9310PBF
TME Transistor: P-MOSFET, unipolar, -400V, -1.1A, 50W, DPAK,TO252 Min Qty: 1 1076
  • 1 $1.5700
  • 10 $0.6550
  • 75 $0.5840
  • 150 $0.5640
  • 525 $0.5290
  • 1,050 $0.5120
  • 10,050 $0.4630
$0.4630 / $1.5700 Buy Now
DISTI # C1S803600444551
Chip1Stop Trans MOSFET P-CH Si 400V 1.8A 3-Pin(2+Tab) DPAK RoHS: Compliant 9662
  • 5 $0.8490
  • 10 $0.7030
  • 25 $0.6480
  • 100 $0.5020
  • 250 $0.4920
  • 500 $0.3550
  • 1,000 $0.3540
  • 2,500 $0.3180
  • 5,000 $0.3150
$0.3150 / $0.8490 Buy Now
DISTI # C1S803604552618
Chip1Stop Trans MOSFET P-CH Si 400V 1.8A 3-Pin(2+Tab) DPAK RoHS: Compliant 2386
  • 1 $0.8820
  • 10 $0.7063
  • 100 $0.6447
  • 500 $0.5946
  • 1,000 $0.5594
$0.5594 / $0.8820 Buy Now
DISTI # C1S803600836813
Chip1Stop Trans MOSFET P-CH Si 400V 1.8A 3-Pin(2+Tab) DPAK RoHS: Compliant Container: Tube 270
  • 1 $0.8850
  • 10 $0.7570
  • 50 $0.7330
  • 100 $0.7120
  • 200 $0.5780
$0.5780 / $0.8850 Buy Now
DISTI # IRFR9310PBF
EBV Elektronik Trans MOSFET P-CH 400V 1.8A 3-Pin(2+Tab) DPAK (Alt: IRFR9310PBF) RoHS: Compliant Min Qty: 75 Package Multiple: 75 Lead time: 14 Weeks, 0 Days EBV - 300
Buy Now

Part Details for IRFR9310PBF

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IRFR9310PBF Part Data Attributes

Parametric Data
IRFR9310PBF Vishay Intertechnologies
Buy Now Datasheet
Compare Parts:
IRFR9310PBF Vishay Intertechnologies Power Field-Effect Transistor, 1.8A I(D), 400V, 7ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, ROHS COMPLIANT, PLASTIC, DPAK-3
Pbfree Code Yes
Rohs Code Yes
Part Life Cycle Code Active
Ihs Manufacturer VISHAY INTERTECHNOLOGY INC
Part Package Code TO-252AA
Package Description ROHS COMPLIANT, PLASTIC, DPAK-3
Pin Count 3
Reach Compliance Code not_compliant
ECCN Code EAR99
Factory Lead Time 12 Weeks
Samacsys Manufacturer Vishay
Additional Feature AVALANCHE RATED
Avalanche Energy Rating (Eas) 92 mJ
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 400 V
Drain Current-Max (ID) 1.8 A
Drain-source On Resistance-Max 7 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-252AA
JESD-30 Code R-PSSO-G2
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 2
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Operating Temperature-Min -55 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type P-CHANNEL
Power Dissipation-Max (Abs) 50 W
Pulsed Drain Current-Max (IDM) 7.2 A
Qualification Status Not Qualified
Surface Mount YES
Terminal Finish MATTE TIN
Terminal Form GULL WING
Terminal Position SINGLE
Time@Peak Reflow Temperature-Max (s) 10
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for IRFR9310PBF

This table gives cross-reference parts and alternative options found for IRFR9310PBF. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRFR9310PBF, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
IRFR9310 Power Field-Effect Transistor, 1.8A I(D), 400V, 7ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA International Rectifier IRFR9310PBF vs IRFR9310
SIHFR9310TRL-GE3 TRANSISTOR 1.8 A, 400 V, 7 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-252, HALOGEN FREE AND ROHS COMPLIANT, DPAK-3, FET General Purpose Power Vishay Siliconix IRFR9310PBF vs SIHFR9310TRL-GE3
SIHFR9310TR-GE3 Power Field-Effect Transistor, 1.8A I(D), 400V, 7ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, Vishay Intertechnologies IRFR9310PBF vs SIHFR9310TR-GE3
IRFR9310TRL Power Field-Effect Transistor, 1.8A I(D), 400V, 7ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA International Rectifier IRFR9310PBF vs IRFR9310TRL
SIHFR9310-GE3 Power Field-Effect Transistor, 1.8A I(D), 400V, 7ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, Vishay Intertechnologies IRFR9310PBF vs SIHFR9310-GE3
IRFR9310TRRPBF Power Field-Effect Transistor, 1.8A I(D), 400V, 7ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, ROHS COMPLIANT, DPAK-3 Vishay Siliconix IRFR9310PBF vs IRFR9310TRRPBF
SIHFR9310TL TRANSISTOR 1.8 A, 400 V, 7 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-252, DPAK-3, FET General Purpose Power Vishay Siliconix IRFR9310PBF vs SIHFR9310TL
IRFR9310TRLPBF Power Field-Effect Transistor, 1.8A I(D), 400V, 7ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, ROHS COMPLIANT, DPAK-3 Vishay Siliconix IRFR9310PBF vs IRFR9310TRLPBF
SIHFR9310TRR-GE3 TRANSISTOR 1.8 A, 400 V, 7 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-252, HALOGEN FREE AND ROHS COMPLIANT, DPAK-3, FET General Purpose Power Vishay Siliconix IRFR9310PBF vs SIHFR9310TRR-GE3
IRFR9310TRL Power Field-Effect Transistor, 1.8A I(D), 400V, 7ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, DPAK-3 Vishay Siliconix IRFR9310PBF vs IRFR9310TRL
Part Number Description Manufacturer Compare
IRFR9310TRPBF Power Field-Effect Transistor, 1.8A I(D), 400V, 7ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, ROHS COMPLIANT, PLASTIC, DPAK-3 Vishay Intertechnologies IRFR9310PBF vs IRFR9310TRPBF
SIHFR9310TRL-GE3 TRANSISTOR 1.8 A, 400 V, 7 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-252, HALOGEN FREE AND ROHS COMPLIANT, DPAK-3, FET General Purpose Power Vishay Siliconix IRFR9310PBF vs SIHFR9310TRL-GE3
SIHFR9310TL TRANSISTOR 1.8 A, 400 V, 7 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-252, DPAK-3, FET General Purpose Power Vishay Siliconix IRFR9310PBF vs SIHFR9310TL
SIHFR9310-GE3 Power Field-Effect Transistor, 1.8A I(D), 400V, 7ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, Vishay Intertechnologies IRFR9310PBF vs SIHFR9310-GE3
IRFR9310TRL Power Field-Effect Transistor, 1.8A I(D), 400V, 7ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA International Rectifier IRFR9310PBF vs IRFR9310TRL
IRFR9310 Power Field-Effect Transistor, 1.8A I(D), 400V, 7ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA International Rectifier IRFR9310PBF vs IRFR9310
SIHFR9310TRR-GE3 TRANSISTOR 1.8 A, 400 V, 7 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-252, HALOGEN FREE AND ROHS COMPLIANT, DPAK-3, FET General Purpose Power Vishay Siliconix IRFR9310PBF vs SIHFR9310TRR-GE3
IRFR9310TRR Power Field-Effect Transistor, 1.8A I(D), 400V, 7ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA International Rectifier IRFR9310PBF vs IRFR9310TRR
IRFR9310TRPBF Power Field-Effect Transistor, 1.8A I(D), 400V, 7ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, ROHS COMPLIANT, DPAK-3 Vishay Siliconix IRFR9310PBF vs IRFR9310TRPBF
IRFR9310TRLPBF Power Field-Effect Transistor, 1.8A I(D), 400V, 7ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, LEAD FREE, PLASTIC, DPAK-3 International Rectifier IRFR9310PBF vs IRFR9310TRLPBF

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