Datasheets
IS42S32200E-6TL by:

Synchronous DRAM, 2MX32, 5.5ns, CMOS, PDSO86, 0.400 INCH, LEAD FREE, TSOP2-86

Part Details for IS42S32200E-6TL by Integrated Silicon Solution Inc

Overview of IS42S32200E-6TL by Integrated Silicon Solution Inc

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Price & Stock for IS42S32200E-6TL

Part # Distributor Description Stock Price Buy
DISTI # 55M7773
Newark 64M, 3.3V, Sdram, 2Mx32, 166Mhz, 86 Pin Tsop Ii (400 Mil) Rohs |Integrated Silicon Solution (Issi) IS42S32200E-6TL Min Qty: 324 Package Multiple: 1 Date Code: 0 Container: Bulk 0
Buy Now
Bristol Electronics   15
RFQ
Quest Components 2M X 32 SYNCHRONOUS DRAM, 5.5 ns, 86 Pin Plastic SMT 12
  • 1 $3.6000
  • 4 $3.0000
  • 9 $2.6400
$2.6400 / $3.6000 Buy Now

Part Details for IS42S32200E-6TL

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IS42S32200E-6TL Part Data Attributes

IS42S32200E-6TL Integrated Silicon Solution Inc
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IS42S32200E-6TL Integrated Silicon Solution Inc Synchronous DRAM, 2MX32, 5.5ns, CMOS, PDSO86, 0.400 INCH, LEAD FREE, TSOP2-86
Pbfree Code Yes
Rohs Code Yes
Part Life Cycle Code Obsolete
Ihs Manufacturer INTEGRATED SILICON SOLUTION INC
Part Package Code TSOP2
Package Description TSOP2, TSSOP86,.46,20
Pin Count 86
Reach Compliance Code compliant
ECCN Code EAR99
HTS Code 8542.32.00.02
Samacsys Manufacturer Integrated Silicon Solution Inc.
Access Mode FOUR BANK PAGE BURST
Access Time-Max 5.5 ns
Additional Feature AUTO/SELF REFRESH
Clock Frequency-Max (fCLK) 166 MHz
I/O Type COMMON
Interleaved Burst Length 1,2,4,8
JESD-30 Code R-PDSO-G86
JESD-609 Code e3
Length 22.22 mm
Memory Density 67108864 bit
Memory IC Type SYNCHRONOUS DRAM
Memory Width 32
Number of Functions 1
Number of Ports 1
Number of Terminals 86
Number of Words 2097152 words
Number of Words Code 2000000
Operating Mode SYNCHRONOUS
Operating Temperature-Max 70 °C
Operating Temperature-Min
Organization 2MX32
Output Characteristics 3-STATE
Package Body Material PLASTIC/EPOXY
Package Code TSOP2
Package Equivalence Code TSSOP86,.46,20
Package Shape RECTANGULAR
Package Style SMALL OUTLINE, THIN PROFILE
Peak Reflow Temperature (Cel) 260
Qualification Status Not Qualified
Refresh Cycles 4096
Seated Height-Max 1.2 mm
Self Refresh YES
Sequential Burst Length 1,2,4,8,FP
Standby Current-Max 0.002 A
Supply Current-Max 0.16 mA
Supply Voltage-Max (Vsup) 3.6 V
Supply Voltage-Min (Vsup) 3 V
Supply Voltage-Nom (Vsup) 3.3 V
Surface Mount YES
Technology CMOS
Temperature Grade COMMERCIAL
Terminal Finish MATTE TIN
Terminal Form GULL WING
Terminal Pitch 0.5 mm
Terminal Position DUAL
Time@Peak Reflow Temperature-Max (s) 10
Width 10.16 mm

Alternate Parts for IS42S32200E-6TL

This table gives cross-reference parts and alternative options found for IS42S32200E-6TL. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IS42S32200E-6TL, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
HY57V643220DTP-6 Synchronous DRAM, 2MX32, 5.5ns, CMOS, PDSO86, 0.400 X 0.875 INCH, 0.50 MM PITCH, LEAD FREE, TSOP2-86 SK Hynix Inc IS42S32200E-6TL vs HY57V643220DTP-6
K4S643232H-UC60T Synchronous DRAM, 2MX32, 5.5ns, CMOS, PDSO86, 0.400 INCH X 0.875 INCH, 0.50 MM PITCH, ROHS COMPLIANT, TSOP2-86 Samsung Semiconductor IS42S32200E-6TL vs K4S643232H-UC60T
IS42S32200-6TL Synchronous DRAM, 2MX32, 5.5ns, CMOS, PDSO86, 0.400 INCH, LEAD FREE, TSOP2-86 Integrated Silicon Solution Inc IS42S32200E-6TL vs IS42S32200-6TL
K4S643232H-UC600 Synchronous DRAM, 2MX32, 5.5ns, CMOS, PDSO86, 0.400 INCH X 0.875 INCH, 0.50 MM PITCH, ROHS COMPLIANT, TSOP2-86 Samsung Semiconductor IS42S32200E-6TL vs K4S643232H-UC600
HY57V643220CT-6 Synchronous DRAM, 2MX32, 5.5ns, CMOS, PDSO86, 0.400 X 0.875 INCH, 0.5 MM PITCH, TSOP2-86 SK Hynix Inc IS42S32200E-6TL vs HY57V643220CT-6
HY57V643220DT-6 Synchronous DRAM, 2MX32, 5.5ns, CMOS, PDSO86, 0.400 X 0.875 INCH, 0.50 MM PITCH, TSOP2-86 SK Hynix Inc IS42S32200E-6TL vs HY57V643220DT-6
Part Number Description Manufacturer Compare
MT48LC2M32B2P-7:GITTR Synchronous DRAM, 2MX32, 5.5ns, CMOS, PDSO86, 0.400 INCH, LEAD FREE, PLASTIC, TSOP-86 Micron Technology Inc IS42S32200E-6TL vs MT48LC2M32B2P-7:GITTR
K4S643232F-TC70 Synchronous DRAM, 2MX32, 5.5ns, CMOS, PDSO86, 0.400 X 0.875 INCH, 0.50 MM PITCH, TSOP2-86 Samsung Semiconductor IS42S32200E-6TL vs K4S643232F-TC70
IS42S32200B-6T Synchronous DRAM, 2MX32, 5.5ns, CMOS, PDSO86, 0.400 INCH, PLASTIC, TSOP2-86 Integrated Silicon Solution Inc IS42S32200E-6TL vs IS42S32200B-6T
W986432AH-7 Synchronous DRAM, 2MX32, 5.5ns, CMOS, PDSO86, 0.400 INCH, 0.50 MM PITCH, TSOP2-86 Winbond Electronics Corp IS42S32200E-6TL vs W986432AH-7
IS42S32200E-7TL-TR Synchronous DRAM, 2MX32, 5.5ns, CMOS, PDSO86, 0.400 INCH, LEAD FREE, TSOP2-86 Integrated Silicon Solution Inc IS42S32200E-6TL vs IS42S32200E-7TL-TR
KM432S2030CT-G6 Synchronous DRAM, 2MX32, 5.5ns, CMOS, PDSO86, 0.400 X 0.875 INCH, 0.50 MM PITCH, TSOP2-86 Samsung Semiconductor IS42S32200E-6TL vs KM432S2030CT-G6
K4S643232E-TL60 Synchronous DRAM, 2MX32, 5.5ns, CMOS, PDSO86, 0.400 X 0.875 INCH, 0.50 MM PITCH, TSOP2-86 Samsung Semiconductor IS42S32200E-6TL vs K4S643232E-TL60
UPD4564323G5-A70-9JH Synchronous DRAM, 2MX32, 5.5ns, MOS, PDSO86, 0.400 INCH, PLASTIC, TSOP2-86 Elpida Memory Inc IS42S32200E-6TL vs UPD4564323G5-A70-9JH
IS42S32200B-6TLI Synchronous DRAM, 2MX32, 5.5ns, CMOS, PDSO86, 0.400 INCH, LEAD FREE, PLASTIC, TSOP2-86 Integrated Silicon Solution Inc IS42S32200E-6TL vs IS42S32200B-6TLI
IS42S32200E-7TLI-TR Synchronous DRAM, 2MX32, 5.5ns, CMOS, PDSO86, 0.400 INCH, LEAD FREE, TSOP2-86 Integrated Silicon Solution Inc IS42S32200E-6TL vs IS42S32200E-7TLI-TR

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