Part Details for IXFH12N100Q by Littelfuse Inc
Overview of IXFH12N100Q by Littelfuse Inc
- Distributor Offerings: (0 listings)
- Number of FFF Equivalents: (0 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Applications
Industrial Automation
Motor control systems
Part Details for IXFH12N100Q
IXFH12N100Q CAD Models
IXFH12N100Q Part Data Attributes
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IXFH12N100Q
Littelfuse Inc
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Datasheet
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IXFH12N100Q
Littelfuse Inc
Power Field-Effect Transistor, 12A I(D), 1000V, 1.05ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AD, TO-247AD, 3 PIN
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| Rohs Code | Yes | |
| Part Life Cycle Code | Not Recommended | |
| Ihs Manufacturer | LITTELFUSE INC | |
| Package Description | FLANGE MOUNT, R-PSFM-T3 | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| Samacsys Manufacturer | LITTELFUSE | |
| Additional Feature | AVALANCHE RATED | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 1000 V | |
| Drain Current-Max (ID) | 12 A | |
| Drain-source On Resistance-Max | 1.05 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JEDEC-95 Code | TO-247AD | |
| JESD-30 Code | R-PSFM-T3 | |
| JESD-609 Code | e3 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | FLANGE MOUNT | |
| Peak Reflow Temperature (Cel) | 260 | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 300 W | |
| Pulsed Drain Current-Max (IDM) | 48 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | NO | |
| Terminal Finish | Matte Tin (Sn) | |
| Terminal Form | THROUGH-HOLE | |
| Terminal Position | SINGLE | |
| Time@Peak Reflow Temperature-Max (s) | 10 | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for IXFH12N100Q
This table gives cross-reference parts and alternative options found for IXFH12N100Q. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IXFH12N100Q, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| IXFH12N100Q | Power Field-Effect Transistor, 12A I(D), 1000V, 1.05ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AD, TO-247AD, 3 PIN | IXYS Corporation | IXFH12N100Q vs IXFH12N100Q |
| IXFT12N90Q | Power Field-Effect Transistor, 12A I(D), 900V, 0.9ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-268AA, TO-268, 3 PIN | Littelfuse Inc | IXFH12N100Q vs IXFT12N90Q |
| IXFH12N100QS | Power Field-Effect Transistor, 12A I(D), 1000V, 1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | IXYS Corporation | IXFH12N100Q vs IXFH12N100QS |
| IXFH12N90P | Power Field-Effect Transistor, 12A I(D), 900V, 0.9ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247, PLASTIC PACKAGE-3 | Littelfuse Inc | IXFH12N100Q vs IXFH12N90P |
| APT1001R1BFLC | 11A, 1000V, 1.1ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247, TO-247, 3 PIN | Microsemi Corporation | IXFH12N100Q vs APT1001R1BFLC |
| IXFT12N90Q | Power Field-Effect Transistor, 12A I(D), 900V, 0.9ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-268AA, TO-268, 3 PIN | IXYS Corporation | IXFH12N100Q vs IXFT12N90Q |
| IXFV12N90P | Power Field-Effect Transistor, 12A I(D), 900V, 0.9ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, PLASTIC, PLUS220, 3 PIN | IXYS Corporation | IXFH12N100Q vs IXFV12N90P |
| APT10086BVRG | Power Field-Effect Transistor, 13A I(D), 1000V, 0.86ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247 | Microchip Technology Inc | IXFH12N100Q vs APT10086BVRG |
| APT1001RBLC | Power Field-Effect Transistor, 11A I(D), 1000V, 1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247 | Advanced Power Technology | IXFH12N100Q vs APT1001RBLC |
| APT1001RBVRG | Power Field-Effect Transistor, 11A I(D), 1000V, 1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247 | Microchip Technology Inc | IXFH12N100Q vs APT1001RBVRG |