Part Details for IS41LV16400-50TE by Integrated Silicon Solution Inc
Overview of IS41LV16400-50TE by Integrated Silicon Solution Inc
- Distributor Offerings: (0 listings)
- Number of FFF Equivalents: (10 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Applications
Internet of Things (IoT)
Environmental Monitoring
Industrial Automation
Financial Technology (Fintech)
Smart Cities
Transportation and Logistics
Agriculture Technology
Telecommunications
Virtual Reality (VR), Augmented Reality (AR), and Vision Systems
Education and Research
Consumer Electronics
Security and Surveillance
Audio and Video Systems
Computing and Data Storage
Healthcare
Renewable Energy
Entertainment and Gaming
Robotics and Drones
Part Details for IS41LV16400-50TE
IS41LV16400-50TE CAD Models
IS41LV16400-50TE Part Data Attributes
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IS41LV16400-50TE
Integrated Silicon Solution Inc
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Datasheet
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IS41LV16400-50TE
Integrated Silicon Solution Inc
EDO DRAM, 4MX16, 50ns, CMOS, PDSO50, 0.400 INCH, TSOP2-50
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| Pbfree Code | No | |
| Rohs Code | No | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | INTEGRATED SILICON SOLUTION INC | |
| Part Package Code | TSOP2 | |
| Package Description | 0.400 INCH, TSOP2-50 | |
| Pin Count | 50 | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| HTS Code | 8542.32.00.02 | |
| Access Mode | FAST PAGE WITH EDO | |
| Access Time-Max | 50 ns | |
| Additional Feature | AUTO REFRESH | |
| I/O Type | COMMON | |
| JESD-30 Code | R-PDSO-G50 | |
| JESD-609 Code | e0 | |
| Length | 20.95 mm | |
| Memory Density | 67108864 bit | |
| Memory IC Type | EDO DRAM | |
| Memory Width | 16 | |
| Moisture Sensitivity Level | 3 | |
| Number of Functions | 1 | |
| Number of Ports | 1 | |
| Number of Terminals | 50 | |
| Number of Words | 4194304 words | |
| Number of Words Code | 4000000 | |
| Operating Mode | ASYNCHRONOUS | |
| Operating Temperature-Max | 85 °C | |
| Operating Temperature-Min | -30 °C | |
| Organization | 4MX16 | |
| Output Characteristics | 3-STATE | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Code | TSOP2 | |
| Package Equivalence Code | TSOP50,.46,32 | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE, THIN PROFILE | |
| Qualification Status | Not Qualified | |
| Refresh Cycles | 4096 | |
| Seated Height-Max | 1.2 mm | |
| Self Refresh | NO | |
| Standby Current-Max | 0.0005 A | |
| Supply Current-Max | 0.09 mA | |
| Supply Voltage-Max (Vsup) | 3.6 V | |
| Supply Voltage-Min (Vsup) | 3 V | |
| Supply Voltage-Nom (Vsup) | 3.3 V | |
| Surface Mount | YES | |
| Technology | CMOS | |
| Temperature Grade | OTHER | |
| Terminal Finish | TIN LEAD | |
| Terminal Form | GULL WING | |
| Terminal Pitch | 0.8 mm | |
| Terminal Position | DUAL | |
| Width | 10.16 mm |
Alternate Parts for IS41LV16400-50TE
This table gives cross-reference parts and alternative options found for IS41LV16400-50TE. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IS41LV16400-50TE, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| HM5164165LTT-5 | EDO DRAM, 4MX16, 50ns, CMOS, PDSO50, 0.400 INCH, PLASTIC,TSOP-50 | Elpida Memory Inc | IS41LV16400-50TE vs HM5164165LTT-5 |
| KM416V4004AS-L5 | EDO DRAM, 4MX16, 50ns, CMOS, PDSO50, 0.400 INCH, PLASTIC, TSOP2-50 | Samsung Semiconductor | IS41LV16400-50TE vs KM416V4004AS-L5 |
| K4E641612B-TC50 | EDO DRAM, 4MX16, 50ns, CMOS, PDSO50, 0.400 INCH, PLASTIC, TSOP2-50 | Samsung Semiconductor | IS41LV16400-50TE vs K4E641612B-TC50 |
| GM71VS65163CT-5 | EDO DRAM, 4MX16, 50ns, CMOS, PDSO50, 0.400 INCH, PLASTIC, TSOP2-50 | SK Hynix Inc | IS41LV16400-50TE vs GM71VS65163CT-5 |
| KM416V4004BS-5 | EDO DRAM, 4MX16, 50ns, CMOS, PDSO50, 0.400 INCH, PLASTIC, TSOP2-50 | Samsung Semiconductor | IS41LV16400-50TE vs KM416V4004BS-5 |
| TC5164165BFT-50 | IC 4M X 16 EDO DRAM, 50 ns, PDSO50, 0.400 INCH, 0.80 MM PITCH, PLASTIC, TSOP2-50, Dynamic RAM | Toshiba America Electronic Components | IS41LV16400-50TE vs TC5164165BFT-50 |
| TC5165165AFT-50 | IC 4M X 16 EDO DRAM, 50 ns, PDSO50, 0.400 INCH, 0.80 MM PITCH, PLASTIC, TSOP2-50, Dynamic RAM | Toshiba America Electronic Components | IS41LV16400-50TE vs TC5165165AFT-50 |
| UPD4265165G5-A50-7JF | EDO DRAM, 4MX16, 50ns, CMOS, PDSO50, 0.400 INCH, PLASTIC, TSOP2-50 | NEC Electronics Group | IS41LV16400-50TE vs UPD4265165G5-A50-7JF |
| UPD4264165G5-A50 | 4MX16 EDO DRAM, 50ns, PDSO50, 0.400 INCH, PLASTIC, TSOP2-50 | Renesas Electronics Corporation | IS41LV16400-50TE vs UPD4264165G5-A50 |
| KM416V4104BS-5 | EDO DRAM, 4MX16, 50ns, CMOS, PDSO50, 0.400 INCH, PLASTIC, TSOP2-50 | Samsung Semiconductor | IS41LV16400-50TE vs KM416V4104BS-5 |