Part Details for K4S643232H-UC600 by Samsung Semiconductor
Overview of K4S643232H-UC600 by Samsung Semiconductor
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- Number of FFF Equivalents: (8 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Part Details for K4S643232H-UC600
K4S643232H-UC600 CAD Models
K4S643232H-UC600 Part Data Attributes
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K4S643232H-UC600
Samsung Semiconductor
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Datasheet
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K4S643232H-UC600
Samsung Semiconductor
Synchronous DRAM, 2MX32, 5.5ns, CMOS, PDSO86, 0.400 INCH X 0.875 INCH, 0.50 MM PITCH, ROHS COMPLIANT, TSOP2-86
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| Rohs Code | Yes | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | SAMSUNG SEMICONDUCTOR INC | |
| Part Package Code | TSOP2 | |
| Package Description | TSSOP, TSSOP86,.46,20 | |
| Pin Count | 86 | |
| Reach Compliance Code | unknown | |
| ECCN Code | EAR99 | |
| HTS Code | 8542.32.00.02 | |
| Access Mode | FOUR BANK PAGE BURST | |
| Access Time-Max | 5.5 ns | |
| Additional Feature | AUTO/SELF REFRESH | |
| Clock Frequency-Max (fCLK) | 166 MHz | |
| I/O Type | COMMON | |
| Interleaved Burst Length | 1,2,4,8 | |
| JESD-30 Code | R-PDSO-G86 | |
| JESD-609 Code | e6 | |
| Length | 22.22 mm | |
| Memory Density | 67108864 bit | |
| Memory IC Type | SYNCHRONOUS DRAM | |
| Memory Width | 32 | |
| Moisture Sensitivity Level | 3 | |
| Number of Functions | 1 | |
| Number of Ports | 1 | |
| Number of Terminals | 86 | |
| Number of Words | 2097152 words | |
| Number of Words Code | 2000000 | |
| Operating Mode | SYNCHRONOUS | |
| Operating Temperature-Max | 70 °C | |
| Operating Temperature-Min | ||
| Organization | 2MX32 | |
| Output Characteristics | 3-STATE | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Code | TSSOP | |
| Package Equivalence Code | TSSOP86,.46,20 | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE, THIN PROFILE, SHRINK PITCH | |
| Peak Reflow Temperature (Cel) | 260 | |
| Qualification Status | Not Qualified | |
| Refresh Cycles | 4096 | |
| Seated Height-Max | 1.2 mm | |
| Self Refresh | YES | |
| Sequential Burst Length | 1,2,4,8,FP | |
| Standby Current-Max | 0.002 A | |
| Supply Current-Max | 0.15 mA | |
| Supply Voltage-Max (Vsup) | 3.6 V | |
| Supply Voltage-Min (Vsup) | 3 V | |
| Supply Voltage-Nom (Vsup) | 3.3 V | |
| Surface Mount | YES | |
| Technology | CMOS | |
| Temperature Grade | COMMERCIAL | |
| Terminal Finish | Tin/Bismuth (Sn/Bi) | |
| Terminal Form | GULL WING | |
| Terminal Pitch | 0.5 mm | |
| Terminal Position | DUAL | |
| Time@Peak Reflow Temperature-Max (s) | 40 | |
| Width | 10.16 mm |
Alternate Parts for K4S643232H-UC600
This table gives cross-reference parts and alternative options found for K4S643232H-UC600. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of K4S643232H-UC600, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| IS42S32200E-6TL | Synchronous DRAM, 2MX32, 5.5ns, CMOS, PDSO86, 0.400 INCH, LEAD FREE, TSOP2-86 | Integrated Silicon Solution Inc | K4S643232H-UC600 vs IS42S32200E-6TL |
| IS42S32200E-6TL-TR | Synchronous DRAM, 2MX32, 5.5ns, CMOS, PDSO86, 0.400 INCH, LEAD FREE, TSOP2-86 | Integrated Silicon Solution Inc | K4S643232H-UC600 vs IS42S32200E-6TL-TR |
| HY57V643220CT-6 | Synchronous DRAM, 2MX32, 5.5ns, CMOS, PDSO86, 0.400 X 0.875 INCH, 0.5 MM PITCH, TSOP2-86 | SK Hynix Inc | K4S643232H-UC600 vs HY57V643220CT-6 |
| K4S643232F-TC60 | Synchronous DRAM, 2MX32, 5.5ns, CMOS, PDSO86, 0.400 X 0.875 INCH, 0.50 MM PITCH, TSOP2-86 | Samsung Semiconductor | K4S643232H-UC600 vs K4S643232F-TC60 |
| HY57V643220DTP-6 | Synchronous DRAM, 2MX32, 5.5ns, CMOS, PDSO86, 0.400 X 0.875 INCH, 0.50 MM PITCH, LEAD FREE, TSOP2-86 | SK Hynix Inc | K4S643232H-UC600 vs HY57V643220DTP-6 |
| HY57V643220CT-6I | Synchronous DRAM, 2MX32, 5.5ns, CMOS, PDSO86, 0.400 X 0.875 INCH, TSOP2-86 | SK Hynix Inc | K4S643232H-UC600 vs HY57V643220CT-6I |
| K4S643232H-UC60T | Synchronous DRAM, 2MX32, 5.5ns, CMOS, PDSO86, 0.400 INCH X 0.875 INCH, 0.50 MM PITCH, ROHS COMPLIANT, TSOP2-86 | Samsung Semiconductor | K4S643232H-UC600 vs K4S643232H-UC60T |
| IS42S32200-6TL | Synchronous DRAM, 2MX32, 5.5ns, CMOS, PDSO86, 0.400 INCH, LEAD FREE, TSOP2-86 | Integrated Silicon Solution Inc | K4S643232H-UC600 vs IS42S32200-6TL |