Datasheets
KM416V4004BS-5 by: Samsung Semiconductor

EDO DRAM, 4MX16, 50ns, CMOS, PDSO50, 0.400 INCH, PLASTIC, TSOP2-50

Part Details for KM416V4004BS-5 by Samsung Semiconductor

Overview of KM416V4004BS-5 by Samsung Semiconductor

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Applications Consumer Electronics Computing and Data Storage

Part Details for KM416V4004BS-5

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KM416V4004BS-5 Part Data Attributes:

KM416V4004BS-5 Samsung Semiconductor
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KM416V4004BS-5 Samsung Semiconductor EDO DRAM, 4MX16, 50ns, CMOS, PDSO50, 0.400 INCH, PLASTIC, TSOP2-50
Rohs Code No
Part Life Cycle Code Obsolete
Ihs Manufacturer SAMSUNG SEMICONDUCTOR INC
Part Package Code TSOP2
Package Description TSOP2, TSOP50,.46,32
Pin Count 50
Reach Compliance Code unknown
ECCN Code EAR99
HTS Code 8542.32.00.02
Access Mode FAST PAGE WITH EDO
Access Time-Max 50 ns
Additional Feature CAS BEFORE RAS/RAS ONLY/HIDDEN REFRESH
I/O Type COMMON
JESD-30 Code R-PDSO-G50
JESD-609 Code e0
Length 20.95 mm
Memory Density 67108864 bit
Memory IC Type EDO DRAM
Memory Width 16
Number of Functions 1
Number of Ports 1
Number of Terminals 50
Number of Words 4194304 words
Number of Words Code 4000000
Operating Mode ASYNCHRONOUS
Operating Temperature-Max 70 °C
Operating Temperature-Min
Organization 4MX16
Output Characteristics 3-STATE
Package Body Material PLASTIC/EPOXY
Package Code TSOP2
Package Equivalence Code TSOP50,.46,32
Package Shape RECTANGULAR
Package Style SMALL OUTLINE, THIN PROFILE
Qualification Status Not Qualified
Refresh Cycles 8192
Seated Height-Max 1.2 mm
Self Refresh NO
Standby Current-Max 0.0005 A
Supply Current-Max 0.1 mA
Supply Voltage-Max (Vsup) 3.6 V
Supply Voltage-Min (Vsup) 3 V
Supply Voltage-Nom (Vsup) 3.3 V
Surface Mount YES
Technology CMOS
Temperature Grade COMMERCIAL
Terminal Finish TIN LEAD
Terminal Form GULL WING
Terminal Pitch 0.8 mm
Terminal Position DUAL
Width 10.16 mm

Alternate Parts for KM416V4004BS-5

This table gives cross-reference parts and alternative options found for KM416V4004BS-5. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of KM416V4004BS-5, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
HYB3166165BTL-50 EDO DRAM, 4MX16, 50ns, CMOS, PDSO50, 0.400 INCH, PLASTIC, TSOP2-50 Siemens KM416V4004BS-5 vs HYB3166165BTL-50
K4E641612E-TP50 EDO DRAM, 4MX16, 50ns, CMOS, PDSO50, 0.400 INCH, PLASTIC, TSOP2-50 Samsung Semiconductor KM416V4004BS-5 vs K4E641612E-TP50
K4E661612C-TL50 EDO DRAM, 4MX16, 50ns, CMOS, PDSO50, 0.400 INCH, PLASTIC, TSOP2-50 Samsung Semiconductor KM416V4004BS-5 vs K4E661612C-TL50
IS41LV16400-50TE EDO DRAM, 4MX16, 50ns, CMOS, PDSO50, 0.400 INCH, TSOP2-50 Integrated Silicon Solution Inc KM416V4004BS-5 vs IS41LV16400-50TE
K4E641612B-TC500 EDO DRAM, 4MX16, 50ns, CMOS, PDSO50, 0.400 INCH, PLASTIC, TSOP2-50 Samsung Semiconductor KM416V4004BS-5 vs K4E641612B-TC500
K4E661612C-TC50 EDO DRAM, 4MX16, 50ns, CMOS, PDSO50, 0.400 INCH, PLASTIC, TSOP2-50 Samsung Semiconductor KM416V4004BS-5 vs K4E661612C-TC50
K4E661612B-TL50 EDO DRAM, 4MX16, 50ns, CMOS, PDSO50, 0.400 INCH, PLASTIC, TSOP2-50 Samsung Semiconductor KM416V4004BS-5 vs K4E661612B-TL50
UPD4264165G5-A50 4MX16 EDO DRAM, 50ns, PDSO50, 0.400 INCH, PLASTIC, TSOP2-50 Renesas Electronics Corporation KM416V4004BS-5 vs UPD4264165G5-A50
K4E661612C-TC500 EDO DRAM, 4MX16, 50ns, CMOS, PDSO50, 0.400 INCH, PLASTIC, TSOP2-50 Samsung Semiconductor KM416V4004BS-5 vs K4E661612C-TC500
M5M465165DTP-5S EDO DRAM, 4MX16, 50ns, CMOS, PDSO50, 0.400 INCH, TSOP-50 Mitsubishi Electric KM416V4004BS-5 vs M5M465165DTP-5S
Part Number Description Manufacturer Compare
K4F641612D-TI45 Fast Page DRAM, 4MX16, 45ns, CMOS, PDSO50, 0.400 INCH, PLASTIC, TSOP2-50 Samsung Semiconductor KM416V4004BS-5 vs K4F641612D-TI45
HYB3165160AT-60 Fast Page DRAM, 4MX16, 60ns, CMOS, PDSO50, 0.400 INCH, 0.80 MM PITCH, PLASTIC, TSOP2-50 Infineon Technologies AG KM416V4004BS-5 vs HYB3165160AT-60
K4F661611B-TC50 Fast Page DRAM, 4MX16, 50ns, CMOS, PDSO50, 0.400 INCH, PLASTIC, TSOP2-50 Samsung Semiconductor KM416V4004BS-5 vs K4F661611B-TC50
KM416V4000C-SL5 Fast Page DRAM, 4MX16, 50ns, CMOS, PDSO50, 0.400 INCH, PLASTIC, TSOP2-50 Samsung Semiconductor KM416V4004BS-5 vs KM416V4000C-SL5
V53C364165AT50 EDO DRAM, 4MX16, 50ns, CMOS, PDSO50, 0.400 INCH, PLASTIC, TSOP2-50 Mosel Vitelic Corporation KM416V4004BS-5 vs V53C364165AT50
MT4LC4M16U2TG-52TR EDO DRAM, 4MX16, 52ns, CMOS, PDSO50, 0.400 INCH, PLASTIC, TSOP-50 Micron Technology Inc KM416V4004BS-5 vs MT4LC4M16U2TG-52TR
HYB3166165ATL-50 EDO DRAM, 4MX16, 50ns, CMOS, PDSO50, 0.400 INCH, PLASTIC, TSOP2-50 Infineon Technologies AG KM416V4004BS-5 vs HYB3166165ATL-50
UPD4264160G5-A60 4MX16 FAST PAGE DRAM, 60ns, PDSO50, 0.400 INCH, PLASTIC, TSOP2-50 Renesas Electronics Corporation KM416V4004BS-5 vs UPD4264160G5-A60
K4F661612C-TC500 Fast Page DRAM, 4MX16, 50ns, CMOS, PDSO50, 0.400 INCH, PLASTIC, TSOP2-50 Samsung Semiconductor KM416V4004BS-5 vs K4F661612C-TC500
HYB3166165ATL-50 EDO DRAM, 4MX16, 50ns, CMOS, PDSO50 Siemens KM416V4004BS-5 vs HYB3166165ATL-50

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